Tem and X-Ray Investigation of Single Crystal-Like Zirconia Films Fabricated by Dual Ion Beam Deposition

1995 ◽  
Vol 396 ◽  
Author(s):  
Kevin G. Ressler ◽  
Neville Sonnenberg ◽  
Michael J. Cima
Keyword(s):  
Single Crystal ◽  
Quartz Substrate ◽  
Ion Beam ◽  
Film Plane ◽  
Film Structure ◽  
Cross Sectional ◽  
X Ray ◽  
Ion Beam Deposition ◽  
Amorphous Quartz ◽  
Beam Deposition

AbstractSingle crystal-like yttria-stabilized zirconia (YSZ) thin films have been deposited on amorphous quartz, polycrystalline zirconia, single crystal Si, and Hastelloy substrates using dual ion beam deposition (IBAD). These films are highly crystallographically aligned both normal to and within the film plane. The films are deposited at low substrate temperatures (<200°C), and the film orientation is substrate independent. θ-2θ X-ray diffraction, X-ray rocking curves, X-ray pole figures and X-ray phi scans are used to evaluate the film structure. High resolution cross-sectional TEM is used to examine the evolution of crystallographic film alignment on an amorphous quartz substrate. The data suggest that the evolution of biaxial alignment is nucleation controlled under these conditions.

Structure, Optical and Electrical Properties of Pulsed Laser Deposited and Ion Beam Deposited CNx Films

1997 ◽  
Vol 498 ◽  
Author(s):  
K. F. Chan ◽  
X.-A. Zhao ◽  
C. W. Ong
Keyword(s):  
Electrical Conductivity ◽  
Electrical Properties ◽  
Ion Beam ◽  
Pulsed Laser ◽  
Film Structure ◽  
Laser Deposition ◽  
Optical And Electrical Properties ◽  
Ion Beam Deposition ◽  
Valence Bands ◽  
Beam Deposition

ABSTRACTCNx films were deposited using pulsed laser deposition (PLD) and ion beam deposition (IBD). The PLD films deposited at substrate temperature Ts = 25°C and high N2 partial pressure have the highest N content (fN) and polymerlike structure, accompanied by large band gap (Eg) and low electrical conductivity (σroom). The rise in Ts lowers fN and induces graphitization of the film structure, so Eg reduces and σroom increases. IBD (with and without N2+ assist) films are graphitic. Higher Ts further enhances the graphitization of the film structure, such that the conduction and valence bands overlap, and σroom approaches to that of graphite. No evidence was found to show successful formation of the hypothetical β-C3N4 phase in the films.

Investigations of Low-Temperature Epitaxy, Ion Damage, and Reactive-Ion Cleaning Utilizing Ion Beam Deposition

1986 ◽  
Vol 74 ◽  
Author(s):  
B. R. Appleton ◽  
R. A. Zuhr ◽  
T. S. Noggle ◽  
N. Herbots ◽  
S. J. Pennycook
Keyword(s):  
Low Temperature ◽  
Ion Beam ◽  
Low Energy ◽  
Ion Scattering ◽  
Cross Sectional ◽  
Ion Beam Deposition ◽  
Epitaxial Deposition ◽  
Ion Damage ◽  
Low Temperature Epitaxy ◽  
Beam Deposition

AbstractThe technique of ion beam deposition (IBD) is utilized to investigate low-energy, ion-induced damage on Si and Ge; to study reactive ion cleaning of Si and Ge; to fabricate amorphous isotopic heterostructures; and to fabricate and study the low-temperature epitaxial deposition of 74Ge on Ge(100), 30Si on Si(100), and 74Ge on Si(100). The techniques of ion scattering/channeling and cross-sectional TEM are combined to characterize the deposits.

Ion Beam Deposition of Epitaxial Silicon Films

1997 ◽  
Vol 485 ◽  
Author(s):  
H. R. Khan ◽  
H. Frey
Keyword(s):  
Ion Beam ◽  
Silicon Films ◽  
Epitaxial Silicon ◽  
X Ray Diffraction ◽  
Ion Energy ◽  
X Ray ◽  
Ion Beam Deposition ◽  
Si Films ◽  
Silane Plasma ◽  
Beam Deposition

AbstractSilicon films of thicknesses (100 – 800 nm) are deposited on Si[111] substrate at 490°C using Si+ ions of energies (20 – 70 eV) from Silane plasma. The structure of the films depends on the energy of Si+ ions and the film grows epitaxially for ion energy <20 eV. Si films are analyzed by X-ray diffraction technique.

The Effects of Ion Energy on Carbon and Tungsten Films Fabricated by Direct Ion Beam Deposition and Ion Beam Sputtering Deposition

1991 ◽  
Vol 223 ◽  
Author(s):  
I. Kataoka ◽  
K. Ito ◽  
N. Hoshi ◽  
T. Yonemitsu ◽  
K. Etoh ◽  
...  
Keyword(s):  
Surface Roughness ◽  
Ion Beam ◽  
Amorphous Structure ◽  
Film Structure ◽  
Ion Beam Sputtering ◽  
Ion Energy ◽  
Sputtering Deposition ◽  
Ion Beam Deposition ◽  
Beam Sputtering ◽  
Beam Deposition

ABSTRACTThe x-ray reflectivity and surface morphology of C/W multilayers fabricated by ion beam sputtering (IBS) method was evaluated. Also the surface roughness and amorphous structure of C and W films fabricated by direct ion beam deposition (DIBD) method were evaluated as a function of ion energy. The reflectivity was measured by the C-K line (4.47nm) and STM was used for surface roughness measurement and root-mean-square value of correlation function of the RHEED pattern was used for evaluation of amorphous structure. The reflectivity of C/W multilayer was about 69% of the theoretical one, and micro-columnar structures were observed from STM images. The film structure and surface roughness of DIBD film were changed with the depositing ion energy. The surface roughness of films becomes smaller as the depositing energy becomes higher in the energy range from 20 to 140eV.

Ion Beam Deposition of Calcium Hydroxyapatite

1987 ◽  
Vol 110 ◽  
Author(s):  
B. L. Barthell ◽  
T. A. Archuleta ◽  
Ram Kossowsky
Keyword(s):  
Electron Microscopy ◽  
Ion Beam ◽  
Calcium Hydroxyapatite ◽  
X Ray Diffraction ◽  
X Ray ◽  
Adhesion Testing ◽  
Ion Beam Deposition ◽  
Argon Ion ◽  
Scanning Electron ◽  
Beam Deposition

AbstractCalcium hydroxyapatite has been sputtered on glass and Ti-6Al-4V substrates using a 1.5-kV argon ion beam. The films have been examined by x-ray diffraction analysis, energy dispersive spectroscopy, scanning electron microscopy, and adhesion testing. Results of this experimentation are presented.

scholarly journals Ion Beam Synthesis of Buried Single Crystal Erbium Silicide

1990 ◽  
Vol 201 ◽  
Author(s):  
A. Golanski ◽  
R. Feenstra ◽  
M. D. Galloway ◽  
J. L. Park ◽  
S. J. Pennycook ◽  
...  
Keyword(s):  
Single Crystal ◽  
Ion Beam ◽  
Annealing Process ◽  
X Ray Diffraction ◽  
Cross Sectional ◽  
Single Crystalline ◽  
X Ray ◽  
Buried Layer ◽  
High Doses

AbstractHigh doses (1016–1017/cm2) of 170 keV Er+ were implanted into single-crystal 〈111〉Si at implantation temperatures between 350°C and 520°C. Annealing at 800°C in vacuum following the implant, the growth and coalescence of ErSi2 precipitates leads to a buried single crystalline ErSi2 layer. This has been studied using Rutherford backscattering/channeling, X-ray diffraction, cross-sectional TEM and resistance versus temperature measurements. Samples implanted at 520°C using an Er dose of 7 × 1016/cm2 and thermally annealed were subsequently used as seeds for the mesocpitaxial growth of the buried layer during a second implantation and annealing process. Growth occurs meso-epitaxially along both interfaces through beam induced, defect mediated mobility of Er atoms. The crystalline quality of the ErSi2 layer strongly depends on the temperature during the second implantation.

Characterization of Films Made from Silicon Oil Saturated Methane Vapor by Ion Beam

1992 ◽  
Vol 279 ◽  
Author(s):  
Sin-Shong Lin ◽  
Janes M. Sloan
Keyword(s):  
Saturated Vapor ◽  
Ion Beam ◽  
Carbon Films ◽  
Amorphous Carbon Films ◽  
X Ray ◽  
Silicon Oil ◽  
Ion Beam Deposition ◽  
Steel Substrates ◽  
Beam Deposition

ABSTRACTAmorphous carbon films were prepared by the ion beam deposition of methane saturated with silicon pump oil 704. The concentration of Si in the ion deposited coatings could be varied by the temperature of silicon oil bath where saturated vapor was produced. In the process, the vapor ionized at 800 V was accelerated and impinged on glass or stainless steel substrates at ion densities between 0.3–1.5 mA/cm2 for a period of less than 60 minutes. The resulting films were characterized by x-ray photoelectron and Raman spectroscopies. The elemental components of these films include carbon, oxygen and silicon with varying amounts of nitrogen, iron and tungsten contaminations. The microstructure mainly consists of tiny graphitic carbon with sp2 ordered and disordered configurations, numerous carbon-oxygen and carbon-silicon linkages. This simple unique process yields a homogeneous thin coating suitable for many tribological applications.

Fabrication of W/C Multilayers by Direct Ion Beam Deposition

1993 ◽  
Vol 316 ◽  
Author(s):  
K. Ito ◽  
K. Nishimoto ◽  
K. Watanabe ◽  
I. Kataoka ◽  
Frédéric Widmann
Keyword(s):  
Ion Beam ◽  
Composite Layer ◽  
Layered Structures ◽  
Carbon Layer ◽  
Monolayer Films ◽  
Cross Sectional ◽  
Ion Energy ◽  
Ion Beam Deposition ◽  
The Difference ◽  
Beam Deposition

ABSTRACTThe multilayer structures of tungsten and carbon for soft x-ray mirrors were fabricated by the low energy (<100eV) direct ion beam deposition method with various depositing ion energies. The layered structures were observed by cross sectional TEM. The undulated structures were found in the layered structures of the depositing ion energy of 6OeV and lOOeV. It becomes larger as the depositing ion energy increases, and the undulation of the upper layers was larger than that of the under layers. The undulation seems to increase in each carbon layer. These results are quite different from the results of evaluation of thick monolayer films in the previous work. Then, the interfacial composite layer was evaluated by XPS. The tungsten carbide layer was found at the W/ C interface on the C layer. However, we can not find such layer at the interface on the W layer. This result can be explained by the difference of the momentum of the depositing ion.

scholarly journals Структурные особенности текстурированных пленок оксида цинка, полученных методом ионного распыления

2021 ◽  
Vol 55 (3) ◽  
pp. 230
Author(s):  
В.Г. Костишин ◽  
А.Ю. Миронович ◽  
А.В. Тимофеев ◽  
И.М. Исаев ◽  
Р.И. Шакирзянов ◽  
...  
Keyword(s):  
Ion Beam ◽  
Temperature Treatment ◽  
Zno Films ◽  
X Ray Diffraction ◽  
Polycrystalline Structure ◽  
Initial State ◽  
X Ray ◽  
Ion Beam Deposition ◽  
Diffraction Patterns ◽  
Beam Deposition

In this work, we studied textured ZnO films obtained by ion-beam deposition. X-ray diffraction patterns and micrographs of the surface revealed that asdeposited films have a polycrystalline structure. It was found that, after annealing of the samples in the temperature range from 200 ° C to 500 °, recrystallization occurs, leading to a change in the grain size and surface roughness. The dependence of the initial state of the film on the recrystallization intensity is also demonstrated. In films with an initially more perfect structure, temperature treatment at 500 ° C led to grain growth by more than 2 times and a decrease in roughness by ~ 40%.

Characterization and Reissue of SRM 2063 Thin-Film Glass Standard

1990 ◽  
Vol 48 (2) ◽  
pp. 436-437
Author(s):  
J. M. Phelps ◽  
E. B. Steel
Keyword(s):  
Thin Film ◽  
Cross Sections ◽  
Ion Beam ◽  
Sensitivity Factor ◽  
X Ray ◽  
Ion Beam Deposition ◽  
Commercial Laboratory ◽  
Ionization Cross Sections ◽  
Detector Configurations ◽  
Beam Deposition

X-ray energy-dispersive spectrometry (EDS) is an essential tool for chemical analysis .with an electron microscope. Quantification of an acquired spectrum is typically preformed using a “relative elemental sensitivity factor” or “k factor” approach. Because of differing instrumental and detector configurations, detector efficiencies and ionization cross sections, these sensitivity factors must be determined for individual instruments. SRM 2063 is the reissue of a thin film Standard Reference Material of known chemical composition, density, thickness, stability, and homogeneity to provide characteristic x-ray peak locations and intensities for elements in the 1 - 8 keV region. The experimental procedure utilizes several different techniques to characterize the samples and limit analytical bias.The original issue of SRM 2063 was produced by NIST personnel at a commercial laboratory using their ion beam deposition system. For the reissue of SRM 2063, a 10 cm diameter ion beam deposition system was acquired by NIST and used to sputter a fully characterized silicon, magnesium, calcium, and iron glass.

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