Composition, Bonding state, and Electrical Properties of Carbon Nitride Films Formed by Electrochemical Deposition Technique

2011 ◽  
Vol 1282 ◽  
Author(s):  
Hideo Kiyota ◽  
Mikiteru Higashi ◽  
Tateki Kurosu ◽  
Masafumi Chiba
Keyword(s):  
Electrical Properties ◽  
Electrochemical Deposition ◽  
Carbon Nitride ◽  
Chemical Deposition ◽  
Photoelectron Spectra ◽  
Metal Insulator ◽  
X Ray ◽  
Bonding State ◽  
Scale Integration ◽  
Deposited Films

ABSTRACTComposition, bonding state, and electrical properties of CNx films formed by electro-chemical deposition using liquid acrylonitrile were studied. X-ray photoelectron spectra reveal that C, N, and O are major components of the deposited films. From analysis of C 1s and N 1s spectra, the major bonding state in the CNx film is attributed to a mixture of C≡N and partially hydrogenated C=N bond. Metal-insulator-semiconductor capacitors incorporating the CNx insulating layers are fabricated to evaluate the electrical properties of the deposited films. The lowest dielectric constant k of the CNx film is determined to be 2.6 from the accumulation capacitance and the thickness of the film. It is demonstrated that the CNx film formed by electrochemical deposition is a promising low-k material for use in ultralarge-scale integration multilevel interconnections.

Carbon Nitride Films Prepared by PECVD in CH4-NH3 Precursor

2012 ◽  
Vol 538-541 ◽  
pp. 124-127 ◽  
Author(s):  
Jing Ni ◽  
Xi Ping Hao
Keyword(s):  
Nitrogen Content ◽  
Photoelectron Spectroscopy ◽  
Carbon Nitride ◽  
Chemical Vapor ◽  
X Ray ◽  
Nano Indentation ◽  
Film Hardness ◽  
Indentation Experiment ◽  
Deposited Films ◽  
Deposition Technology

Carbon nitride (CNx) films were fabricated by plasma enhanced chemical vapor deposition technology in methane-ammonia system, in which the plasma was excited by the hollow cathode glow discharge. The composition，microstructure and hardness of the deposited films were investigated by measurements employing X-ray photoelectron spectroscopy, Fourier transform infrared spectroscopy and nano-indentation experiment. The results indicate that the nitrogen content in the film varies from 4.2 to 8.6 at.% and the nitrogen atoms are bonded to carbon atoms through C-N, C=N and C≡N bonds. Furthmore, higher nitrogen content is in favor of the formation of C-N bond, which may enhance the film hardness.

scholarly journals The Optimum Fabrication Condition of p-Type Antimony Tin Oxide Thin Films Prepared by DC Magnetron Sputtering

2016 ◽  
Vol 2016 ◽  
pp. 1-11 ◽  
Author(s):  
Huu Phuc Dang ◽  
Quang Ho Luc ◽  
Tran Le ◽  
Van Hieu Le
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Magnetron Sputtering ◽  
Tin Oxide ◽  
Hole Concentration ◽  
Dc Magnetron Sputtering ◽  
Rutile Structure ◽  
X Ray ◽  
P Type ◽  
Deposited Films

Transparent Sb-doped tin oxide (ATO) thin films were fabricated on quartz glass substrates via a mixed (SnO2+ Sb2O3) ceramic target using direct current (DC) magnetron sputtering in ambient Ar gas at a working pressure of 2 × 10−3 torr. X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), Hall-effect, and UV-vis spectra measurements were performed to characterize the deposited films. The substrate temperature of the films was investigated in two ways: (1) films were annealed in Ar ambient gas after being deposited at room temperature or (2) they were deposited directly at different temperatures. The first process for fabricating the ATO films was found to be easier than the second process. The deposited films showed p-type electrical properties, a polycrystalline tetragonal rutile structure, and their average transmittance was greater than 80% in the visible light range at the optimum annealing temperature of 500°C. The best electrical properties of the film were obtained on a 10 wt% Sb2O3-doped SnO2target with a resistivity, hole concentration, and Hall mobility of 0.55 Ω·cm, 1.2 × 1019 cm−3, and 0.54 cm2V−1s−1, respectively.

Properties of Plasma Oxynitride Films On Strained Sige

1996 ◽  
Vol 446 ◽  
Author(s):  
M. Mukhopadhyay ◽  
L.K. Bera ◽  
S.K. Ray ◽  
C.K. Maiti
Keyword(s):  
Electrical Properties ◽  
Photoelectron Spectroscopy ◽  
Charge Trapping ◽  
Dielectric Films ◽  
Oxide Interface ◽  
X Ray ◽  
Oxynitride Film ◽  
Hole Confinement ◽  
Deposited Films ◽  
Strained Sige

AbstractThe electrical properties of oxynitride films on strained SiGe grown and deposited, respectively, using a N2O and a combination of N2O and hexamethyldisilazane (HMDS) plasma are reported. X-ray photoelectron spectroscopy (XPS) analysis of the N2O grown films have shown the incorporation of N at the oxide interface without any Ge segregation. The hole confinement in accumulation in SiGe/Si heterostructure with 90 Å N2O oxynitride film has been observed by C-V measurements. Plasma reoxidation of N2O grown dielectric films has resulted in significant improvement of electrical properties. Oxynitride films deposited using PECVD of HMDS have shown comparatively inferior properties. Films deposited from a mixture of N2O and HMDS, exhibit the highest value of Dit (1x1012 cm-2eV-1), probably due to higher amount of nitrogen incorporation at the interface. The charge trapping behavior of both the grown and deposited films have been studied. The effect of addition of NH3 in HMDS plasma and N2O oxidation prior to HMDS PECVD on the charge trapping behavior has been studied.

Study of transition metal oxides by photoelectron spectroscopy

1979 ◽  
Vol 367 (1729) ◽  
pp. 239-252 ◽  
Keyword(s):  
Transition Metal Oxides ◽  
Photoelectron Spectroscopy ◽  
Metal Ion ◽  
Binding Energies ◽  
Photoelectron Spectra ◽  
Final State ◽  
Metal Insulator ◽  
X Ray ◽  
Valence States ◽  
Related Series

Systematics in the X-ray photoelectron spectra (X. p. e. s.) of Ti, V, Cr, Mn and Nb oxides with the metal ion in different oxidation states as well as of related series of mono-, sesqui- and di-oxides of the first row transi­tion metals have been investigated in detail. Core level binding energies, spin-orbit splittings and exchange splittings are found to exhibit inter­esting variations with the oxidation state of the metal or the nuclear charge The 3d binding energies of the monoxides show a proportionality to Goodenough’s ( R — R c ). Other aspects of interest in the study are the satellite structure and final state effects in the X. p. e. s. of the oxides, and identification of different valence states in oxides of the general formulae M n O 2 n -1 and M 3 O 4 . The nature of changes in the 3d bands of oxides under­-going metal-insulator transitions is also indicated.

X-ray photoelectron spectra and electrical properties of new metal complexes of [M(DMID)2][TAA]x

1995 ◽  
Vol 74 (2) ◽  
pp. 137-143 ◽  
Author(s):  
Sheng-Gao Liu ◽  
Yun-Qi Liu ◽  
Shi-Hong Liu ◽  
Dao-Ben Zhu
Keyword(s):  
Electrical Properties ◽  
Metal Complexes ◽  
Photoelectron Spectra ◽  
X Ray

Combinatorial Pulsed Laser Deposition of ITO-ZnO:Al Thin Films for Solar Cells Applications

2008 ◽  
Vol 1074 ◽  
Author(s):  
Doina Craciun ◽  
Gabriel Socol ◽  
Ion N. Mihailescu ◽  
Valentin Craciun
Keyword(s):  
Electrical Properties ◽  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Transparent Electrode ◽  
Laser Deposition ◽  
Optical And Electrical Properties ◽  
X Ray ◽  
Reflectivity Spectra ◽  
Quartz Substrates ◽  
Deposited Films

ABSTRACTTransparent and conductive mixtures of ITO-ZnO and ITO-ZnO:Al have been deposited by a combinatorial pulsed laser deposition on Si and quartz substrates. Measurements of the In to Zn ratios along the transversal axis of the substrates were performed using energy dispersive x-ray spectroscopy. From simulations of the x-ray reflectivity spectra, collected with a 2 mm mask on different locations along the transversal axis of the samples, the density and thickness of the deposited films were calculated and then the In to Zn ratios. The crystalline structure and electrical properties of the deposited films were also investigated along the same axis. Changes in the ratio of In/Zn along this axis resulted in changes of the lattice constant, texture, optical and electrical properties of the films. By changing the In to Zn ration we could tailor the properties of the transparent electrode and found ways to partially replace the more expensive ITO material with ZnO.

Interpretation of X-ray photoelectron spectra of carbon-nitride thin films: New insights from in situ XPS

Carbon ◽  
2016 ◽  
Vol 108 ◽  
pp. 242-252 ◽  
Author(s):  
Niklas Hellgren ◽  
Richard T. Haasch ◽  
Susann Schmidt ◽  
Lars Hultman ◽  
Ivan Petrov
Keyword(s):  
Thin Films ◽  
Carbon Nitride ◽  
Photoelectron Spectra ◽  
X Ray ◽  
In Situ Xps

X-ray Photoelectron Spectra and Electrical Properties of the K4.3V6O16.2Polyvanadate

2004 ◽  
Vol 40 (3) ◽  
pp. 281-284 ◽  
Author(s):  
V. Bondarenka ◽  
V. L. Volkov ◽  
N. V. Podval'naya ◽  
S. Grebinskii ◽  
S. Mitskyavichyus ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Photoelectron Spectra ◽  
X Ray
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