Correlation of Hydrate-Film Growth Rate at the Guest/Liquid-Water Interface to Mass Transfer Resistance

2010 ◽  
Vol 49 (15) ◽  
pp. 7102-7103 ◽  
Author(s):  
Kota Saito ◽  
Amadeu K. Sum ◽  
Ryo Ohmura
Keyword(s):  
Mass Transfer ◽  
Growth Rate ◽  
Liquid Water ◽  
Film Growth ◽  
Water Interface ◽  
Mass Transfer Resistance ◽  
Transfer Resistance ◽  
Film Growth Rate ◽  
Hydrate Film

scholarly journals Reduction of Clathrate Hydrate Film Growth Rate by Naturally Occurring Surface Active Components

2017 ◽  
Vol 31 (6) ◽  
pp. 5798-5805 ◽  
Author(s):  
Shane A. Morrissy ◽  
Angus J. McKenzie ◽  
Brendan F. Graham ◽  
Michael L. Johns ◽  
Eric F. May ◽  
...  
Keyword(s):  
Growth Rate ◽  
Film Growth ◽  
Clathrate Hydrate ◽  
Active Components ◽  
Film Growth Rate ◽  
Naturally Occurring ◽  
Hydrate Film ◽  
Surface Active

scholarly journals Properties and Mechanism of PEALD-In2O3 Thin Films Prepared by Different Precursor Reaction Energy

Nanomaterials ◽  
2021 ◽  
Vol 11 (4) ◽  
pp. 978
Author(s):  
Ming-Jie Zhao ◽  
Zhi-Xuan Zhang ◽  
Chia-Hsun Hsu ◽  
Xiao-Ying Zhang ◽  
Wan-Yu Wu ◽  
...  
Keyword(s):  
Growth Rate ◽  
Substrate Temperature ◽  
Film Growth ◽  
Atomic Layer ◽  
Amorphous Structure ◽  
Reaction Energy ◽  
Film Growth Rate ◽  
In2o3 Film ◽  
Intermediate Temperature Range ◽  
Layer Deposition

Indium oxide (In2O3) film has excellent optical and electrical properties, which makes it useful for a multitude of applications. The preparation of In2O3 film via atomic layer deposition (ALD) method remains an issue as most of the available In-precursors are inactive and thermally unstable. In this work, In2O3 film was prepared by ALD using a remote O2 plasma as oxidant, which provides highly reactive oxygen radicals, and hence significantly enhancing the film growth. The substrate temperature that determines the adsorption state on the substrate and reaction energy of the precursor was investigated. At low substrate temperature (100–150 °C), the ratio of chemically adsorbed precursors is low, leading to a low growth rate and amorphous structure of the films. An amorphous-to-crystalline transition was observed at 150–200 °C. An ALD window with self-limiting reaction and a reasonable film growth rate was observed in the intermediate temperature range of 225–275 °C. At high substrate temperature (300–350 °C), the film growth rate further increases due to the decomposition of the precursors. The resulting film exhibits a rough surface which consists of coarse grains and obvious grain boundaries. The growth mode and properties of the In2O3 films prepared by plasma-enhanced ALD can be efficiently tuned by varying the substrate temperature.

scholarly journals Effect of Voltage Pulse Width and Synchronized Substrate Bias in High-Power Impulse Magnetron Sputtering of Zirconium Films

Coatings ◽  
2020 ◽  
Vol 11 (1) ◽  
pp. 7
Author(s):  
Chin-Chiuan Kuo ◽  
Chun-Hui Lin ◽  
Jing-Tang Chang ◽  
Yu-Tse Lin
Keyword(s):  
Growth Rate ◽  
Magnetron Sputtering ◽  
High Power ◽  
Pulse Width ◽  
Film Growth ◽  
Highly Charged Ions ◽  
Argon Pressure ◽  
Hexagonal Prism ◽  
Film Growth Rate ◽  
Charged Ions

The Zr film microstructure is highly influenced by the energy of the plasma species during the deposition process. The influences of the discharge pulse width, which is the key factor affecting ionization of sputtered species in the high-power impulse magnetron sputtering (HiPIMS) process, on the obtained microstructure of films is investigated in this research. The films deposited at different argon pressure and substrate biasing are compared. With keeping the same average HiPIMS power and duty cycle, the film growth rate of the Zr film decreases with increasing argon pressure and enhancing substrate biasing. In addition, the film growth rate decreases with the elongating HiPIMS pulse width. For the deposition at 1.2 Pa argon, extending the pulse width not only intensifies the ion flux toward the substrate but also increases the fraction of highly charged ions, which alter the microstructure of films from individual hexagonal prism columns into a tightly connected irregular column. Increasing film density leads to higher hardness. Sufficient synchronized negative substrate biasing and longer pulse width, which supports higher mobility of adatoms, causes the preferred orientation of hexagonal α-phase Zr films from (0 0 0 2) to (1 0 1¯ 1). Unlike the deposition at 1.2 Pa, highly charged ions are also found during the short HiPIMS pulse width at 0.8 Pa argon.

Analysis of Heat and Mass Transfer Between a Desiccant-Air System in a Packed Tower

1987 ◽  
Vol 109 (2) ◽  
pp. 89-93 ◽  
Author(s):  
P. Gandhidasan ◽  
M. Rifat Ullah ◽  
C. F. Kettleborough
Keyword(s):  
Mass Transfer ◽  
Gas Phase ◽  
Heat And Mass Transfer ◽  
Packing Material ◽  
Mass Transfer Resistance ◽  
Liquid Desiccant ◽  
Governing Equations ◽  
Packed Tower ◽  
Transfer Resistance ◽  
Steady State Model

Heat and mass transfer analysis between a desiccant-air contact system in a packed tower has been studied in application to air dehumidification employing liquid desiccant, namely calcium chloride. Ceramic 2 in. Raschig rings are used as the packing material. To predict the tower performance, a steady-state model which considers the heat and mass transfer resistances of the gas phase and the mass transfer resistance of the liquid phase is developed. The governing equations are solved on a digital computer to simulate the performance of the tower. The various parameters such as the effect of liquid concentration and temperature, air temperature and humidity and the rates of flow of air and liquid affecting the tower performance have been discussed.

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