scholarly journals Characterization of deep level defects in thermally annealed Fe‐doped semi‐insulating InP by photoinduced current transient spectroscopy

1992 ◽  
Vol 61 (21) ◽  
pp. 2583-2585 ◽  
Author(s):  
A. Kalboussi ◽  
G. Marrakchi ◽  
G. Guillot ◽  
K. Kainosho ◽  
O. Oda
2001 ◽  
Vol 89 (2) ◽  
pp. 1172-1174 ◽  
Author(s):  
V. V. Ilchenko ◽  
S. D. Lin ◽  
C. P. Lee ◽  
O. V. Tretyak

1996 ◽  
Vol 442 ◽  
Author(s):  
K. Leosson ◽  
H. P. Gislason

AbstractWe present investigations on the two dominating acceptor levels observed in Cu-diffused GaAs which have frequently been attributed to the two ionization levels of a double CuGa acceptor. We employed plasma hydrogenation and lithium diffusion followed by reverse-bias and zero-bias annealing to passivate and subsequently reactivate the Cu-related acceptor levels. Deep-level current-transient spectroscopy measurements reveal that the two levels are independently reactivated, strongly indicating that they arise from different defects.


2011 ◽  
Vol 109 (6) ◽  
pp. 064514 ◽  
Author(s):  
A. F. Basile ◽  
J. Rozen ◽  
J. R. Williams ◽  
L. C. Feldman ◽  
P. M. Mooney

2017 ◽  
Vol 64 (5) ◽  
pp. 2135-2141 ◽  
Author(s):  
Agostino Benvegnu ◽  
Sylvain Laurent ◽  
Olivier Jardel ◽  
Jean-Luc Muraro ◽  
Matteo Meneghini ◽  
...  

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