Impact of Chemical and Epitaxial Treatment on Surface Defects on Silicon Wafers

1996 ◽  
Vol 442 ◽  
Author(s):  
R. Schmolke ◽  
D. Gräf ◽  
M. Suhren ◽  
R. Kirchner ◽  
H. Piontek ◽  
...  
Keyword(s):  
Surface Defects ◽  
Silicon Wafers ◽  
Effective Measure ◽  
Atomic Force ◽  
Or Groups ◽  
Surface Flaws ◽  
Inspection Systems ◽  
Defect Dimension ◽  
Average Size ◽  
Lateral Defect

AbstractDefects on polished as well as hot SC1 treated silicon wafers were investigated with an Atomic Force Microscope (AFM) and Surface Scanning Inspection Systems (SSIS). Measurement with two SSIS of different type allows to identify most of the surface defects as non particulate scatterers. AFM of these defects reveals tiny pits or groups of pits. An almost linear relation is found between the geometrical lateral defect dimension and their average size in units of LSE (Latex Sphere Equivalent; an effective measure for the scattering cross section) as reported by one of the SSIS for the defects on wafers treated with hot SC1. Growth rates of about 40 nmLSE/h are observed for the defects during subsequent treatments of wafers with hot SC1. The LSE-size distribution of as-grown defects with a peak at about 105 and 110 nmLSE is obtained for two types of wafer by modeling the defect evolution during hot SC1 treatment. The number of surface flaws ≥ 0.12 μmLSE on a substrate is reduced by two orders of magnitude for epitaxial layers as thin as 1.5 μm.

scholarly journals Study the Effect of Water Content on the Structure of Electrochemically Prepared TiO2 Nanotubes

2022 ◽  
Author(s):  
Sara Al-Waisawy ◽  
Ahmed Kareem Abdullah ◽  
Hadi A. Hamed ◽  
Ali A. Al-bakri
Keyword(s):  
Water Content ◽  
Pure Titanium ◽  
Electrochemical Anodization ◽  
X Ray Diffraction ◽  
Force Microscopy ◽  
Atomic Force ◽  
Titania Nanotube Arrays ◽  
Anodization Process ◽  
Titania Films ◽  
Average Size

In this research, the pure titanium foil was treated in glycerol base electrolyte with 0.7 wt.% NH4F and a small amount of H2O at 17 V for 2 hours by electrochemical anodization process in order to prepare Titania nanotube arrays at room temperature (~25 ºC), different water content was added to the electrolyte as a tube enhancing agent. The high density uniform arrays are prepared by using organized and well aligned these tubes. The average size of tube diameter, ranging from 57 to 92 nm which found it increases with increasing water content, and the length of the tube ranging from 2.76 to 4.12 µm, also found to increase with increasing water content and ranging in size of wall thickness from 23 to 35 nm. A possible growth mechanism is presented. The X-ray diffraction (XRD), atomic force microscopy (AFM), and scanning electron microscopy (SEM) were utilized to study the structure and morphology of the Titania films.

scholarly journals Atomic force microscopy of a ctpA mutant in Rhizobium leguminosarum reveals surface defects linking CtpA function to biofilm formation

Microbiology ◽  
2011 ◽  
Vol 157 (11) ◽  
pp. 3049-3058 ◽  
Author(s):  
Jun Dong ◽  
Karla S. L. Signo ◽  
Elizabeth M. Vanderlinde ◽  
Christopher K. Yost ◽  
Tanya E. S. Dahms
Keyword(s):  
Atomic Force Microscopy ◽  
Mutant Strain ◽  
Biofilm Formation ◽  
Rhizobium Leguminosarum ◽  
Surface Defects ◽  
Ion Concentration ◽  
Adhesive Properties ◽  
Surface Ultrastructure ◽  
Force Microscopy ◽  
Atomic Force

Atomic force microscopy was used to investigate the surface ultrastructure, adhesive properties and biofilm formation of Rhizobium leguminosarum and a ctpA mutant strain. The surface ultrastructure of wild-type R. leguminosarum consists of tightly packed surface subunits, whereas the ctpA mutant has much larger subunits with loose lateral packing. The ctpA mutant strain is not capable of developing fully mature biofilms, consistent with its altered surface ultrastructure, greater roughness and stronger adhesion to hydrophilic surfaces. For both strains, surface roughness and adhesive forces increased as a function of calcium ion concentration, and for each, biofilms were thicker at higher calcium concentrations.

Measurement of surface defects on thin steel wires by atomic force microscopy

1999 ◽  
Vol 150 (1-4) ◽  
pp. 125-130 ◽  
Author(s):  
L.M Sánchez-Brea ◽  
J.A Gómez-Pedrero ◽  
E Bernabeu
Keyword(s):  
Atomic Force Microscopy ◽  
Surface Defects ◽  
Force Microscopy ◽  
Atomic Force ◽  
Steel Wires ◽  
Thin Steel

Generation and Structural Analysis of Silicon Nanoparticles

1994 ◽  
Vol 358 ◽  
Author(s):  
Ping Li ◽  
Klaus Sattler
Keyword(s):  
Structural Analysis ◽  
Atomic Force Microscope ◽  
Silicon Nanoparticles ◽  
Pyrolytic Graphite ◽  
Silicon Wafers ◽  
Silicon Substrates ◽  
Size Distributions ◽  
Particle Interactions ◽  
Atomic Force ◽  
Silicon Vapor

ABSTRACTWe have generated 20 to 100 nm sized silicon nanoparticles and analyzed their morphologies using an atomic force microscope (AFM). The particles are formed by deposition of silicon vapor onto silicon wafers and highly oriented pyrolytic graphite (HOPG). On silicon substrates, the particles are close to spherical with relatively narrow size distributions and they are randomly located. On graphite substrates the particles are arranged in chains. Within the chains they show strong deformations in the contact areas. We relate this to covalent inter-particle interactions.

Excitons bound to surface defects in GaN

2002 ◽  
Vol 743 ◽  
Author(s):  
M. A. Reshchikov ◽  
D. Huang ◽  
H. Morkoç
Keyword(s):  
Low Temperature ◽  
Surface Defects ◽  
Acceptor Pair ◽  
Force Microscopy ◽  
Uv Illumination ◽  
Atomic Force ◽  
Subsequent Exposure ◽  
Donor Acceptor ◽  
And Inversion ◽  
Microscopy Images

ABSTRACTSharp intense peaks are sometimes detected in the low-temperature photoluminescence (PL) spectrum of undoped GaN samples in the photon energy range of 3.0 – 3.46 eV. Some of these peaks can be attributed to excitons bound to dislocations and inversion domains, whereas some others originate from the GaN surface because they can be affected essentially by surface treatment. In our samples, grown by molecular beam epitaxy on sapphire substrate, the 3.42 eV peak always disappeared after removing the surface layer by etching for a few seconds in hot phosphoric acid. Atomic force microscopy images confirmed that such light etching modifies the surface morphology, although the etched depth is negligibly small. Moreover, intensities of two other peaks (at 3.32 and 3.35 eV) were observed to depend on sample etching, as well as on the length of subsequent exposure to air. The 3.32 and 3.35 eV peaks evolved with time of UV illumination, increasing by several times and demonstrating memory effect at low temperature. We attribute the 3.42 and 3.35 eV peaks to bound excitons, whereas the 3.32 eV peak is tentatively attributed to a surface donor-acceptor pair transition.

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