ChemInform Abstract: DEPOSITION OF TANTALUM SILICIDE THIN FILMS BY LOW PRESSURE CHEMICAL VAPOR METHOD (L.P.C.V.D.)

1985 ◽  
Vol 16 (15) ◽  
Author(s):  
A. BOUTEVILLE ◽  
A. ROYER ◽  
J.-C. REMY
Keyword(s):  
Thin Films ◽  
Chemical Vapor ◽  
Low Pressure ◽  
Pressure Chemical ◽  
Tantalum Silicide ◽  
Vapor Method

A Novel Direct Liquid Injection Low Pressure Chemical Vapor Deposition System (DLI-LPCVD) for the Deposition of Thin Films

2017 ◽  
Vol 19 (8) ◽  
pp. 1700193 ◽  
Author(s):  
Mattias Vervaele ◽  
Bert De Roo ◽  
Jolien Debehets ◽  
Marilyne Sousa ◽  
Luman Zhang ◽  
...  
Keyword(s):  
Thin Films ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Low Pressure ◽  
Liquid Injection ◽  
Pressure Chemical ◽  
Direct Liquid Injection

scholarly journals Controlled Deposition of Lead Iodide and Lead Chloride Thin Films by Low-Pressure Chemical Vapor Deposition

Coatings ◽  
2020 ◽  
Vol 10 (12) ◽  
pp. 1208
Author(s):  
Siphelo Ngqoloda ◽  
Christopher J. Arendse ◽  
Theophillus F. Muller ◽  
Siphesihle S. Magubane ◽  
Clive J. Oliphant
Keyword(s):  
Thin Films ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Low Pressure ◽  
Lead Chloride ◽  
Lead Iodide ◽  
Cvd Method ◽  
Average Grain Size ◽  
Pressure Chemical ◽  
Lead Halide

Lead halide thin films, such as lead iodide (PbI2) and lead chloride (PbCl2), are used as precursor films for perovskite preparation, which is frequently achieved by vacuum thermal evaporation but rarely by the low-pressure chemical vapor deposition (CVD) method. Here, we report on the deposition of PbI2 and PbCl2 thin films on glass substrates by employing the low-pressure CVD method. The effect of the substrate temperature on the structure and morphology of the lead halide films is investigated. Crystalline films were realized for both lead halides, with PbI2 films showing high texture compared to the reduced texture of the PbCl2 films. Large lateral grain sizes were observed for the PbI2 films with a flat platelet grain morphology and an average grain size up to 734.2 ± 144.8 nm. PbCl2 films have columnar grains with an average grain size up to 386.7 ± 119.5 nm. The PbI2 films showed a band gap of about 2.4 eV, confirming its semiconducting properties, and the PbCl2 had a wide band gap of 4.3 eV, which shows the insulating properties of this material.

Homoepitaxial growth of β-Ga2O3 thin films by low pressure chemical vapor deposition

2016 ◽  
Vol 108 (18) ◽  
pp. 182105 ◽  
Author(s):  
Subrina Rafique ◽  
Lu Han ◽  
Marko J. Tadjer ◽  
Jaime A. Freitas ◽  
Nadeemullah A. Mahadik ◽  
...  
Keyword(s):  
Thin Films ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Low Pressure ◽  
Homoepitaxial Growth ◽  
Pressure Chemical

Direct Liquid Injection − Low Pressure Chemical Vapor Deposition of Silica Thin Films from Di-t-butoxydiacetoxysilane

2017 ◽  
Vol 19 (12) ◽  
pp. 1700425 ◽  
Author(s):  
Mattias Vervaele ◽  
Bert De Roo ◽  
Jolien Debehets ◽  
Marilyne Sousa ◽  
Luman Zhang ◽  
...  
Keyword(s):  
Thin Films ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Low Pressure ◽  
Silica Thin Films ◽  
Liquid Injection ◽  
Pressure Chemical ◽  
Direct Liquid Injection
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