Low‐temperature selective‐area deposition of metals: Chemical vapor deposition of gold from ethyl(trimethylphosphine)gold(I)

1993 ◽  
Vol 62 (13) ◽  
pp. 1475-1477 ◽  
Author(s):  
M. M. Banaszak Holl ◽  
P. F. Seidler ◽  
S. P. Kowalczyk ◽  
F. R. McFeely
1995 ◽  
Vol 67 (24) ◽  
pp. 3557-3559 ◽  
Author(s):  
S. Mirzakuchaki ◽  
M. Hajsaid ◽  
H. Golestanian ◽  
R. Roychoudhury ◽  
E. J. Charlson ◽  
...  

1992 ◽  
Vol 282 ◽  
Author(s):  
Paul F. Seidler ◽  
Steven P. Kowalczyk ◽  
Mark M. Banaszak Holl ◽  
John J. Yurkas ◽  
Maurice H. Norcott ◽  
...  

ABSTRACTSubstrate-selective, low-temperature chemical vapor deposition of high quality gold filmswas obtained with the new precursor ethyl(trimethylphosphine)gold(I) in an ultrahigh vacuum reactor designed to handle wafers up to 3 inches in diameter. Growth behavior at temperatures as low as room temperature as well as substrate pre-cleaning procedures are presented. Activation energies of 35.1 ± 0.4 kcal mol−1 and 18.3 ± 0.7 kcal mol−1 were found for growth of gold films on gold and copper substrates, respectively.


ACS Omega ◽  
2021 ◽  
Author(s):  
Muhammad Aniq Shazni Mohammad Haniff ◽  
Nur Hamizah Zainal Ariffin ◽  
Poh Choon Ooi ◽  
Mohd Farhanulhakim Mohd Razip Wee ◽  
Mohd Ambri Mohamed ◽  
...  

Sign in / Sign up

Export Citation Format

Share Document