Electrical Characterization of Ion Imiplanted, Thermally Annealed TiN Films Acting as Diffusion Barriers on Shallow Junction Silicon Devices

1985 ◽  
Vol 45 ◽  
Author(s):  
A. Armigliato ◽  
M. Finetti ◽  
E. Gabilli ◽  
S. Guerri ◽  
P. Ostoja ◽  
...  
Keyword(s):  
Contact Resistance ◽  
Contact Area ◽  
Electrical Characterization ◽  
Diffusion Barriers ◽  
Contact Structures ◽  
Thermal Treatments ◽  
Tin Films ◽  
Shallow Junction ◽  
Silicon Devices

ABSTRACTTiN films prepared by implantation onto evaporated Ti layers are tested as diffusion barriers in contact with a thick Al overlayer. Both the TiN/Al and TiSi2/TiN/Al contact structures are evaluated, after thermal treatments up to 600 C, on shallow junction diodes and four terminal resistor test patterns for contact resistance measurements. It is shown that, upon annealing at 600 C, the TiSi2/TiN/Al contact system still exhibits excellent electrical performances. The degradation is found to depend on TiSi2 thickness and contact area.

Electrical and Physical Characterization of Tin Diffusion Barrier for Sub-Micron Contact Structure

1993 ◽  
Vol 303 ◽  
Author(s):  
G.D. Yao ◽  
Y.C. Lu ◽  
S. Prasad ◽  
W. Hata ◽  
F.S. Chen ◽  
...  
Keyword(s):  
Electrical Characterization ◽  
Contact Structures ◽  
Process Conditions ◽  
Tin Films ◽  
High Resolution Tem ◽  
Diffraction Patterns ◽  
Al Metallization ◽  
Interface Structures ◽  
Plug Formation

ABSTRACTTiN diffusion barriers have been widely used in submicron contact structures, due to its good adhesion (to SiO2, W, Al and Si) properties, low diffusivity (for Si, W and Al) and compatibility with TiSi2 processing. The purpose of this paper is to present the results of physical and electrical characterization of contact structures with a TiN barrier and W plugs. Two different barrier metal processes were compared, Viz: sputtered Ti followed by post RTN and Ti/TiN films followed by post RTA in the range of 600° to 800°C. The devices were thermal stressed at 450°C for 7 hrs after W plug formation and Al metallization. Ti/TiN films with post RTA are generally superior barrier layers than Ti films with post RTA as shown by electrical characterization of contact resistance and barrier integrity. The relationship between electrical properties and microstructure for the two different barrier structures is discussed. W/TiN and TiN/TiSi2 interface structures were characterized using high resolution TEM. TiSi2 was found to be epitaxially grown during RTA, under certain process conditions. The crystal structure of TiSi2 was determined from electron diffraction patterns.

scholarly journals Characterization of the Resistance and Force of a Carbon Nanotube/Metal Side Contact by Nanomanipulation

Scanning ◽  
2017 ◽  
Vol 2017 ◽  
pp. 1-11 ◽  
Author(s):  
Ning Yu ◽  
Masahiro Nakajima ◽  
Qing Shi ◽  
Zhan Yang ◽  
Huaping Wang ◽  
...  
Keyword(s):  
Contact Resistance ◽  
Contact Force ◽  
Contact Area ◽  
Field Effect Transistors ◽  
Influence Factors ◽  
Contact Length ◽  
Before And After ◽  
Negative Exponential ◽  
Good Agreement

A high contact resistance restricts the application of carbon nanotubes (CNTs) in fabrication of field-effect transistors (FETs). Thus, it is important to decrease the contact resistance and investigate the critical influence factors such as the contact length and contact force. This study uses nanomanipulation to characterize both the resistance and the force at a CNT/Au side-contact interface inside a scanning electron microscopy (SEM). Two-terminal CNT manipulation methods, and models for calculating the resistance and force at contact area, are proposed to guide the measurement experiments of a total resistance and a cantilever’s elastic deformation. The experimental results suggest that the contact resistance of CNT/Au interface is large (189.5 kΩ) when the van der Waals force (282.1 nN) dominates the contact force at the interface. Electron-beam-induced deposition (EBID) is then carried out to decrease the contact resistance. After depositing seven EBID points, the resistance is decreased to 7.5 kΩ, and the force increases to 1339.8 nN at least. The resistance and force at the contact area where CNT was fixed exhibit a negative exponential correlation before and after EBID. The good agreement of this correlation with previous reports validates the proposed robotic system and methods for characterizing the contact resistance and force.

Electrical characterization of process induced effects on non-silicon devices

2018 ◽  
Author(s):  
Chadwin D. Young ◽  
Pavel Bolshakov ◽  
Rodolfo A. Rodriguez-Davila ◽  
Peng Zhao ◽  
Ava Khosravi ◽  
...  
Keyword(s):  
Electrical Characterization ◽  
Silicon Devices

Synthesis of Nanosize Ceria by a Combustion Process and Electrical Characterization of HeteroFoaM Porous Ceria Electrodes

2011 ◽  
Author(s):  
J. Wright ◽  
A. V. Virkar
Keyword(s):  
Oxygen Sensor ◽  
Electronic Conductivity ◽  
Combustion Process ◽  
Electrical Characterization ◽  
Electronic Conduction ◽  
Thermal Treatments ◽  
Powder Samples ◽  
Uniform Composition ◽  
Mixed Ionic Electronic Conductivity

Nanosize powders of Sm2O3-doped CeO2 (SDC) containing various dopants (Pr, Rh, Re) were synthesized using respective nitrates and D-gluconic acid (DGA) by a combustion process. The resulting powders were extremely fine (nanosize) and of uniform composition. Porous samples with open porosity were fabricated by sintering. Electrical conductivity was measured by a four probe DC technique over a wide pO2 range and a temperature range between 200°C and 800°C. The pO2 was measured using an oxygen sensor. Samples of SDC and SDC with Pr doping exhibited significant electronic conduction in reducing atmospheres above 400°C. Thus, these materials are suitable candidates for SOFC anodes above 400°C. Sintered and powder samples were subjected to various thermal treatments in several atmospheres (oxidizing to reducing) and were characterized by XRD, SEM, and XPS. The purpose of adding the dopants Pr, Rh and Re was to create mixed ionic electronic conductivity in reducing atmospheres at low (<300°C) temperatures. Such materials are potential candidates as SOFC anodes at temperatures possibly lower than 500°C.

In-situ electrical characterization of ultrathin TiN films grown by reactive dc magnetron sputtering on SiO2

2009 ◽  
Vol 517 (24) ◽  
pp. 6731-6736 ◽  
Author(s):  
A.S. Ingason ◽  
F. Magnus ◽  
J.S. Agustsson ◽  
S. Olafsson ◽  
J.T. Gudmundsson
Keyword(s):  
Magnetron Sputtering ◽  
Electrical Characterization ◽  
Dc Magnetron Sputtering ◽  
Tin Films

scholarly journals Impact of contact resistance on the electrical properties of MoS2 transistors at practical operating temperatures

2017 ◽  
Vol 8 ◽  
pp. 254-263 ◽  
Author(s):  
Filippo Giannazzo ◽  
Gabriele Fisichella ◽  
Aurora Piazza ◽  
Salvatore Di Franco ◽  
Giuseppe Greco ◽  
...  
Keyword(s):  
Contact Resistance ◽  
Temperature Dependence ◽  
Schottky Barrier ◽  
Field Effect ◽  
Electrical Characterization ◽  
Operating Conditions ◽  
Limiting Factors ◽  
Molybdenum Disulphide ◽  
Heating Effects

Molybdenum disulphide (MoS2) is currently regarded as a promising material for the next generation of electronic and optoelectronic devices. However, several issues need to be addressed to fully exploit its potential for field effect transistor (FET) applications. In this context, the contact resistance, R C, associated with the Schottky barrier between source/drain metals and MoS2 currently represents one of the main limiting factors for suitable device performance. Furthermore, to gain a deeper understanding of MoS2 FETs under practical operating conditions, it is necessary to investigate the temperature dependence of the main electrical parameters, such as the field effect mobility (μ) and the threshold voltage (V th). This paper reports a detailed electrical characterization of back-gated multilayer MoS2 transistors with Ni source/drain contacts at temperatures from T = 298 to 373 K, i.e., the expected range for transistor operation in circuits/systems, considering heating effects due to inefficient power dissipation. From the analysis of the transfer characteristics (I D−V G) in the subthreshold regime, the Schottky barrier height (ΦB ≈ 0.18 eV) associated with the Ni/MoS2 contact was evaluated. The resulting contact resistance in the on-state (electron accumulation in the channel) was also determined and it was found to increase with T as R C proportional to T 3.1. The contribution of R C to the extraction of μ and V th was evaluated, showing a more than 10% underestimation of μ when the effect of R C is neglected, whereas the effect on V th is less significant. The temperature dependence of μ and V th was also investigated. A decrease of μ proportional to 1/T α with α = 1.4 ± 0.3 was found, indicating scattering by optical phonons as the main limiting mechanism for mobility above room temperature. The value of V th showed a large negative shift (about 6 V) increasing the temperature from 298 to 373 K, which was explained in terms of electron trapping at MoS2/SiO2 interface states.

Electrical characterization of Cu-diffusion barriers using Schottky diodes

1997 ◽  
Vol 33 (1-4) ◽  
pp. 301-307 ◽  
Author(s):  
C. Ahrens ◽  
G. Friese ◽  
R. Ferretti ◽  
B. Schwierzi ◽  
W. Hasse
Keyword(s):  
Schottky Diodes ◽  
Electrical Characterization ◽  
Diffusion Barriers

Growth and in-situ electrical characterization of ultrathin epitaxial TiN films on MgO

2011 ◽  
Vol 519 (18) ◽  
pp. 5861-5867 ◽  
Author(s):  
F. Magnus ◽  
A.S. Ingason ◽  
S. Olafsson ◽  
J.T. Gudmundsson
Keyword(s):  
Electrical Characterization ◽  
Tin Films

Pld Epitaxial Tin Contacts To 6H-Sic And Gan

1997 ◽  
Vol 483 ◽  
Author(s):  
V. Talyansky ◽  
R. D. Vispute ◽  
S. N. Andronescu ◽  
A. A. Iliadis ◽  
K. A. Jones ◽  
...  
Keyword(s):  
Thin Films ◽  
Contact Resistance ◽  
Growth Temperature ◽  
Electrical Characterization ◽  
Low Resistance ◽  
Tin Thin Films

AbstractWe have investigated the influence of TiN growth temperature on the contact resistance in TiN/SiC and TiN/GaN heterostructures. Epitaxial TiN layers grown at temperatures above 600°C formed low resistance contacts to n-type 6H-SiC and GaN of 1.1× 10−3 Ωcm2 and 7.9 ×10−5 Ωcm2, respectively. Structural and electrical characterization of TiN thin films is discussed.

Microstructural Characterization of Au-Ge-Ni based ohmic contacts to GaAs/AlGaAs modfet device

1987 ◽  
Vol 45 ◽  
pp. 326-327
Author(s):  
A.K. Rai ◽  
A.K. Petford-Long ◽  
A. Ezis ◽  
D.W. Langer
Keyword(s):  
Contact Resistance ◽  
Ohmic Contact ◽  
Ohmic Contacts ◽  
Microstructural Characterization ◽  
Almost Everywhere ◽  
Spacer Layer ◽  
Good Contact ◽  
The Relationship ◽  
Lower Contact

Considerable amount of work has been done in studying the relationship between the contact resistance and the microstructure of the Au-Ge-Ni based ohmic contacts to n-GaAs. It has been found that the lower contact resistivity is due to the presence of Ge rich and Au free regions (good contact area) in contact with GaAs. Thus in order to obtain an ohmic contact with lower contact resistance one should obtain a uniformly alloyed region of good contact areas almost everywhere. This can possibly be accomplished by utilizing various alloying schemes. In this work microstructural characterization, employing TEM techniques, of the sequentially deposited Au-Ge-Ni based ohmic contact to the MODFET device is presented.The substrate used in the present work consists of 1 μm thick buffer layer of GaAs grown on a semi-insulating GaAs substrate followed by a 25 Å spacer layer of undoped AlGaAs.

Sign in / Sign up

Export Citation Format

Share Document