Van Der Waals Epitaxy of Transition Metal Dichalcogenides Using Metal Organic Precursors (Movdwe)

1996 ◽  
Vol 441 ◽  
Author(s):  
S. Tiefenbacher ◽  
C. Pettenkofer ◽  
W. Jaegermann
Keyword(s):  
Transition Metal ◽  
Lattice Mismatch ◽  
Van Der Waals ◽  
Transition Metal Dichalcogenides ◽  
Intensity Variation ◽  
High Crystalline Quality ◽  
Metal Dichalcogenides ◽  
Metal Organic ◽  
Organic Precursors ◽  
First Time

AbstractEpitaxial WS2 films have been grown on MoTe2 (0001) van der Waals faces using W(CO)6 and SnS2 as precursors. Despite a lattice mismatch of 10.3 % the film shows high crystalline quality. The interface is atomically abrupt and shows no interface dangling bonds as deduced from photoemission results (XPS, UPS). The growing overlayer nucleates on the flat (0001) terraces and not on steps as suggested from STM-measurements. For thin epilayers Moiré superstructures in LEED have been measured for the first time in semiconductor heteroepitaxy. From the intensity variation of the LEED spots with energy a corrugation of the overlayer film can be deduced. Based on these results a mechanism of van der Waals epitaxy is suggested.

Theoretical characterization of the electronic properties of heterogeneous vertical stacks of 2D metal dichalcogenides containing one doped layer

2020 ◽  
Vol 22 (25) ◽  
pp. 14088-14098
Author(s):  
Amine Slassi ◽  
David Cornil ◽  
Jérôme Cornil
Keyword(s):  
Transition Metal ◽  
Electronic Properties ◽  
Van Der Waals ◽  
Transition Metal Dichalcogenides ◽  
Optoelectronic Devices ◽  
Metal Dichalcogenides ◽  
Theoretical Characterization ◽  
New Generation

The rise of van der Waals hetero-structures based on transition metal dichalcogenides (TMDs) opens the door to a new generation of optoelectronic devices.

scholarly journals Chalcogenide van der Waals superlattices: a case example of interfacial phase-change memory

2019 ◽  
Vol 91 (11) ◽  
pp. 1777-1786 ◽  
Author(s):  
Yuta Saito ◽  
Paul Fons ◽  
Kirill V. Mitrofanov ◽  
Kotaro Makino ◽  
Junji Tominaga ◽  
...  
Keyword(s):  
Transition Metal ◽  
Phase Change ◽  
Topological Insulators ◽  
Van Der Waals ◽  
Transition Metal Dichalcogenides ◽  
Phase Change Memory ◽  
Interfacial Phase ◽  
Metal Dichalcogenides ◽  
Superlattice Structures ◽  
Change Memory

Abstract 2D van der Waals chalcogenides such as topological insulators and transition-metal dichalcogenides and their heterostructures are now at the forefront of semiconductor research. In this paper, we discuss the fundamental features and advantages of van der Waals bonded superlattices over conventional superlattices made of 3D materials and describe in more detail one practical example, namely, interfacial phase change memory based on GeTe–Sb2Te3 superlattice structures.

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