Stimulated emission characteristics of InGaN/GaN multiple quantum wells: Excitation length and excitation density dependence

1998 ◽  
Vol 73 (25) ◽  
pp. 3689-3691 ◽  
Author(s):  
T. J. Schmidt ◽  
S. Bidnyk ◽  
Yong-Hoon Cho ◽  
A. J. Fischer ◽  
J. J. Song ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Density Dependence ◽  
Stimulated Emission ◽  
Multiple Quantum Wells ◽  
Excitation Density ◽  
Emission Characteristics ◽  
Multiple Quantum

scholarly journals Excitation density dependence of the photoluminescence from CdxHg1-xTe multiple quantum wells

2008 ◽  
Vol 100 (4) ◽  
pp. 042024 ◽  
Author(s):  
C R Tonheim ◽  
E Selvig ◽  
S Nicolas ◽  
A E Gunnæs ◽  
M Breivik ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Density Dependence ◽  
Multiple Quantum Wells ◽  
Excitation Density ◽  
Multiple Quantum

Amplification Path Length Dependence Studies of Stimulated Emission from Optically Pumped InGaN/GaN Multiple Quantum Wells

1998 ◽  
Vol 537 ◽  
Author(s):  
T.J. Schmidt ◽  
S. Bidnyk ◽  
Yong-Hoon Cho ◽  
A.J. Fischer ◽  
J.J. Song ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Chemical Vapor ◽  
High Energy ◽  
Stimulated Emission ◽  
Multiple Quantum Wells ◽  
Excitation Density ◽  
Multiple Quantum ◽  
Optically Pumped ◽  
Energy Peak ◽  
The Difference

AbstractOptically pumped stimulated emission (SE) from InGaN/GaN multiple quantum wells (MQWs) grown by metalorganic chemical vapor deposition has been systematically studied as a function of excitation length (Lexc). Two distinct SE peaks were observed from these structures: one that originates at 425 nm at 10 K (430 nm at 300 K) and another that originates at 434 nm at 10 K (438 nm at 300 K). The SE threshold for the high energy peak was observed to always be lower than that of the low energy peak, but the difference was found to decrease greatly with increasing Lexc. A detailed study of the emission intensity of these two SE peaks as a function of excitation density shows that the two peaks compete for gain in the MQW active region.

scholarly journals Amplification Path Length Dependence Studies of Stimulated Emission from Optically Pumped InGaN/GaN Multiple Quantum Wells

1999 ◽  
Vol 4 (S1) ◽  
pp. 757-762 ◽  
Author(s):  
T.J. Schmidt ◽  
S. Bidnyk ◽  
Yong-Hoon Cho ◽  
A.J. Fischer ◽  
J.J. Song ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Chemical Vapor ◽  
High Energy ◽  
Stimulated Emission ◽  
Multiple Quantum Wells ◽  
Excitation Density ◽  
Multiple Quantum ◽  
Optically Pumped ◽  
Energy Peak ◽  
The Difference

Optically pumped stimulated emission (SE) from InGaN/GaN multiple quantum wells (MQWs) grown by metalorganic chemical vapor deposition has been systematically studied as a function of excitation length (Lexc). Two distinct SE peaks were observed from these structures: one that originates at 425 nm at 10 K (430 nm at 300 K) and another that originates at 434 nm at 10 K (438 nm at 300 K). The SE threshold for the high energy peak was observed to always be lower than that of the low energy peak, but the difference was found to decrease greatly with increasing Lexc. A detailed study of the emission intensity of these two SE peaks as a function of excitation density shows that the two peaks compete for gain in the MQW active region.

Ultraviolet Stimulated Emission From Optically Pumped AlGaN/AlGaN Multiple Quantum Wells on Pulsed Laterally Overgrown $a$-Plane GaN

2011 ◽  
Vol 4 (8) ◽  
pp. 082103 ◽  
Author(s):  
Mohamed Lachab ◽  
Krishnan Balakrishnan ◽  
Bin Zhang ◽  
Joe Dion ◽  
Qhalid Fareed ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Stimulated Emission ◽  
Multiple Quantum Wells ◽  
Multiple Quantum ◽  
Optically Pumped

Ultraviolet Stimulated Emission in GaN/AlGaN Multiple Quantum Wells

1998 ◽  
Vol 264-268 ◽  
pp. 1433-1436
Author(s):  
L. Calcagnile ◽  
G. Coli ◽  
D. Rinaldi ◽  
R. Cingolani ◽  
H. Tang ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Stimulated Emission ◽  
Multiple Quantum Wells ◽  
Multiple Quantum

Study of Near-Threshold Gain Mechanisms in MOCVD-Grown GaN Epilayers and InGaN/GaN Heterostructures

1999 ◽  
Vol 572 ◽  
Author(s):  
S. Bidnyk ◽  
T. J. Schmidt ◽  
B. D. Little ◽  
J. J. Song
Keyword(s):  
Quantum Wells ◽  
Stimulated Emission ◽  
Multiple Quantum Wells ◽  
Multiple Quantum ◽  
Optically Pumped ◽  
Electron Hole ◽  
Electron Hole Plasma ◽  
Narrow Emission ◽  
Threshold Gain ◽  
Near Threshold

ABSTRACTWe report the results of an experimental study on near-threshold gain mechanisms in optically pumped GaN epilayers and InGaN/GaN heterostructures at temperatures as high as 700 K. We show that the dominant near-threshold gain mechanism in GaN epilayers is inelastic excitonexciton scattering for temperatures below ∼ 150 K, characterized by band-filling phenomena and a relatively low stimulated emission (SE) threshold. An analysis of both the temperature dependence of the SE threshold and the relative shift between stimulated and band-edge related emission indicates electron-hole plasma is the dominant gain mechanism for temperatures exceeding 150 K. The dominant mechanism for SE in InGaN epilayers and InGaN/GaN multiple quantum wells was found to be the recombination of carriers localized at potential fluctuations resulting from nonuniform indium incorporation. The SE spectra from InGaN epilayers and multiple quantum wells were comprised of extremely narrow emission lines and no spectral broadening of the lines was observed as the temperature was raised from 10 K to over 550 K. Based on the presented results, we suggest a method for significantly reducing the carrier densities needed to achieve population inversion in GaN, allowing for the development of GaNactive-medium laser diodes.

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