Mechanical and Dielectric Properties of Low Permittivity Dielectric Materials

1996 ◽  
Vol 443 ◽  
Author(s):  
A. Alptekin ◽  
G. Czeremuszkin ◽  
L. Martinu ◽  
M. Meunier ◽  
E. Sacher ◽  
...  
Keyword(s):  
Dielectric Materials ◽  
Substantial Improvement ◽  
Dielectric Constants ◽  
Thermal Treatments ◽  
Metal System ◽  
Treatment Techniques ◽  
Peel Tests ◽  
Low Permittivity ◽  
Dielectric And Mechanical Properties ◽  
Poor Adhesion

AbstractThe dielectric and mechanical properties of low permittivity dielectric/metal system consisting of fluoropolymers and copper were studied. The types of polymers in this study include sputtered Teflon, plasma-deposited fluoropolymers and the soluble Teflon AF1600. All these fluoropolymers have dielectric constants below 2.0 and dissipation factors below 0.001. Copper was either evaporated or sputtered. Adhesion of copper to fluoropolymers was studied using scratch and peel tests. Different thermal treatment techniques were applied to enhance adhesion, including preannealing in vacuum or in atmosphere, as well as postannealing in vacuum. The results show generally poor adhesion for evaporated copper, with substantial improvement for sputtered copper; however thermal treatments enhance adhesion in some cases. FTIR, surface tension and XPS experiments were carried out in an effort to understand these effects. Our findings will be discussed in terms of the various effects contributing to copper/fluoropolymer adhesion.

LOW LOSS DIELECTRIC MATERIALS FOR HIGH FREQUENCY APPLICATIONS

2009 ◽  
Vol 23 (17) ◽  
pp. 3649-3654 ◽  
Author(s):  
MOHAN V. JACOB
Keyword(s):  
High Frequency ◽  
Room Temperature ◽  
Low Cost ◽  
Dielectric Materials ◽  
Dielectric Constants ◽  
Transmission Losses ◽  
Low Loss ◽  
Microwave Characterization ◽  
Materials Used ◽  
Low Temperature Electronics

The microwave properties of some of the low cost materials which can be used in high frequency applications with low transmission losses are investigated in this paper. One of the most accurate microwave characterization techniques, Split Post Dielectric Resonator technique (SPDR) is used for the experimental investigation. The dielectric constants of the 3 materials scrutinized at room temperature and at 10K are 3.65, 2.42, 3.61 and 3.58, 2.48, 3.59 respectively. The corresponding loss tangent values are 0.00370, 0.0015, 0.0042 and 0.0025, 0.0009, 0.0025. The high frequency transmission losses are comparable with many of the conventional materials used in low temperature electronics and hence these materials could be implemented in such applications.

Designing Ultra Low-k Dielectric Materials for Ease of Patterning

2010 ◽  
Vol 1249 ◽  
Author(s):  
George Andrew Antonelli ◽  
Gengwei Jiang ◽  
Mandyam Sriram ◽  
Kaushik Chattopadhyay ◽  
Wei Guo ◽  
...  
Keyword(s):  
Inductively Coupled Plasma ◽  
Ion Beam ◽  
Plasma Reactor ◽  
Dielectric Materials ◽  
Dielectric Constants ◽  
Interlayer Dielectric ◽  
Inductively Coupled ◽  
Inductively Coupled Plasma Reactor ◽  
Low K

AbstractOrganosilicate materials with dielectric constants (k) ranging from 3.0 to 2.2 are in production or under development for use as interlayer dielectric materials in advanced interconnect logic technology. The dielectric constant of these materials is lowered through the addition of porosity which lowers the film density, making the patterning of these materials difficult. The etching kinetics and surface roughening of a series of low-k dielectric materials with varying porosity and composition were investigated as a function of ion beam angle in a 7% C4F8/Ar chemistry in an inductively-coupled plasma reactor. A similar set of low-k samples were patterned in a single damascene scheme. With a basic understanding of the etching process, we will show that it is possible to proactively design a low-k material that is optimized for a given patterning. A case study will be used to illustrate this point.

B-O Bond Character and Microwave Dielectric Properties of (1-x)CaTiO3-xCa(Zn1/3Nb2/3)O3 Perovskite Ceramics

2009 ◽  
Vol 421-422 ◽  
pp. 69-72
Author(s):  
Jie Shen ◽  
Wen Chen ◽  
Jing Zhou ◽  
Jie Zhu ◽  
Qiong Lei
Keyword(s):  
Dielectric Constant ◽  
Dielectric Properties ◽  
Microwave Dielectric Properties ◽  
Dielectric Materials ◽  
Solid State Reaction Method ◽  
Dielectric Constants ◽  
Identical Result ◽  
Microwave Dielectric ◽  
Calculation Results ◽  
The Relationship

The relationship between the character of the B-site cation–oxygen bond and the microwave dielectric properties in perovskites dielectric materials was studied in this paper. The atomic net charge of CaTiO3 (CT) and Ca(Zn1/3Nb2/3)O3 (CZN) was calculated respectively. The calculating result implies that the covalency of B-O bonds in CZN is stronger than that in CT. This predicted that the dielectric constant and loss of the ceramics will decrease after CZN incorporated in CT. To confirme the prediction, (1-x)CT-xCZN microwave dielectric ceramics were prepared by solid state reaction method with ZnNb2O6 as precursor. The structure analysis in terms of tolerance factor gives an identical result as calculation. The microwave dielectric properties, such as dielectric constants, Q×f values and τf were studied as a function of composition. With x increasing from 0.2 to 0.8, the dielectric constant linearly decreases from 109 to 49.37, the Q×f value increases from 8,340 to 13,200 GHz, and τf decreases from 321 to -18 ppm/°C. The properties trends are consistent with the previous calculation results, and confirm the relationship between the character of B-O bond and dielectric properties.

Optimization of Dielectric Cap Adhesion to Ultra-Low-k Dielectrics

2004 ◽  
Vol 812 ◽  
Author(s):  
Greg Spencer ◽  
Alfred Soyemi ◽  
Kurt Junker ◽  
Jason Vires ◽  
Michael Turner ◽  
...  
Keyword(s):  
Adhesion Strength ◽  
Dielectric Materials ◽  
Substantial Improvement ◽  
Film Deposition ◽  
Interface Adhesion ◽  
K Value ◽  
Layer Film ◽  
Point Bend ◽  
Low K ◽  
Deposition Conditions

AbstractIn this work, the adhesion of CVD dielectric caps to ULK MSQ spin-on dielectric materials with k values of 2.2 and 2.0, and a ULK CVD material with a k value of 2.7 is presented. A substantial improvement in cap adhesion to both the k2.2 ULK MSQ and the k2.7 ULK CVD material is demonstrated. The improvement is obtained using a low-k CVD glue material between the ULK dielectric and the subsequent cap material and/or by optimizing the CVD cap film deposition. Four-point bend measurement of adhesion strength is used to quantify the improvement in interface adhesion. The improvement in CVD cap adhesion is demonstrated to be strongly dependent upon both the glue layer film and the cap deposition conditions. While optimization of the CVD cap materials results in adequate adhesion for the k2.2 ULK MSQ, these improvements are demonstrated not to extend to the k2.0 ULK MSQ film.

New hybrid low-k dielectric materials prepared by vinylsilane polymerization

2004 ◽  
Vol 812 ◽  
Author(s):  
Jung-Won Kang ◽  
Byung Ro Kim ◽  
Gwi-Gwon Kang ◽  
Myung-Sun Moon ◽  
Bum-Gyu Choi ◽  
...  
Keyword(s):  
Fracture Toughness ◽  
Hybrid Materials ◽  
Dielectric Materials ◽  
Dielectric Constants ◽  
Good Adhesion ◽  
Inorganic Hybrid ◽  
Adhesion Promoters ◽  
Semiconductor Structures ◽  
Wide Range ◽  
Low K

AbstractSpin-on Low-K materials are potentially very attractive as interconnection materials in a wide range of semiconductor structures. In this work, new organic-inorganic hybrid materials synthesized by vinylsilane polymerization were proposed. According to compositions and additional fabrications, dielectric constants of these materials were evaluated to be 2.3∼3.1. The hardness was 2.0GPa after 430°C curing. These materials had good adhesion strength such that fracture toughness on silicon wafer was 0.22 MPam0.5 without any adhesion promoters. This result indicates that these organicinorganic hybrid materials are very promising candidates for low-K dielectrics.

Integration Challenges for Chemical Mechanical Polishing of Cu/Low-κ Interconnects

2003 ◽  
Vol 767 ◽  
Author(s):  
Jeffrey A. Lee ◽  
Mansour Moinpour ◽  
Huey-Chiang Liou ◽  
Thomas Abell
Keyword(s):  
Chemical Mechanical Polishing ◽  
Structural Reliability ◽  
Dielectric Materials ◽  
Mechanical Polishing ◽  
Copper Metallization ◽  
Metal Line ◽  
Significant Challenge ◽  
Microelectronic Devices ◽  
Improved Performance ◽  
Low Permittivity

AbstractThe drive for improved performance of microelectronic devices has led to the prevalence of copper metallization and the aggressive development of low-permittivity (low-κ) dielectric materials for use as interlayer dielectrics in BEOL interconnect structures. Progressive scaling of metal line widths coupled with the need to incorporate ultra low-κ (ULK) dielectrics, with κ<2.2, presents numerous challenges for integration and reliability. Perhaps the most significant challenge for the 90nm technology node and beyond is successful planarization of Cuinterconnect structures by chemical mechanical polishing (CMP). The present paper will discuss the general integration challenges and key structural reliability issues for chemical mechanical polishing of Cu-interconnects incorporating ULK dielectric materials.

scholarly journals Preparation and Application of Organic-Inorganic Nanocomposite Materials in Stretched Organic Thin Film Transistors

Polymers ◽  
2020 ◽  
Vol 12 (5) ◽  
pp. 1058
Author(s):  
Yang-Yen Yu ◽  
Cheng-Huai Yang
Keyword(s):  
Thin Film ◽  
Gate Dielectric ◽  
Thin Film Transistor ◽  
Dielectric Materials ◽  
Dielectric Constants ◽  
Inorganic Nanoparticles ◽  
Semiconductor Layer ◽  
Organic Thin Film ◽  
Switching Current ◽  
High Dielectric

High-transparency soluble polyimide with COOH and fluorine functional groups and TiO2-SiO2 composite inorganic nanoparticles with high dielectric constants were synthesized in this study. The polyimide and inorganic composite nanoparticles were further applied in the preparation of organic-inorganic hybrid high dielectric materials as the gate dielectric for a stretchable transistor. The optimal ratio of organic and inorganic components in the hybrid films was investigated. In addition, Jeffamine D2000 and polyurethane were added to the gate dielectric to improve the tensile properties of the organic thin film transistor (OTFT) device. PffBT4T-2OD was used as the semiconductor layer material and indium gallium liquid alloy as the upper electrode. Electrical property analysis demonstrated that the mobility could reach 0.242 cm2·V−1·s−1 at an inorganic content of 30 wt.%, and the switching current ratio was 9.04 × 103. After Jeffamine D2000 and polyurethane additives were added, the mobility and switching current could be increased to 0.817 cm2·V−1·s−1 and 4.27 × 105 for Jeffamine D2000 and 0.562 cm2·V−1·s−1 and 2.04 × 105 for polyurethane, respectively. Additives also improved the respective mechanical properties. The stretching test indicated that the addition of polyurethane allowed the OTFT device to be stretched to 50%, and the electrical properties could be maintained after stretching 150 cycles.

First Principles Modeling Of High-K Dielectric Materials

2002 ◽  
Vol 745 ◽  
Author(s):  
Gyuchang Jun ◽  
Kyeongjae Cho
Keyword(s):  
Metal Oxide ◽  
Metal Oxides ◽  
First Principles ◽  
Density Functional ◽  
Oxide Thickness ◽  
Dielectric Materials ◽  
Interface Layer ◽  
Dielectric Constants ◽  
High K ◽  
Interface Layers

ABSTRACTFirst-principles calculations are performed for high-K gate dielectric materials using model bulk and interface systems. Detailed electronic structures and atomic configurations are investigated for transition metal (Hf and Zr) oxide, metal doped silicate bulk system and a model Si-silicate interface system. Pseudo polymorphs of metal oxides are investigated to elucidate the underlying driving mechanisms in microscopic configurations of metal oxides and silicates in amorphous structures. We studied energetics and electronic structure of metal oxide pseudo morph with varying oxygen coordination. Dielectric constants of metal oxide and silicate materials are also investigated using the density functional perturbation theory method implemented in the ABINIT code. Electronic and dielectric properties of silica interface layers between high-κ dielectric and Si substrate are investigated leading to a confirmation that 1 nm is the physical limit of gate oxide thickness. Furthermore silica interface layer is found to have small dielectric constant of 3.4∼3.9.

CRYSTALLIZATION OF POLARONS IN DOPED IONIC MATERIALS

1995 ◽  
Vol 09 (25) ◽  
pp. 1665-1672 ◽  
Author(s):  
PASCAL QUÉMERAIS
Keyword(s):  
Doping Concentration ◽  
Dielectric Materials ◽  
Dielectric Constants ◽  
Doping Density ◽  
Low Frequencies ◽  
Ionic Materials ◽  
Repulsive Interactions ◽  
The Stability ◽  
Good Agreement

Large polarons are observed in dielectric materials. Since they have repulsive interactions when the dielectric constants satisfy proper conditions, we propose a model for the crystallization of polarons at low doping concentrations. We calculate the energy at T=0 K and discuss the stability as regards to carriers’ density. With phonons having low frequencies, an instability is related to the polaron dissociation, and we estimate a critical doping density. Applying our model to La 2−x Sr x CuO 4, we find a good agreement with the experimental critical doping concentration xc≈0.06 for the insulator-to-metal transition.

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