Nanocharacterization of Texture and Hillock Formation in Thin Al And Al-0.2%Cu Films for Thin-Film Transistors

1996 ◽  
Vol 441 ◽  
Author(s):  
H. Takatsuji ◽  
S. Tsuji ◽  
H. Kitahara ◽  
K. Tsujimoto ◽  
K. Kuroda ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Layer Structure ◽  
Liquid Crystal Display ◽  
Migration Test ◽  
Cross Sectional ◽  
Cu Films ◽  
Glass Substrates ◽  
Hillock Formation ◽  
Cu Thin Film

AbstractThe relation between the nanostructure of pure Al and Al-0.2 wt.% Cu thin films on glass substrates and anti-stress migration properties were investigated. These films were deposited on liquid-crystal display (LCD) grade glass substrate (550 x 650 mm) by means of two types of dc magnetron multi-chamber sputtering apparatus.We developed the nanoindentation techniques to accelerate the characterization time for stress migration test. By AFM and cross-sectional TEM observations, we found an unusual three-layer structure in a Al-Cu thin film with strong anti-stress migration property.

PREPARATION AND CHARACTERIZATION OF POLYVINYL ALCOHOL THIN FILMS FOR ORGANIC THIN FILM TRANSISTORS AND BIOMEDICAL APPLICATIONS

2018 ◽  
Vol 5 (2) ◽  
pp. 16-18
Author(s):  
Chandar Shekar B ◽  
Ranjit Kumar R ◽  
Dinesh K.P.B ◽  
Sulana Sundar C ◽  
Sunnitha S ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Thin Film Transistors ◽  
Gravimetric Method ◽  
Dip Coating ◽  
Organic Thin Film Transistors ◽  
Poly Vinyl Alcohol ◽  
Organic Thin Film ◽  
Glass Substrates ◽  
Coating Method

Thin films of poly vinyl alcohol (PVA) were prepared on pre-cleaned glass substrates by Dip Coating Method. FTIR spectrum was used to identify the functional groups present in the prepared films. The vibrational peaks observed at 1260 cm-1 and 851 cm-1 are assigned to C–C stretching and CH rocking of PVA.The characteristic band appearing at 1432 cm-1 is assigned to C–H bend of CH2 of PVA. The thickness of the prepared thin films were measured by using an electronic thickness measuring instrument (Tesatronic-TTD20) and cross checked by gravimetric method. XRD spectra indicated the amorphous nature of the films.Surface morphology of the coated films was studied by scanning electron microscope (SEM). The surface revealed no pits and pin holes on the surface. The observed surface morphology indicated that these films could be used as dielectric layer in organic thin film transistors and as drug delivery system for wound healing.

HgTe Nanocrystal-Based Thin-Film Transistors Fabricated on Glass Substrates

2007 ◽  
Vol 28 (1) ◽  
pp. 42-44 ◽  
Author(s):  
Hyunsuk Kim ◽  
Dong-Won Kim ◽  
Kyoungah Cho ◽  
Sangsig Kim
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Glass Substrates

scholarly journals AlN/InAlN thin-film transistors fabricated on glass substrates at room temperature

2019 ◽  
Vol 9 (1) ◽  
Author(s):  
Kyohei Nakamura ◽  
Atsushi Kobayashi ◽  
Kohei Ueno ◽  
Jitsuo Ohta ◽  
Hiroshi Fujioka
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Room Temperature ◽  
Glass Substrates

Effective performance improvement of organic thin film transistors by using tri-layer insulators

2018 ◽  
Vol 83 (2) ◽  
pp. 20201 ◽  
Author(s):  
Yao Ni ◽  
Jianlin Zhou ◽  
Yuanyuan Hao ◽  
Hang Yu ◽  
Yanyun Li ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Silicon Oxide ◽  
Layer Structure ◽  
Organic Thin Film Transistors ◽  
Organic Thin Film ◽  
Interface Quality ◽  
Organic Semiconductor Materials ◽  
Effective Performance ◽  
P Type

Organic thin film transistors (OTFTs) with silicon oxide (SiO2)/poly(4-vinylphenol) (PVP)/polymethylmethacrylate (PMMA) tri-layer structure (SPP) as dielectric layers have been fabricated. To verify the validity of such tri-layer structure, two different organic semiconductor materials such as p-type pentacene and n-type fluorinated copper phthalo–cyanine (F16CuPc) are both used for fabricating OTFTs. Comparing with the OTFTs even by using PMMA modification, the better interface quality existing between SPP dielectric and organic film leads a higher conductive efficiency for transport carriers in channel. And then the field effect carriers (hole in pentacene OTFTs and electron in F16CuPc OTFTs) mobilities are both increased obviously. Our results show the SPP dielectric structure can be widely used to improve performance of OTFTs.

Characteristics of thin film transistors fabricated employing various sequential lateral solidification poly-Si microstructures

2004 ◽  
Vol 19 (2) ◽  
pp. 481-487 ◽  
Author(s):  
Ji-Yong Park ◽  
Hye-Hyang Park ◽  
Ki-Yong Lee ◽  
Ho-Kyoon Chung
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Liquid Crystal Display ◽  
Light Emitting Diode ◽  
Superior Performance ◽  
Light Emitting ◽  
Organic Light Emitting Diode ◽  
Average Value ◽  
Sequential Lateral Solidification ◽  
Device Properties

Sequential lateral solidification (SLS) is known to be a promising method to make low-temperature poly-Si thin film transistors (LTPS TFTs) with superior performance for fabrication of highly circuit-integrated flat panel displays such as TFT liquid crystal display and TFT organic light-emitting diode. The dependence of TFT characteristics on the details of the SLS poly-Si microstructures was studied by varying the size, direction, and shape of the grains by applying different SLS crystallization mask patterns and processing details. The TFTs results demonstrated that various device properties and characteristics are obtained depending on the specifics of the microstructures. Nearly direction-insensitive TFTs of mobility about 300 cm2/V·s (within 5% variation of average value) were successfully fabricated by controlling the microstructures. Such a characteristic is recognized as being desirable for an optimal integration of the peripheral circuits.

Thin-film transistors from very low temperature polycrystalline Si on glass substrates

1989 ◽  
Vol 32 (5) ◽  
pp. 391-396 ◽  
Author(s):  
W. Schmolla ◽  
J. Diefenbach ◽  
G. Blang ◽  
B. Ocker ◽  
W. Senske
Keyword(s):  
Thin Film ◽  
Low Temperature ◽  
Thin Film Transistors ◽  
Glass Substrates ◽  
Very Low Temperature

Transmission electron microscopy of thin-film transistors on glass substrates

1998 ◽  
Vol 319 (1-2) ◽  
pp. 106-109 ◽  
Author(s):  
Katsuhiro Tsujimoto ◽  
Satoshi Tsuji ◽  
Kotaro Kuroda ◽  
Hiroyasu Saka
Keyword(s):  
Thin Film ◽  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Thin Film Transistors ◽  
Glass Substrates ◽  
Transmission Electron

Pixel Architecture for Low-Power Liquid Crystal Display Comprising Oxide and Ferroelectric Memory Thin Film Transistors

2015 ◽  
Vol 36 (6) ◽  
pp. 585-587 ◽  
Author(s):  
Seung-Hyuck Lee ◽  
Jongbin Kim ◽  
Seong Ho Yoon ◽  
Kyeong-Ah Kim ◽  
Sung-Min Yoon ◽  
...  
Keyword(s):  
Thin Film ◽  
Liquid Crystal ◽  
Low Power ◽  
Thin Film Transistors ◽  
Liquid Crystal Display ◽  
Ferroelectric Memory
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