Electrical and Physical Characterization of Tin Diffusion Barrier for Sub-Micron Contact Structure

1993 ◽  
Vol 303 ◽  
Author(s):  
G.D. Yao ◽  
Y.C. Lu ◽  
S. Prasad ◽  
W. Hata ◽  
F.S. Chen ◽  
...  
Keyword(s):  
Electrical Characterization ◽  
Contact Structures ◽  
Process Conditions ◽  
Tin Films ◽  
High Resolution Tem ◽  
Diffraction Patterns ◽  
Al Metallization ◽  
Interface Structures ◽  
Plug Formation

ABSTRACTTiN diffusion barriers have been widely used in submicron contact structures, due to its good adhesion (to SiO2, W, Al and Si) properties, low diffusivity (for Si, W and Al) and compatibility with TiSi2 processing. The purpose of this paper is to present the results of physical and electrical characterization of contact structures with a TiN barrier and W plugs. Two different barrier metal processes were compared, Viz: sputtered Ti followed by post RTN and Ti/TiN films followed by post RTA in the range of 600° to 800°C. The devices were thermal stressed at 450°C for 7 hrs after W plug formation and Al metallization. Ti/TiN films with post RTA are generally superior barrier layers than Ti films with post RTA as shown by electrical characterization of contact resistance and barrier integrity. The relationship between electrical properties and microstructure for the two different barrier structures is discussed. W/TiN and TiN/TiSi2 interface structures were characterized using high resolution TEM. TiSi2 was found to be epitaxially grown during RTA, under certain process conditions. The crystal structure of TiSi2 was determined from electron diffraction patterns.

Electrical Characterization of Ion Imiplanted, Thermally Annealed TiN Films Acting as Diffusion Barriers on Shallow Junction Silicon Devices

1985 ◽  
Vol 45 ◽  
Author(s):  
A. Armigliato ◽  
M. Finetti ◽  
E. Gabilli ◽  
S. Guerri ◽  
P. Ostoja ◽  
...  
Keyword(s):  
Contact Resistance ◽  
Contact Area ◽  
Electrical Characterization ◽  
Diffusion Barriers ◽  
Contact Structures ◽  
Thermal Treatments ◽  
Tin Films ◽  
Shallow Junction ◽  
Silicon Devices

ABSTRACTTiN films prepared by implantation onto evaporated Ti layers are tested as diffusion barriers in contact with a thick Al overlayer. Both the TiN/Al and TiSi2/TiN/Al contact structures are evaluated, after thermal treatments up to 600 C, on shallow junction diodes and four terminal resistor test patterns for contact resistance measurements. It is shown that, upon annealing at 600 C, the TiSi2/TiN/Al contact system still exhibits excellent electrical performances. The degradation is found to depend on TiSi2 thickness and contact area.

Characterization of the Ni/NiO, Interface Region in Oxidized High Purity Nickel by Transmission Electron Microscopy

1985 ◽  
Vol 48 ◽  
Author(s):  
Howard T. Sawhill ◽  
Linn W. Hobbs
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
High Purity ◽  
Structure Factor ◽  
Dihedral Angles ◽  
Interfacial Energies ◽  
Transmission Electron ◽  
Diffraction Patterns ◽  
Interface Structures

ABSTRACTNi/NiO interface structures were investigated using TEM, and the observed structures were compared with current heterophase interface models. Relative magnitudes of Ni/NiO interfacial energies were obtained from measurements of dihedral angles at triple grain junctions between Ni and NiO grains. Extra reflections in diffraction patterns from oxide grains adjacent to the Ni/NiO interface were compared with kinematical structure factor calculations for several proposed structures.

scholarly journals Preparation, Characterization, and Evaluation of Humidity-Dependent Electrical Properties of Undoped and Niobium Oxide-Doped TiO2 : WO3 Mixed Powders

2017 ◽  
Vol 2017 ◽  
pp. 1-9 ◽  
Author(s):  
Pedro M. Faia ◽  
Juliano Libardi ◽  
Itamar Barbosa ◽  
Evando S. Araújo ◽  
Helinando P. de Oliveira
Keyword(s):  
Electrical Properties ◽  
Electrical Characterization ◽  
Ternary Systems ◽  
Ceramic Materials ◽  
Bet Surface Area ◽  
X Ray Diffraction ◽  
Order Of Magnitude ◽  
Diffraction Patterns ◽  
Pellet Form

The study of selective metal oxide-based binary/ternary systems has received increasing interest in recent years due to the possibility of producing efficient new ceramic materials for relative humidity (RH) detection, given the superior properties of the mixed compounds in comparison with pristine ones. The aim of this work was focused on preparation and characterization of non-doped and Nb2O5-doped TiO2 : WO3 pair (in the pellet form) and evaluation of corresponding humidity-dependent electrical properties. The microstructure of the samples was analyzed from scanning electron microscopy, X-ray diffraction patterns, Raman spectra, BET surface area analysis, and porosimetry. The electrical characterization was obtained from impedance spectroscopy (100 Hz to 40 MHz) in the 10–100% RH range. The results showed that adequate doping levels of Nb2O5 introduce important advantages due to the atomic substitution of Ti by Nb atoms in highly doped structures with different levels of porosity and grain sizes. These aspects introduced a key role in the excursion (one order of magnitude) in the bulk resistance and grain boundary resistance, which characterizes these composite ceramics as a promising platform for RH identification.

TEM Characterization of Planar Defects in A Massively Transformed TiAl Alloy

1996 ◽  
Vol 460 ◽  
Author(s):  
X. D. Zhang ◽  
J. M. K. Wiezorek ◽  
M. J. Kaufman ◽  
M. H. Loretto ◽  
H. L. Fraser
Keyword(s):  
Tial Alloy ◽  
Al Alloy ◽  
Planar Defects ◽  
Transmission Electron ◽  
Domain Boundaries ◽  
Different Types ◽  
High Resolution Tem ◽  
Diffraction Patterns ◽  
Matrix Domains

ABSTRACTThe microstructure of a massively transformed Ti-49at.%Al alloy has been studied by conventional transmission electron microscopy (CTEM) and high resolution TEM (HREM). A high density of planar defects, namely complex anti-phase domain boundaries (CAPDB) and thermal micro-twins (TMT) have been observed. CTEM images and diffraction patterns showed that two anti-phase related γ-matrix domains were generally separated by a thin layer of a 90°-domain, for which the c-axis is rotated 90° over a common cube axis with respect to those of the γ-matrix domains. HREM confirmed the presence of two crystallographically different types of 90°-do-mains being associated with the CAPDB. Furthermore, interactions between the CAPDB and TMT have been observed. Local faceting of the generally wavy, non-crystallographic CAPDB parallel to the {111}-twinning planes occurred due to interaction with the TMT. The relaxation of the CAPDB onto {111} required diffusion which is proposed to be enhanced locally in the presence of the dislocations associated with the formation of TMT during the massive transformation.

In-situ electrical characterization of ultrathin TiN films grown by reactive dc magnetron sputtering on SiO2

2009 ◽  
Vol 517 (24) ◽  
pp. 6731-6736 ◽  
Author(s):  
A.S. Ingason ◽  
F. Magnus ◽  
J.S. Agustsson ◽  
S. Olafsson ◽  
J.T. Gudmundsson
Keyword(s):  
Magnetron Sputtering ◽  
Electrical Characterization ◽  
Dc Magnetron Sputtering ◽  
Tin Films

Growth and in-situ electrical characterization of ultrathin epitaxial TiN films on MgO

2011 ◽  
Vol 519 (18) ◽  
pp. 5861-5867 ◽  
Author(s):  
F. Magnus ◽  
A.S. Ingason ◽  
S. Olafsson ◽  
J.T. Gudmundsson
Keyword(s):  
Electrical Characterization ◽  
Tin Films

Skeletal elements of crinoid echinoderms: High-resolution structural and microanalytical results

1983 ◽  
Vol 41 ◽  
pp. 194-195
Author(s):  
D. F. Blake ◽  
L. F. Allard ◽  
D. R. Peacor
Keyword(s):  
High Resolution ◽  
Marine Invertebrates ◽  
Sea Urchins ◽  
Structural Features ◽  
Sea Stars ◽  
High Resolution Tem ◽  
Relationship Of ◽  
The Relationship ◽  
Insight Into

Echinodermata is a phylum of marine invertebrates which has been extant since Cambrian time (c.a. 500 m.y. before the present). Modern examples of echinoderms include sea urchins, sea stars, and sea lilies (crinoids). The endoskeletons of echinoderms are composed of plates or ossicles (Fig. 1) which are with few exceptions, porous, single crystals of high-magnesian calcite. Despite their single crystal nature, fracture surfaces do not exhibit the near-perfect {10.4} cleavage characteristic of inorganic calcite. This paradoxical mix of biogenic and inorganic features has prompted much recent work on echinoderm skeletal crystallography. Furthermore, fossil echinoderm hard parts comprise a volumetrically significant portion of some marine limestones sequences. The ultrastructural and microchemical characterization of modern skeletal material should lend insight into: 1). The nature of the biogenic processes involved, for example, the relationship of Mg heterogeneity to morphological and structural features in modern echinoderm material, and 2). The nature of the diagenetic changes undergone by their ancient, fossilized counterparts. In this study, high resolution TEM (HRTEM), high voltage TEM (HVTEM), and STEM microanalysis are used to characterize tha ultrastructural and microchemical composition of skeletal elements of the modern crinoid Neocrinus blakei.

The coprecipitation of Cr3P and Cr in Cu

1988 ◽  
Vol 46 ◽  
pp. 764-765
Author(s):  
M.J. Witcomb ◽  
U. Dahmen ◽  
K.H. Westmacott
Keyword(s):  
Orientation Relationship ◽  
Interface Structure ◽  
Model System ◽  
Relative Orientation ◽  
Age Hardening ◽  
Precipitation Behavior ◽  
Solution Treated ◽  
Small Needle ◽  
Diffraction Patterns ◽  
Interface Structures

Cu-Cr age-hardening alloys are of interest as a model system for the investigation of fcc/bcc interface structures. Several past studies have investigated the morphology and interface structure of Cr precipitates in a Cu matrix (1-3) and good success has been achieved in understanding the crystallography and strain contrast of small needle-shaped precipitates. The present study investigates the effect of small amounts of phosphorous on the precipitation behavior of Cu-Cr alloys.The same Cu-0.3% Cr alloy as was used in earlier work was rolled to a thickness of 150 μm, solution treated in vacuum at 1050°C for 1h followed by quenching and annealing for various times at 820 and 863°C.Two laths and their corresponding diffraction patterns in an alloy aged 2h at 820°C are shown in correct relative orientation in Fig. 1. To within the limit of accuracy of the diffraction patterns the orientation relationship was that of Kurdjumov-Sachs (KS), i.e. parallel close-packed planes and directions.

Electron microscopy study of reactively sputter-deposited Ti/N films on silicon

1992 ◽  
Vol 50 (2) ◽  
pp. 1362-1363
Author(s):  
V. C. Kannan ◽  
A. K. Singh ◽  
R. B. Irwin ◽  
S. Chittipeddi ◽  
F. D. Nkansah ◽  
...  
Keyword(s):  
Integrated Circuits ◽  
Large Scale ◽  
Hexagonal Phase ◽  
Microscopy Study ◽  
Electron Microscopy Study ◽  
Process Conditions ◽  
Tin Films ◽  
Wide Range ◽  
Fcc Phase ◽  
Circuits Vlsi

Titanium nitride (TiN) films have historically been used as diffusion barrier between silicon and aluminum, as an adhesion layer for tungsten deposition and as an interconnect material etc. Recently, the role of TiN films as contact barriers in very large scale silicon integrated circuits (VLSI) has been extensively studied. TiN films have resistivities on the order of 20μ Ω-cm which is much lower than that of titanium (nearly 66μ Ω-cm). Deposited TiN films show resistivities which vary from 20 to 100μ Ω-cm depending upon the type of deposition and process conditions. TiNx is known to have a NaCl type crystal structure for a wide range of compositions. Change in color from metallic luster to gold reflects the stabilization of the TiNx (FCC) phase over the close packed Ti(N) hexagonal phase. It was found that TiN (1:1) ideal composition with the FCC (NaCl-type) structure gives the best electrical property.

Interface structures in polycrystalline ceramic materials

1986 ◽  
Vol 44 ◽  
pp. 468-471
Author(s):  
K. J. Morrissey
Keyword(s):  
Electron Microscopy ◽  
Analytical Electron Microscopy ◽  
Physical And Mechanical Properties ◽  
High Resolution Electron Microscopy ◽  
Ceramic Materials ◽  
Polycrystalline Materials ◽  
Transmission Electron ◽  
Resolution Electron ◽  
Interface Structures

Grain boundaries and interfaces play an important role in determining both physical and mechanical properties of polycrystalline materials. To understand how the structure of interfaces can be controlled to optimize properties, it is necessary to understand and be able to predict their crystal chemistry. Transmission electron microscopy (TEM), analytical electron microscopy (AEM,), and high resolution electron microscopy (HREM) are essential tools for the characterization of the different types of interfaces which exist in ceramic systems. The purpose of this paper is to illustrate some specific areas in which understanding interface structure is important. Interfaces in sintered bodies, materials produced through phase transformation and electronic packaging are discussed.

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