Atomic Force Microscopy Study of Hard Coating Films Prepared by Pulsed Laser Deposition Method

1996 ◽  
Vol 441 ◽  
Author(s):  
Hsieh-Li Chan ◽  
Ashok Kumar ◽  
L. Sanderson ◽  
J. J. Weimer
Keyword(s):  
Thin Film ◽  
Atomic Force Microscopy ◽  
Pulsed Laser Deposition ◽  
Room Temperature ◽  
High Vacuum ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Force Microscopy ◽  
Atomic Force ◽  
Different Temperatures

AbstractAluminum nitride (AIN), silicon nitride (Si3N4), and silicon carbide (SIC) thin films have been snthesized using pulsed laser deposition (PLD) techniques. AIN and Si3N4 films were deposited on Si (100) substrates at different temperatures (room temperature to 600°C) and partial pressures (15 mTorr N2 to 200 mTorr N2). SiC films were deposited on Si (100) substrates at different temperatures (room temperature to 400°C) in high vacuum. The atomic force microscopy (AFM) is a useful tool for studying the surface topography of these technologically interesting thin film surfaces. This paper discusses in detail AFM analysis of thin film coatings.

scholarly journals Combined pulsed laser deposition and non-contact atomic force microscopy system for studies of insulator metal oxide thin films

2018 ◽  
Vol 9 ◽  
pp. 686-692 ◽  
Author(s):  
Daiki Katsube ◽  
Hayato Yamashita ◽  
Satoshi Abo ◽  
Masayuki Abe
Keyword(s):  
Thin Films ◽  
Atomic Force Microscopy ◽  
Metal Oxide ◽  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Film Surface ◽  
Laser Deposition ◽  
Combined System ◽  
Force Microscopy ◽  
Atomic Force

We have designed and developed a combined system of pulsed laser deposition (PLD) and non-contact atomic force microscopy (NC-AFM) for observations of insulator metal oxide surfaces. With this system, the long-period iterations of sputtering and annealing used in conventional methods for preparing a metal oxide film surface are not required. The performance of the combined system is demonstrated for the preparation and high-resolution NC-AFM imaging of atomically flat thin films of anatase TiO2(001) and LaAlO3(100).

Observation of the effects of Bi-deficiency on ferroelectric and electrical properties in Bi(1+x)FeO3/La0.65Sr0.35MnO3 heterostructures via atomic force microscopy

RSC Advances ◽  
2016 ◽  
Vol 6 (116) ◽  
pp. 115039-115045 ◽  
Author(s):  
Qing Liu ◽  
Jieling Zhang ◽  
Ling Wei ◽  
Weifeng Zhang
Keyword(s):  
Thin Films ◽  
Atomic Force Microscopy ◽  
Electrical Properties ◽  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Force Microscopy ◽  
Atomic Force

Bi(1+x)FeO3 thin films with different Bi contents (x = 0%, 5%, and 10%) were grown on (001) SrTiO3 substrates with La0.65Sr0.35MnO3 (LSMO) buffered layers via pulsed laser deposition.

scholarly journals Imaging pulsed laser deposition oxide growth by in situ atomic force microscopy

2017 ◽  
Vol 88 (12) ◽  
pp. 123902 ◽  
Author(s):  
W. A. Wessels ◽  
T. R. J. Bollmann ◽  
D. Post ◽  
G. Koster ◽  
G. Rijnders
Keyword(s):  
Atomic Force Microscopy ◽  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Oxide Growth ◽  
Force Microscopy ◽  
Atomic Force

scholarly journals Annealing Condition Effects on the Structural Properties of FePt Nanoparticles Embedded in MgO via Pulsed Laser Deposition

Nanomaterials ◽  
2021 ◽  
Vol 11 (1) ◽  
pp. 131
Author(s):  
Tingting Xiao ◽  
Qi Yang ◽  
Jian Yu ◽  
Zhengwei Xiong ◽  
Weidong Wu
Keyword(s):  
Pulsed Laser Deposition ◽  
Room Temperature ◽  
High Vacuum ◽  
Pulsed Laser ◽  
Annealing Process ◽  
Ultra High Vacuum ◽  
Laser Deposition ◽  
Fept Nanoparticles ◽  
Annealing Conditions ◽  
Vacuum Atmosphere

FePt nanoparticles (NPs) were embedded into a single-crystal MgO host by pulsed laser deposition (PLD). It was found that its phase, microstructures and physical properties were strongly dependent on annealing conditions. Annealing induced a remarkable morphology variation in order to decrease its total free energy. H2/Ar (95% Ar + 5% H2) significantly improved the L10 ordering of FePt NPs, making magnetic coercivity reach 37 KOe at room temperature. However, the samples annealing at H2/Ar, O2, and vacuum all showed the presence of iron oxide even with the coverage of MgO. MgO matrix could restrain the particles’ coalescence effectively but can hardly avoid the oxidation of Fe since it is extremely sensitive to oxygen under the high-temperature annealing process. This study demonstrated that it is essential to anneal FePt in a high-purity reducing or ultra-high vacuum atmosphere in order to eliminate the influence of oxygen.

Pulsed Laser Deposition of Superconductor/Ferromagnetic YBa2Cu3Oy/SrTiO3/La2/3Sr1/3MnO3 Heterostructures

1999 ◽  
Vol 574 ◽  
Author(s):  
V. Trtík ◽  
F. Sánchez ◽  
C. Ferrater ◽  
M. Varela ◽  
L. Fábrega ◽  
...  
Keyword(s):  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Complete Analysis ◽  
Force Microscopy ◽  
Atomic Force ◽  
Strip Geometry ◽  
Droplet Density ◽  
Scanning Electron ◽  
Deposition Conditions

AbstractYBa2Cu3Oy/SrTiO3/La2/3Sr1/3MnO3 heterostructures have been deposited on LaAlO3(001) and SrTiO3(001) substrates by pulsed laser deposition. First, the influence of deposition conditions on crystallinity and morphology of single LSMO films was examined. Results were used for preparation of heterostructures in tri-layer and cross-strip geometry. Cross-strip geometry was defined by direct shadow mask patterning. Different characterization techniques have been used to determine and correlate the heterostructure properties. A complete analysis of the crystal structure has been carried out with a four-circle difractometer. Morphology has been studied by scanning electron microscopy and atomic force microscopy in order to determine surface roughness and droplet density. Basic electrical properties of films have been determined.

Cross-Sectional Nanoindentation of Alumina Thin Films Deposited by Pulsed Laser Deposition Process

2006 ◽  
Author(s):  
Sudheer Neralla ◽  
Sergey Yarmolenko ◽  
Dhananjay Kumar ◽  
Devdas Pai ◽  
Jag Sankar
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
High Hardness ◽  
Deposition Process ◽  
Laser Deposition ◽  
Cross Sectional ◽  
Adhesion Properties ◽  
Force Microscopy ◽  
Atomic Force

Alumina is a widely used ceramic material due to its high hardness, wear resistance and dielectric properties. The study of phase transformation and its correlation to the mechanical properties of alumina is essential. In this study, interfacial adhesion properties of alumina thin films are studied using cross-sectional nanoindentation (CSN) technique. Alumina thin films are deposited at 200 and 700 °C, on Si (100) substrates with a weak Silica interface, using pulsed laser deposition (PLD) process. Effect of annealing on the surface morphology of the thin films is studied using atomic force microscopy. Xray diffraction studies revealed that alumina thin films are amorphous in nature at 200 °C and polycrystalline with predominant gamma alumina phase at 700 °C.

Growth of Carbon Nanotubes on Si Substrate Using Fe Catalyst Produced by Pulsed Laser Deposition

2008 ◽  
Vol 8 (11) ◽  
pp. 5748-5752
Author(s):  
S. Krishnamurthy ◽  
T. Donnelly ◽  
N. McEvoy ◽  
W. Blau ◽  
J. G. Lunney ◽  
...  
Keyword(s):  
Carbon Nanotubes ◽  
Pulsed Laser Deposition ◽  
Chemical Vapour ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Force Microscopy ◽  
Fe Catalyst ◽  
Atomic Force ◽  
Catalytic Nanoparticles ◽  
Size Controlled

We report the growth of carbon nanotubes on the size controlled iron catalytic nanoparticles. The nanotubes were grown by thermal chemical vapour deposition (CVD) in the temperature range 600–850 °C. The Fe films were deposited on silicon by pulsed laser deposition in vacuum. Atomic force microscopy measurements were performed on the catalytic nanoparticles. The topography of the catalytic nanoparticles shows the homogenous distribution of Fe catalyst. We observe the nanotubes are produced only at temperatures between 650 and 800 °C, and within this narrow temperature regime the yield of nanotubes reaches a maximum around 750 °C and then declines. Raman measurements illustrate a high G/D peak ratio indicating good nanotube quality. By further defining the size of the catalyst the diameter of these carbon nanotubes can be controlled.

Pulsed Laser Deposition and Characterization of InZnO Alloyed Thin Film

2008 ◽  
Vol 368-372 ◽  
pp. 308-311
Author(s):  
F.K. Shan ◽  
G.X. Liu ◽  
Byoung Chul Shin ◽  
Won Jae Lee ◽  
W.T. Oh
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Atomic Ratio ◽  
Laser Deposition ◽  
Morphological Properties ◽  
High Quality ◽  
Atomic Force ◽  
Different Temperatures ◽  
Zno Powder

High-quality In2O3 powder and ZnO powder had been used to make the ceramic target and the atomic ratio of 1 to 1 of indium and zinc had been prepared in this study. The alloyed thin films had been deposited on sapphire (001) substrates at different temperatures (100–600°C) by using pulsed laser deposition (PLD) technique. An x-ray diffractometer and an atomic force microscope were used to investigate the structural and morphological properties of the alloyed thin films. It was observed that the alloyed thin films deposited at the temperatures lower than 300°C were amorphous, and the alloyed thin films deposited at high temperatures were crystallized. A spectrophotometer was used to investigate the transmittances of the alloyed thin films. It was found that the alloyed thin films were of high quality. The band gap energies of the alloys were calculated by linear fitting the sharp absorption edges of the transmittance spectra. The Hall measurements were also carried out to identify the electrical properties of the thin films.

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