Influence Of Donor, Acceptor, And Isovalent Impurity Doping On Arsenic Excess And Point Defects In Low Temperature Grown GaAs

1996 ◽  
Vol 442 ◽  
Author(s):  
V. V. Chaldyshev ◽  
A. E. Kunitsyn ◽  
N. N. Faleev ◽  
V. V. Preobrazhenskii ◽  
M. A. Putyato ◽  
...  
Keyword(s):  
Low Temperature ◽  
Point Defects ◽  
Molecular Beam ◽  
Acceptor Doping ◽  
Gallium Vacancy ◽  
Gaas Films ◽  
Impurity Doping ◽  
Donor Acceptor ◽  
Antisite Defects ◽  
Free Material

AbstractWe show that in contrast to Si donor and Be acceptor doping, isovalent In impurity doping enhances arsenic excess in the GaAs films grown by molecular beam epitaxy at low temperature. This effect is due to an increase in the concentration of arsenic antisite defects. Gallium vacancy related defects are detected only in the samples annealed at high temperature. Their concentration is found to be higher in the indium-free material than in the indium doped one

Point defects in III–V materials grown by molecular beam epitaxy at low temperature

1993 ◽  
Vol 22 (1) ◽  
pp. 16-22 ◽  
Author(s):  
P. Hautojärvi ◽  
J. Mäkinen ◽  
S. Palko ◽  
K. Saarinen ◽  
C. Corbel ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Low Temperature ◽  
Point Defects ◽  
Molecular Beam

Electron Paramagnetic Resonance Study of Low Temperature Molecular Beam Epitaxy Grown GaAs and InP Layers

1991 ◽  
Vol 241 ◽  
Author(s):  
H. J. von Bardeleben ◽  
Y. Q. Jia ◽  
J. P. Hirtz ◽  
J. C. Garcia ◽  
M. O. Manasreh ◽  
...  
Keyword(s):  
Electron Paramagnetic Resonance ◽  
Molecular Beam Epitaxy ◽  
Low Temperature ◽  
Molecular Beam ◽  
Electron Paramagnetic Resonance Study ◽  
Paramagnetic Resonance ◽  
Native Defects ◽  
Antisite Defects ◽  
High Concentrations ◽  
Electron Paramagnetic

ABSTRACTThe native defects in LTMBE III-V layers have been studied by the electron paramagnetic resonance (EPR) technique for three different systems: GaAs on GaAs, GaAs on Si and InP on InP. The GaAs layers are characterised by high concentrations of ionized arsenic antisite defects(1019 cm −3), with properties similar to those of the native AsGa in amorphous GaAs. Their variation with the growth temperature, layer thickness and thermal annealings has been assessed.The results are independant on the nature of the substrate, GaAs or Si. Inspite of a 1% phosphorous excess no phosphorous antisites could be detected in the as-grown, undoped or Be doped InP layers.

Influence of Antimony Doping on Nanoscale Arsenic Clusters and Dislocation Loops in Low-Temperature Grown Gallium Arsenide Films

2000 ◽  
Vol 652 ◽  
Author(s):  
V.V. Chaldyshev ◽  
N.A. Bert ◽  
A.E. Romanov ◽  
A.A. Suvorova ◽  
A.L. Kolesnikova ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Low Temperature ◽  
Molecular Beam ◽  
Dislocation Loops ◽  
Gaas Matrix ◽  
Transmission Electron ◽  
Antimony Doping ◽  
Gaas Films ◽  
Sb Doping ◽  
Ripening Rate

ABSTRACTTransmission electron microscopy was employed to study the microstructure of GaAs films grown by molecular-beam epitaxy at low temperature and delta-doped with Sb. Thus obtained material contained 0.5 at.% of excess arsenic that precipitates upon post-growth anneals. The Sb doping was found to strongly affect the microstructure of arsenic clusters and their ripening rate upon annealing. Segregation of Sb impurities in the As clusters was revealed. In contrast to the well known pure As clusters, the As-Sb clusters induced strong local deformations in the surrounding GaAs matrix. Relaxation of these deformations resulted in formation of dislocation loops, which was studied both experimentally and theoretically.

Reduction of Point Defects and Formation of Abrupt Hetero-Interfaces in Low-Temperature Molecular Beam Epitaxy of GaAs and GaP under Atomic Hydrogen Irradiation

1998 ◽  
Vol 37 (Part 1, No. 9A) ◽  
pp. 4726-4731 ◽  
Author(s):  
Mikihiro Yokozeki ◽  
Hiroo Yonezu ◽  
Takuto Tsuji ◽  
Kazuya Aizawa ◽  
Naoki Ohshima
Keyword(s):  
Molecular Beam Epitaxy ◽  
Low Temperature ◽  
Point Defects ◽  
Atomic Hydrogen ◽  
Molecular Beam

Distribution of point defects in Si(100)/Si grown by low-temperature molecular-beam epitaxy and solid-phase epitaxy

1993 ◽  
Vol 48 (8) ◽  
pp. 5345-5353 ◽  
Author(s):  
P. Asoka-Kumar ◽  
H.-J. Gossmann ◽  
F. C. Unterwald ◽  
L. C. Feldman ◽  
T. C. Leung ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Low Temperature ◽  
Point Defects ◽  
Molecular Beam ◽  
Solid Phase ◽  
Solid Phase Epitaxy
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