Control of point defects and arsenic clusters in low-temperature grown GaAs by isovalent impurity doping

2002 ◽  
Author(s):  
V.V. Chaldyshev ◽  
N.A. Bert ◽  
N.N. Faleev ◽  
A.E. Kunitsyn ◽  
Yu.G. Musikhin ◽  
...  
Keyword(s):  
Low Temperature ◽  
Point Defects ◽  
Impurity Doping ◽  
Low Temperature Grown Gaas

Native point defects in low‐temperature‐grown GaAs

1995 ◽  
Vol 67 (2) ◽  
pp. 279-281 ◽  
Author(s):  
X. Liu ◽  
A. Prasad ◽  
J. Nishio ◽  
E. R. Weber ◽  
Z. Liliental‐Weber ◽  
...  
Keyword(s):  
Low Temperature ◽  
Point Defects ◽  
Native Point Defects ◽  
Low Temperature Grown Gaas

Influence Of Donor, Acceptor, And Isovalent Impurity Doping On Arsenic Excess And Point Defects In Low Temperature Grown GaAs

1996 ◽  
Vol 442 ◽  
Author(s):  
V. V. Chaldyshev ◽  
A. E. Kunitsyn ◽  
N. N. Faleev ◽  
V. V. Preobrazhenskii ◽  
M. A. Putyato ◽  
...  
Keyword(s):  
Low Temperature ◽  
Point Defects ◽  
Molecular Beam ◽  
Acceptor Doping ◽  
Gallium Vacancy ◽  
Gaas Films ◽  
Impurity Doping ◽  
Donor Acceptor ◽  
Antisite Defects ◽  
Free Material

AbstractWe show that in contrast to Si donor and Be acceptor doping, isovalent In impurity doping enhances arsenic excess in the GaAs films grown by molecular beam epitaxy at low temperature. This effect is due to an increase in the concentration of arsenic antisite defects. Gallium vacancy related defects are detected only in the samples annealed at high temperature. Their concentration is found to be higher in the indium-free material than in the indium doped one

The role of point defects and arsenic precipitates in carrier trapping and recombination in low‐temperature grown GaAs

1996 ◽  
Vol 69 (10) ◽  
pp. 1465-1467 ◽  
Author(s):  
A. J. Lochtefeld ◽  
M. R. Melloch ◽  
J. C. P. Chang ◽  
E. S. Harmon
Keyword(s):  
Low Temperature ◽  
Point Defects ◽  
Carrier Trapping ◽  
Low Temperature Grown Gaas

Ultrafast photoconductors from low-temperature-grown GaAs for terahertz components activated by femtosecond 1-μm wavelength laser pulses

2012 ◽  
Vol 9 (7) ◽  
pp. 1693-1695
Author(s):  
Juozas Adamonis ◽  
Klemensas Bertulis ◽  
Andrius Bičiūnas ◽  
Ramūnas Adomavičius ◽  
Arūnas Krotkus
Keyword(s):  
Low Temperature ◽  
Laser Pulses ◽  
Low Temperature Grown Gaas

Interaction of localized spins in low-temperature-grown GaAs layers

2010 ◽  
Vol 405 (19) ◽  
pp. 4133-4138 ◽  
Author(s):  
D.W. Jung ◽  
J.P. Noh ◽  
N. Otsuka
Keyword(s):  
Low Temperature ◽  
Low Temperature Grown Gaas
Sign in / Sign up

Export Citation Format

Share Document