Resistless pattern definition and Si selective-area deposition using an ultrathin SiO2 mask layer treated by SiHCl3

2000 ◽  
Vol 76 (22) ◽  
pp. 3203-3205 ◽  
Author(s):  
T. Yasuda ◽  
M. Nishizawa ◽  
S. Yamasaki
Keyword(s):  
Mask Layer ◽  
Selective Area ◽  
Sio2 Mask ◽  
Area Deposition

Ultra Thin SiO2 Mask Layer for Nano-Scale Selective-Area Pecvd of Si

1996 ◽  
Vol 448 ◽  
Author(s):  
J. W. Park ◽  
T. Yasuda ◽  
K. Ikuta ◽  
L.H. Kuo ◽  
S. Yamasaki ◽  
...  
Keyword(s):  
Low Temperature ◽  
Oxide Layer ◽  
Chemical Vapor ◽  
Oxide Layers ◽  
Mask Layer ◽  
Selective Area ◽  
Si Nanostructures ◽  
Sio2 Mask ◽  
Area Deposition ◽  
Thin Plasma

AbstractWe discuss the applicability of ultrathin SiO2 layers as a mask for low-temperature selective-area deposition of Si. Thin oxide layers with estimated thickness ranging from 4 to 20 Å were formed by oxidizing H-terminated Si(100) surfaces by a remote plasma exposure at room temperature. Low-temperature selective-area deposition was carried out using two different techniques: flow-modulated plasma-enhanced chemical vapor deposition (FM-PECVD) using SiH4 and H2, and very low pressure CVD (VLPCVD) using Si2H4. We show that the ultra-thin plasma oxide layers exhibit good properties for a use as a passivating mask layer, and that the oxide layer can be patterned directly by E-beam irradiation. These results open up a possibility to realize Si-nanostructures formation by selective-area processing. Degradation of the oxide layer by plasma processing is also discussed.

Selective Area Deposition of Passivants, Insulators, and Epitaxial Films of II-VI Compound Semiconductors

1989 ◽  
Vol 161 ◽  
Author(s):  
D.L. Dreifus ◽  
Y. Lansari ◽  
J.W. Han ◽  
S. Hwang ◽  
J.W. Cook ◽  
...  
Keyword(s):  
Ohmic Contacts ◽  
Epitaxial Films ◽  
Semiconductor Surface ◽  
Epitaxial Layers ◽  
Double Crystal ◽  
Surface Areas ◽  
Selective Area ◽  
Lift Off ◽  
P Type ◽  
Area Deposition

ABSTRACTII-VI semiconductor surface passivants, insulators, and epitaxial films have been deposited onto selective surface areas by employing a new masking and lift-off technique. The II-VI layers were grown by either conventional or photoassisted molecular beam epitaxy (MBE). CdTe has been selectively deposited onto HgCdTe epitaxial layers as a surface passivant. Selective-area deposition of ZnS has been used in metal-insulator-semiconductor (MIS) structures. Low resistance ohmic contacts to p-type CdTe:As have also been realized through the use of selectively-placed thin films of the semi-metal HgTe followed by a thermal evaporation of In. Epitaxial layers of HgTe, HgCdTe, and HgTe-CdTe superlattices have also been grown in selective areas on CdZnTe substrates, exhibiting specular morphologies and double-crystal x-ray diffraction rocking curves (DCXD) with full widths at half maximum (FWHMs) as narrow as 140 arcseconds.

Laser-Induced Selective Copper Deposition on Polyimides and Semiconductors

1992 ◽  
Vol 282 ◽  
Author(s):  
Seong-Don Hwang ◽  
S. S. Kher ◽  
J. T. Spencer ◽  
P. A. Dowben
Keyword(s):  
Gas Phase ◽  
Copper Chloride ◽  
Copper Deposition ◽  
Copper Films ◽  
Liquid Phase Deposition ◽  
Metal Thin Films ◽  
Selective Area ◽  
Phase Cluster ◽  
Photolytic Decomposition ◽  
Area Deposition

ABSTRACTIt has been demonstrated that copper can be selectively deposited on a variety of substrates including Teflon (polytetrafluroethylene or PTFE), Kapton (polyimide resin), silicon and gallium arsnide from solution by photo-assisted initiated deposition. A copper containing solution was prepared from a mixture of copper(I) chloride (Cu2Ci2) and decaborane (B10H14) in diethyl ether and/or THF (tetrahydrofuran). The copper films were fabricated by ultraviolet photolytic decomposition of copper chloride and polyhedral borane clusters. This liquid phase deposition has a gas-phase cluster analog that also results in copper deposition via pyrolysis. The approach of depositing metal thin films selectively by pholysis from solution is a novel and an underutilized approach to selective area deposition.

Selective Area Growth by Metal Organic Vapor Phase Epitaxy and Atomic Layer Epitaxy Using Ga2O3as a Novel Mask Layer

1999 ◽  
Vol 38 (Part 1, No. 3A) ◽  
pp. 1516-1520 ◽  
Author(s):  
Shingo Hirose ◽  
Akihiro Yoshida ◽  
Masaaki Yamaura ◽  
Kazuhiko Hara ◽  
Hiro Munekata
Keyword(s):  
Vapor Phase ◽  
Atomic Layer ◽  
Vapor Phase Epitaxy ◽  
Atomic Layer Epitaxy ◽  
Selective Area Growth ◽  
Organic Vapor ◽  
Mask Layer ◽  
Selective Area ◽  
Area Growth ◽  
Metal Organic

Selective Area Deposition of Hot Filament CVD Diamond on 100 mm MOCVD Grown AlGaN/GaN Wafers

2019 ◽  
Vol 19 (2) ◽  
pp. 672-677 ◽  
Author(s):  
Raju Ahmed ◽  
Anwar Siddique ◽  
Jonathan Anderson ◽  
Chris Engdahl ◽  
Mark Holtz ◽  
...  
Keyword(s):  
Cvd Diamond ◽  
Selective Area ◽  
Hot Filament Cvd ◽  
Hot Filament ◽  
Area Deposition

Uv Absorption Spectra and Photolysis of Some Group II and Group VI Alkyls

1983 ◽  
Vol 29 ◽  
Author(s):  
S. J. C. Irvine ◽  
J. B. Mullin ◽  
D. J. Robbins ◽  
J. L. Glasper
Keyword(s):  
Absorption Spectra ◽  
Uv Absorption ◽  
Xenon Lamp ◽  
Group Vi ◽  
Cadmium Mercury Telluride ◽  
Mercury Telluride ◽  
Uv Absorption Spectra ◽  
Selective Area ◽  
Metal Organic ◽  
Area Deposition

ABSTRACTA preliminary study has been made of the UV photolysis of metal-organic compounds of Hg, Cd and Te which could be used for low-temperature, selective-area deposition of cadmium mercury telluride (CMT). High-resolution UV absorption spectra have been measured for dimethylcadmium (CdMe2), dimethylmercury (HgMe2) and diethyltelluride (TeEt2). Possible modes for photodissociation are discussed in the light of these results. The photodissociation of these alkyls was attempted in a hydrogen stream at atmospheric pressure using a mercury-xenon lamp, deposition being being onto a silica reaction tube. Yields of Cd, Hg and Te were measured under different deposition conditions to determine the dependence on UV intensity, alkyl concentration and flow velocity.

Microstuctural Evolution and Substrate Selectivity in Pecvd μc-Si

1992 ◽  
Vol 283 ◽  
Author(s):  
Gregory N. Parsons ◽  
John J. Boland ◽  
James C. Tsang
Keyword(s):  
Hydrogen Plasma ◽  
Chemical Vapor ◽  
Process Conditions ◽  
Microcrystalline Silicon ◽  
Selective Area ◽  
Initial Nucleation ◽  
Bond Strain ◽  
Manufacturing Applications ◽  
Kinetics Of ◽  
Area Deposition

ABSTRACTWe discuss a process for selective area deposition of microcrystalline silicon (μc-Si) using plasma enhanced chemical vapor deposition at low substrate temperature (<300°C) using time modulated silane flow in a hydrogen plasma. We discuss selectivity and deposition rate on a variety of substrates with process conditions important for manufacturing applications, and show a distinct microstructural evolution in the initial nucleation layers using Raman spectroscopy that correlates with the transition from selective to non-selective growth. Atomic hydrogen discriminates between different degrees of bond strain in the nucleii formed on different substrates, and can increase the crystallinity fraction in films deposited at low temperatures by modifying the kinetics of bulk-like bond formation.

Selective area deposition of diamond thin films on patterns of porous silicon by hot‐filament chemical vapor deposition

1995 ◽  
Vol 67 (24) ◽  
pp. 3557-3559 ◽  
Author(s):  
S. Mirzakuchaki ◽  
M. Hajsaid ◽  
H. Golestanian ◽  
R. Roychoudhury ◽  
E. J. Charlson ◽  
...  
Keyword(s):  
Thin Films ◽  
Chemical Vapor Deposition ◽  
Porous Silicon ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Selective Area ◽  
Diamond Thin Films ◽  
Hot Filament ◽  
Area Deposition

Predictive Surface Kinetic Analysis: The Case of TiSi2 CVD

1993 ◽  
Vol 334 ◽  
Author(s):  
M. A. Mendicino ◽  
R. P. Southwell ◽  
E. G. Seebauer
Keyword(s):  
Gas Phase ◽  
Film Growth ◽  
Growth Conditions ◽  
Si Substrate ◽  
Quantitative Correlation ◽  
Selective Area ◽  
Metal Silicides ◽  
High Production ◽  
Reaction Stoichiometry ◽  
Area Deposition

Recently, TiSi2 has been the object of considerable study because of its low resistivity among the transition metal silicides and its compatibility with existing ULSI technology [1,2]. Film growth by CVD offers the potential for selective area deposition and high production throughput. However, selective CVD of TiSi2 from gas phase SiH4 and TiCl4 is usually accompanied by a competing reaction which consumes intolerable amounts of the Si substrate [3,4]. Controlling this consumption is crucial in TiSi2 growth; however, no quantitative correlation exists between silicon consumption and growth conditions or film thickness. Additionally, the reaction mechanism for TiSi2 growth is poorly understood, and some disagreement even exists about the reaction stoichiometry [5,6]. The combined CVD/UHV approach we have developed fills many gaps in the current understanding of TiSi2 CVD.

Demonstrating the Utility of Boron Based Precursor Molecules for Selective Area DepositIon in a Scanning Tunnelling Microscope

1991 ◽  
Vol 236 ◽  
Author(s):  
F. Keith Perkins ◽  
M. Onellion ◽  
Sunwoo Lee ◽  
P.A. Dowben
Keyword(s):  
Main Group ◽  
Cluster Compounds ◽  
Scanning Tunnelling Microscope ◽  
Selective Area ◽  
Scanning Tunnelling ◽  
Spatial Dimensions ◽  
Gaseous Precursor ◽  
Precursor Molecules ◽  
Area Deposition

AbstractThe scanning tunnelling microscope (STM) can be used to selectively deposit material from a gaseous precursor compound. Ultrasmall (less than a 100 nm across) spatial dimensions for selective area deposition may be achieved by this means. In this paper we outline a scheme forselecting and designing main group cluster compounds and organometallics for this type of selective area deposition using nido-decaborane(14) as an example.

Sign in / Sign up

Export Citation Format

Share Document