Ultra Thin SiO2 Mask Layer for Nano-Scale Selective-Area Pecvd of Si

1996 ◽  
Vol 448 ◽  
Author(s):  
J. W. Park ◽  
T. Yasuda ◽  
K. Ikuta ◽  
L.H. Kuo ◽  
S. Yamasaki ◽  
...  
Keyword(s):  
Low Temperature ◽  
Oxide Layer ◽  
Chemical Vapor ◽  
Oxide Layers ◽  
Mask Layer ◽  
Selective Area ◽  
Si Nanostructures ◽  
Sio2 Mask ◽  
Area Deposition ◽  
Thin Plasma

AbstractWe discuss the applicability of ultrathin SiO2 layers as a mask for low-temperature selective-area deposition of Si. Thin oxide layers with estimated thickness ranging from 4 to 20 Å were formed by oxidizing H-terminated Si(100) surfaces by a remote plasma exposure at room temperature. Low-temperature selective-area deposition was carried out using two different techniques: flow-modulated plasma-enhanced chemical vapor deposition (FM-PECVD) using SiH4 and H2, and very low pressure CVD (VLPCVD) using Si2H4. We show that the ultra-thin plasma oxide layers exhibit good properties for a use as a passivating mask layer, and that the oxide layer can be patterned directly by E-beam irradiation. These results open up a possibility to realize Si-nanostructures formation by selective-area processing. Degradation of the oxide layer by plasma processing is also discussed.

Microstuctural Evolution and Substrate Selectivity in Pecvd μc-Si

1992 ◽  
Vol 283 ◽  
Author(s):  
Gregory N. Parsons ◽  
John J. Boland ◽  
James C. Tsang
Keyword(s):  
Hydrogen Plasma ◽  
Chemical Vapor ◽  
Process Conditions ◽  
Microcrystalline Silicon ◽  
Selective Area ◽  
Initial Nucleation ◽  
Bond Strain ◽  
Manufacturing Applications ◽  
Kinetics Of ◽  
Area Deposition

ABSTRACTWe discuss a process for selective area deposition of microcrystalline silicon (μc-Si) using plasma enhanced chemical vapor deposition at low substrate temperature (<300°C) using time modulated silane flow in a hydrogen plasma. We discuss selectivity and deposition rate on a variety of substrates with process conditions important for manufacturing applications, and show a distinct microstructural evolution in the initial nucleation layers using Raman spectroscopy that correlates with the transition from selective to non-selective growth. Atomic hydrogen discriminates between different degrees of bond strain in the nucleii formed on different substrates, and can increase the crystallinity fraction in films deposited at low temperatures by modifying the kinetics of bulk-like bond formation.

Selective area deposition of diamond thin films on patterns of porous silicon by hot‐filament chemical vapor deposition

1995 ◽  
Vol 67 (24) ◽  
pp. 3557-3559 ◽  
Author(s):  
S. Mirzakuchaki ◽  
M. Hajsaid ◽  
H. Golestanian ◽  
R. Roychoudhury ◽  
E. J. Charlson ◽  
...  
Keyword(s):  
Thin Films ◽  
Chemical Vapor Deposition ◽  
Porous Silicon ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Selective Area ◽  
Diamond Thin Films ◽  
Hot Filament ◽  
Area Deposition

Selective Area Laser Induced Deposition of Metal Boride Thin Films

1999 ◽  
Vol 558 ◽  
Author(s):  
Z.C. Zhong ◽  
V. Holmes ◽  
P.A. Dowben ◽  
D.J. Sellmyer
Keyword(s):  
Thin Films ◽  
Rare Earth ◽  
Chemical Vapor ◽  
Electrolytic Deposition ◽  
Solution Deposition ◽  
Selective Area ◽  
Rare Earth Chloride ◽  
Polycrystalline Thin Films ◽  
Area Deposition ◽  
Selection Of

ABSTRACTWe have developed a novel technique for the selective area deposition of rare earth hexaborides: laser-induced solution deposition (LISD). This technique is both simple and efficient and combines many advantages of both chemical vapor deposition and electrolytic deposition. The results of LISD deposition show that the polycrystalline thin films of rare earth hexaborides and sub-borides such as MB6, MB4, and MB2 (M = Gd, La) are formed through the light initiated chemical reaction of nido-decaborane (B10H14) and rare earth chloride in solution. These films grow with a strong texture growth axis and morphology that is dependent both on the selection of solvents and laser wavelengths and power used in LISD.

Low Temperature Selective Area Chemical Vapor Deposition of Gold Films: Growth and Characterization

1992 ◽  
Vol 282 ◽  
Author(s):  
Paul F. Seidler ◽  
Steven P. Kowalczyk ◽  
Mark M. Banaszak Holl ◽  
John J. Yurkas ◽  
Maurice H. Norcott ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Low Temperature ◽  
Vapor Deposition ◽  
Room Temperature ◽  
Chemical Vapor ◽  
Growth Behavior ◽  
Gold Films ◽  
High Quality ◽  
Selective Area ◽  
Cleaning Procedures

ABSTRACTSubstrate-selective, low-temperature chemical vapor deposition of high quality gold filmswas obtained with the new precursor ethyl(trimethylphosphine)gold(I) in an ultrahigh vacuum reactor designed to handle wafers up to 3 inches in diameter. Growth behavior at temperatures as low as room temperature as well as substrate pre-cleaning procedures are presented. Activation energies of 35.1 ± 0.4 kcal mol−1 and 18.3 ± 0.7 kcal mol−1 were found for growth of gold films on gold and copper substrates, respectively.

Selective Growth of B-Doped Diamond on Si-Doped Diamond Film

2012 ◽  
Vol 217-219 ◽  
pp. 1013-1017
Author(s):  
Y.X. Cui ◽  
B. Shen ◽  
F.H. Sun ◽  
Z.M. Zhang
Keyword(s):  
Diamond Film ◽  
Sacrificial Layer ◽  
Diamond Films ◽  
Chemical Vapor ◽  
Cvd Diamond ◽  
Selective Area ◽  
Si Doped ◽  
Cvd Diamond Film ◽  
Hot Filament ◽  
Area Deposition

Si doped CVD diamond films are prepared on Si substrate by means of hot filament chemical vapor deposition (HFCVD) through adding tetraethoxysilane (TEOS) into acetone as source of reactant gas during the growth process. The samples of diamond films are investigated by scanning electron micrograph (SEM), Raman spectrum, X-ray diffractometry (XRD) and surface profiler. The experimental results show that compared with pure diamond film, Si doped CVD diamond film exhibits grain refinement and smoother surface. Then selective area deposition (SAD) of B-doped diamond films are achieved on both Si doped CVD diamond film and pure CVD diamond film with silicon dioxide layer as sacrificial layer. SEM investigation demonstrates that the boundary of patterning on pure diamond film is rather fuzzy while on pure diamond film it is trim and distinct, which is mainly attributed to the relatively low surface roughness.

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