Optical pumping of IV-VI semiconductor multiple quantum well materials using a GaSb-based laser with emission at λ=2.5μm

2005 ◽  
Vol 97 (5) ◽  
pp. 053103 ◽  
Author(s):  
P. J. McCann ◽  
P. Kamat ◽  
Y. Li ◽  
A. Sow ◽  
H. Z. Wu ◽  
...  
Keyword(s):  
Quantum Well ◽  
Optical Pumping ◽  
Multiple Quantum Well ◽  
Multiple Quantum

Stimulated Emission from Single- and Multiple-Quantum-Well GaN-AlGaN Separate-Confinement Heterostructures

1996 ◽  
Vol 449 ◽  
Author(s):  
D. A. S. Loeber ◽  
N. G. Anderson ◽  
J. M. Redwing ◽  
J. S. Flynn ◽  
G. M. Smith ◽  
...  
Keyword(s):  
Quantum Well ◽  
Quantum Wells ◽  
Optical Pumping ◽  
Multiple Quantum Well ◽  
Emission Spectra ◽  
Stimulated Emission ◽  
Emission Characteristics ◽  
Multiple Quantum ◽  
Photoluminescence Properties ◽  
Single Quantum Well

ABSTRACTStimulated emission characteristics are examined for GaN-AlGaN separate-confinement quantum-well heterostructures grown by MOVPE on 4H-SiC substrates. We specifically focus on comparison of structures with different quantum well active region designs. Polarization resolved edge emission spectra and stimulated emission thresholds are obtained under optical pumping using a stripe excitation geometry. Stimulated emission characteristics are studied as a function of the number of quantum wells in the structure, and are correlated with surface photoluminescence properties. We find reduced stimulated emission thresholds and increased surface photoluminescence intensities as the number of quantum wells is reduced, with the best results obtained for a single-quantum-well structure. These results should provide useful information for the design of GaN-based quantum well lasers.

Optical pumping spectra for InxGa1-xN/GaN multiple-quantum-well structures with indium content x>0.35

2000 ◽  
Author(s):  
Chii-Chang Chen ◽  
HuiWen Chuang ◽  
GouChung Chi ◽  
ChangCheng Chuo ◽  
Jen-Inn Chyi
Keyword(s):  
Quantum Well ◽  
Optical Pumping ◽  
Multiple Quantum Well ◽  
Indium Content ◽  
Multiple Quantum ◽  
Quantum Well Structures

RESONANT TUNNELING STUDIES OF VARIABLY SPACED MULTIPLE QUANTUM WELL STRUCTURES IN THE AlGaAs SYSTEM

1987 ◽  
Vol 48 (C5) ◽  
pp. C5-457-C5-461
Author(s):  
C. J. SUMMERS ◽  
K. F. BRENNAN ◽  
A. TORABI ◽  
H. M. HARRIS ◽  
J. COMAS
Keyword(s):  
Quantum Well ◽  
Resonant Tunneling ◽  
Multiple Quantum Well ◽  
Multiple Quantum ◽  
Quantum Well Structures

Low-Temperature Operation of Green, Blue and UV InGaN/GaN Multiple-Quantum-Well Light-Emitting Diodes

2003 ◽  
Vol 764 ◽  
Author(s):  
X. A. Cao ◽  
S. F. LeBoeuf ◽  
J. L. Garrett ◽  
A. Ebong ◽  
L. B. Rowland ◽  
...  
Keyword(s):  
Quantum Well ◽  
Light Emitting Diodes ◽  
Multiple Quantum Well ◽  
Light Output ◽  
Localized States ◽  
Multiple Quantum ◽  
Nonradiative Recombination ◽  
Light Emitting ◽  
Temperature Range ◽  
Green Leds

Absract:Temperature-dependent electroluminescence (EL) of InGaN/GaN multiple-quantum-well light-emitting diodes (LEDs) with peak emission energies ranging from 2.3 eV (green) to 3.3 eV (UV) has been studied over a wide temperature range (5-300 K). As the temperature is decreased from 300 K to 150 K, the EL intensity increases in all devices due to reduced nonradiative recombination and improved carrier confinement. However, LED operation at lower temperatures (150-5 K) is a strong function of In ratio in the active layer. For the green LEDs, emission intensity increases monotonically in the whole temperature range, while for the blue and UV LEDs, a remarkable decrease of the light output was observed, accompanied by a large redshift of the peak energy. The discrepancy can be attributed to various amounts of localization states caused by In composition fluctuation in the QW active regions. Based on a rate equation analysis, we find that the densities of the localized states in the green LEDs are more than two orders of magnitude higher than that in the UV LED. The large number of localized states in the green LEDs are crucial to maintain high-efficiency carrier capture at low temperatures.

High-Temperature High-Frequency Operation of Single and Multiple Quantum Well InGaAs Semiconductor Lasers

2000 ◽  
Author(s):  
William J. Siskaninetz ◽  
Hank D. Jackson ◽  
James E. Ehret ◽  
Jeffrey C. Wiemeri ◽  
John P. Loehr
Keyword(s):  
High Temperature ◽  
Quantum Well ◽  
Semiconductor Lasers ◽  
High Frequency ◽  
Multiple Quantum Well ◽  
Multiple Quantum ◽  
High Frequency Operation

Photoconductive response time of a multiple quantum well pin modulator

1988 ◽  
Vol 24 (14) ◽  
pp. 854 ◽  
Author(s):  
R.J. Manning ◽  
P.J. Bradley ◽  
A. Miller ◽  
J.S. Roberts ◽  
P. Mistry ◽  
...  
Keyword(s):  
Quantum Well ◽  
Response Time ◽  
Multiple Quantum Well ◽  
Multiple Quantum

GaInAs/InP waveguide multiple-quantum-well optical modulator with 9 dB on/off ratio

1987 ◽  
Vol 23 (20) ◽  
pp. 1067 ◽  
Author(s):  
K. Wakita ◽  
S. Nojima ◽  
K. Nakashima ◽  
Y. Kawaguchi
Keyword(s):  
Quantum Well ◽  
Multiple Quantum Well ◽  
Optical Modulator ◽  
Multiple Quantum

Erratum: GaAs/AlGaAs multiple quantum well pin diodes grown by selective area epitaxy

1988 ◽  
Vol 24 (17) ◽  
pp. 1117
Author(s):  
D.A. Roberts ◽  
J.P.R. David ◽  
G. Hill ◽  
P.A. Houston ◽  
M.A. Pate ◽  
...  
Keyword(s):  
Quantum Well ◽  
Multiple Quantum Well ◽  
Multiple Quantum ◽  
Pin Diodes ◽  
Selective Area Epitaxy ◽  
Selective Area

1.5μm λ/4 shifted multiple quantum well distributed feedback laser diodes

1988 ◽  
Vol 24 (23) ◽  
pp. 1408 ◽  
Author(s):  
T. Sasaki ◽  
S. Takano ◽  
N. Henmi ◽  
H. Yamada ◽  
M. Kitamura ◽  
...  
Keyword(s):  
Quantum Well ◽  
Multiple Quantum Well ◽  
Laser Diodes ◽  
Distributed Feedback ◽  
Multiple Quantum ◽  
Distributed Feedback Laser
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