Pld Epitaxial Tin Contacts To 6H-Sic And Gan

1997 ◽  
Vol 483 ◽  
Author(s):  
V. Talyansky ◽  
R. D. Vispute ◽  
S. N. Andronescu ◽  
A. A. Iliadis ◽  
K. A. Jones ◽  
...  
Keyword(s):  
Thin Films ◽  
Contact Resistance ◽  
Growth Temperature ◽  
Electrical Characterization ◽  
Low Resistance ◽  
Tin Thin Films

AbstractWe have investigated the influence of TiN growth temperature on the contact resistance in TiN/SiC and TiN/GaN heterostructures. Epitaxial TiN layers grown at temperatures above 600°C formed low resistance contacts to n-type 6H-SiC and GaN of 1.1× 10−3 Ωcm2 and 7.9 ×10−5 Ωcm2, respectively. Structural and electrical characterization of TiN thin films is discussed.

Electrical characterization of rf sputtered TiN thin films on III–V semiconductors

1992 ◽  
Vol 70 (10-11) ◽  
pp. 1076-1081 ◽  
Author(s):  
Zhengda Pang ◽  
Mohamed Boumerzoug ◽  
Roman V. Kruzelecky ◽  
Peter Mascher ◽  
John G. Simmons ◽  
...  
Keyword(s):  
Thin Films ◽  
Barrier Height ◽  
Ideality Factor ◽  
Elevated Temperatures ◽  
Electrical Characterization ◽  
Optical Emission ◽  
Tin Thin Films ◽  
Optimized Conditions

TiN thin films were deposited on GaAs and InP by rf reactive sputtering. Samples of TiN/GaAs and TiN/InP then were investigated by a multitude of techniques to evaluate the morphology of as-deposited and post-annealed films and to investigate contact properties such as barrier height, carrier concentration, and ideality factor. Optical emission spectroscopy was used as an in situ process control to optimize certain film properties. The results show that the deposition conditions, such as total pressure, N2/Ar flow ratio, and substrate temperature, have an important effect on the properties of the resulting films. Under optimized conditions, near-stoichiometric TiN films with resistivities as low as 20 μΩ cm were obtained. Rapid thermal annealing (RTA) of TiN/GaAs enhanced the barrier height and improved the ideality factor of these diodes. These systems were stable after RTA at temperatures as high as 800 °C. As-deposited TiN on InP, in contrast, typically exhibits nonrectifying behaviour. The characteristics become more ohmic after RTA at elevated temperatures.

Vapor Deposition Polymerization and Electrical Characterization of TPD Thin Films

2011 ◽  
Vol E94-C (2) ◽  
pp. 157-163 ◽  
Author(s):  
Masakazu MUROYAMA ◽  
Ayako TAJIRI ◽  
Kyoko ICHIDA ◽  
Seiji YOKOKURA ◽  
Kuniaki TANAKA ◽  
...  
Keyword(s):  
Thin Films ◽  
Vapor Deposition ◽  
Electrical Characterization

Structural and electrical characterization of AIN thin films obtained by nitridation of Al/Si substrate

1999 ◽  
Vol 28 (3) ◽  
pp. 225-227 ◽  
Author(s):  
Jipo Huang ◽  
Lianwei Wang ◽  
Qinwo Shen ◽  
Chenglu Lin ◽  
Mikael Östling
Keyword(s):  
Thin Films ◽  
Electrical Characterization ◽  
Si Substrate
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