Detection sensitivity and spatial resolution of reverse‐bias pulsed deep‐level transient spectroscopy for studying electric field‐enhanced carrier emission

1985 ◽  
Vol 57 (4) ◽  
pp. 1016-1021 ◽  
Author(s):  
G. P. Li ◽  
K. L. Wang
Keyword(s):  
Electric Field ◽  
Spatial Resolution ◽  
Deep Level Transient Spectroscopy ◽  
Reverse Bias ◽  
Deep Level ◽  
Detection Sensitivity ◽  
Transient Spectroscopy

Z1/2- and EH6-Center in 4H-SiC: Not Identical Defects ?

2012 ◽  
Vol 717-720 ◽  
pp. 251-254 ◽  
Author(s):  
Bernd Zippelius ◽  
Alexander Glas ◽  
Heiko B. Weber ◽  
Gerhard Pensl ◽  
Tsunenobu Kimoto ◽  
...  
Keyword(s):  
Activation Energy ◽  
Electric Field ◽  
Deep Level Transient Spectroscopy ◽  
Deep Level ◽  
Schottky Contacts ◽  
Double Peak ◽  
Carbon Vacancy ◽  
High Concentrations ◽  
Transient Spectroscopy ◽  
Dlts Spectra

Deep Level Transient Spectroscopy (DLTS) and Double-correlated DLTS (DDLTS) measurements have been conducted on Schottky contacts fabricated on n-type 4H-SiC epilayers using different contact metals in order to separate the EH6- and EH7-centers, which usually appear as a broad double peak in DLTS spectra. The activation energy of EH6(EC- ET(EH6) = 1.203 eV) turns out to be independent of the electric field. As a consequence, EH6is acceptor-like according to the missing Poole-Frenkel effect. Therefore, it can be excluded that the EH6-center and the prominent acceptor-like Z1/2-center belong to different charge states of the same microscopic defect as theoretically suggested. It is proposed that EH6is a complex containing a carbon vacancy and another component available at high concentrations. The activation energy of EH7(EC- ET(EH7) = 1.58 eV) has been evaluated indirectly by fitting the DLTS spectra of the EH6/7double peak taking the previously determined parameters of EH6into account.

The Influence of an In-Situ Electric Field on H+ and He+ Implantation Induced Defects in Silicon

1993 ◽  
Vol 316 ◽  
Author(s):  
J. Ravi ◽  
Yu. Erokhin ◽  
S. Koveshnikov ◽  
G.A. Rozgonyi ◽  
C.W. White
Keyword(s):  
Electric Field ◽  
Deep Level Transient Spectroscopy ◽  
Deep Level ◽  
Spectroscopy Technique ◽  
Deep Traps ◽  
Observed Behaviour ◽  
Proton Implantation ◽  
Transient Spectroscopy ◽  
Induced Defects

ABSTRACTThe influence of in-situ electronic perturbations on defect generation during 150 keV proton implantation into biased silicon p-n junctions has been investigated. The concentration and spatial distribution of the deep traps were characterized using a modification of the double corelation deep level transient spectroscopy technique (D-DLTS). With the in-situ electric field applied, a decrease in concentration of vacancy-related, as well as H-related, traps was observed. 500 keV He+ implantation was also performed to supplement the above studies and to differentiate any passivation effects due to hydrogen. A model based on the charge states of hydrogen and vacancies was used to explain the observed behaviour.

Impact of Electric Field on Thermoemission of Carriers from Shallow Dislocation-Related Electronic States

2013 ◽  
Vol 205-206 ◽  
pp. 299-304 ◽  
Author(s):  
M. Trushin ◽  
Oleg F. Vyvenko
Keyword(s):  
Experimental Data ◽  
Activation Energy ◽  
Electric Field ◽  
Deep Level Transient Spectroscopy ◽  
Deep Level ◽  
Dislocation Line ◽  
Electronic States ◽  
Energy Reduction ◽  
Transient Spectroscopy ◽  
Internal Charge

Shallow dislocation-related electronic states near the bottom of the conduction band in n-type Si bonded sample have been investigated with deep-level transient spectroscopy (DLTS), isothermal transient spectroscopy (ITS) and energy-resolved DLTS. The effect of thermoemission (TE) enhancement in external electric field was found and the dependence of the TE activation energy reduction as a function of the filling grade was obtained for these states. A new model of dislocation-strain-related Poole-Frenkel effect that accounts for the own electric field of internal charge of dislocation line is suggested and compared with the experimental data.

scholarly journals Electron and Hole Trap Signal with Similar Defect Parameters in Chalcopyrite Based Solar Cells

2009 ◽  
Vol 64 (9-10) ◽  
pp. 658-664
Author(s):  
Verena Mertens ◽  
Rolf Reineke-Koch ◽  
Jürgen Parisi
Keyword(s):  
Solar Cells ◽  
Deep Level Transient Spectroscopy ◽  
Reverse Bias ◽  
Minority Carrier ◽  
Deep Level ◽  
Admittance Spectroscopy ◽  
Bias Level ◽  
Copper Chalcopyrite ◽  
Transient Spectroscopy ◽  
Experimental Findings

Copper chalcopyrite based solar cells with different molar gallium to gallium plus indium ratio (GGI) are looked at, using deep level transient spectroscopy (DLTS) and admittance spectroscopy (AS). Depending on the respective measurement parameters, like reverse bias level, height and length of the voltage pulse applied, either a minority carrier or/and a majority carrier deep level signal is/are detected in the temperature range below 200 K. The AS investigations reveal only one trap signal. After a detailed description of the defect properties taking advantage of the two diode model, we discuss the origin of these trap signals in view of our experimental findings

scholarly journals Effect of the Schottky Barrier Height on the Detection of Midgap Levels in 4H-SiC by Deep Level Transient Spectroscopy

2008 ◽  
Vol 600-603 ◽  
pp. 417-420 ◽  
Author(s):  
Sergey A. Reshanov ◽  
Gerhard Pensl ◽  
Katsunori Danno ◽  
Tsunenobu Kimoto ◽  
Shigeomi Hishiki ◽  
...  
Keyword(s):  
Schottky Barrier ◽  
Barrier Height ◽  
Space Charge Region ◽  
Deep Level Transient Spectroscopy ◽  
Reverse Bias ◽  
Schottky Barrier Height ◽  
Deep Level ◽  
Peak Height ◽  
Quasi Fermi Level ◽  
Transient Spectroscopy

The effect of the Schottky barrier height on the detection of the midgap defects EH6 and EH7 in 4H-SiC by deep level transient spectroscopy (DLTS) is systematically studied. The results show that the DLTS peak height - and as a consequence the observed defect concentration - increases with the increasing barrier height and saturates above 1.5 eV for EH6 and above 1.7 eV for EH7, while below 1.1 eV the DLTS peak height completely disappears. A model is applied, which determines the position of the quasi-Fermi level in the space charge region as a function of the barrier height and of the reverse bias applied and which explains the variation of the DLTS peak height.

Persistent Photoconductivity And Thermal Recovery Kinetics Of Low Energy Ar + Bombarded GaAs

1991 ◽  
Vol 223 ◽  
Author(s):  
A. Vaseashta ◽  
L. C. Burton
Keyword(s):  
Deep Level Transient Spectroscopy ◽  
Deep Level ◽  
Thermal Recovery ◽  
Low Energy ◽  
Persistent Photoconductivity ◽  
Transport Parameters ◽  
Excellent Correlation ◽  
Proposed Model ◽  
Transient Spectroscopy ◽  
Kinetics Of

ABSTRACTKinetics of persistent photoconductivity, photoquenching, and thermal and optical recovery observed in low energy Ar+ bombarded on (100) GaAs surfaces have been investigated. Rate and transport equations for these processes were derived and simulated employing transport parameters, trap locations and densities determined by deep level transient spectroscopy. Excellent correlation was obtained between the results of preliminary simulation and the experimentally observed values. The exponential decay of persistent photoconductivity response curve was determined to be due to metastable electron traps with longer lifetime and is consistent with an earlier proposed model.

Deep level study in epitaxial 4H-SiC grown on substrates inclined toward

2002 ◽  
Vol 719 ◽  
Author(s):  
Masashi Kato ◽  
Masaya Ichimura ◽  
Eisuke Arai ◽  
Shigehiro Nishino
Keyword(s):  
Deep Level Transient Spectroscopy ◽  
Deep Level ◽  
Activation Energies ◽  
Thickness Dependence ◽  
Epitaxial Layers ◽  
Transient Spectroscopy

AbstractEpitaxial layers of 4H-SiC are grown on (0001) substrates inclined toward <1120> and <1100> directions. Defects in these films are characterized by deep level transient spectroscopy (DLTS) in order to clarify the dependence of concentrations and activation energies on substrate inclination. DLTS results show no such dependence on substrate inclination but show thickness dependence of the concentration.

Two-Dimensional Local Deep-Level Transient Spectroscopy Imaging Using Super-Higher-Order Scanning Nonlinear Dielectric Microscopy

2016 ◽  
Author(s):  
N. Chinone ◽  
Y. Cho ◽  
R. Kosugi ◽  
Y. Tanaka ◽  
S. Harada ◽  
...  
Keyword(s):  
Deep Level Transient Spectroscopy ◽  
Deep Level ◽  
Higher Order ◽  
Trap Density ◽  
New Technique ◽  
Two Dimensional ◽  
Nonlinear Dielectric ◽  
Annealing Conditions ◽  
Transient Spectroscopy ◽  
A New Technique

Abstract A new technique for local deep level transient spectroscopy (DLTS) imaging using super-higher-order scanning nonlinear dielectric microscopy is proposed. Using this technique. SiCVSiC structure samples with different post oxidation annealing conditions were measured. We observed that the local DLTS signal decreases with post oxidation annealing (POA), which agrees with the well-known phenomena that POA reduces trap density. Furthermore, obtained local DLTS images had dark and bright areas, which is considered to show the trap distribution at/near SiCVSiC interface.

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