HgTe Nanocrystal-Based Thin-Film Transistors Fabricated on Glass Substrates

2007 ◽  
Vol 28 (1) ◽  
pp. 42-44 ◽  
Author(s):  
Hyunsuk Kim ◽  
Dong-Won Kim ◽  
Kyoungah Cho ◽  
Sangsig Kim
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Glass Substrates

PREPARATION AND CHARACTERIZATION OF POLYVINYL ALCOHOL THIN FILMS FOR ORGANIC THIN FILM TRANSISTORS AND BIOMEDICAL APPLICATIONS

2018 ◽  
Vol 5 (2) ◽  
pp. 16-18
Author(s):  
Chandar Shekar B ◽  
Ranjit Kumar R ◽  
Dinesh K.P.B ◽  
Sulana Sundar C ◽  
Sunnitha S ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Thin Film Transistors ◽  
Gravimetric Method ◽  
Dip Coating ◽  
Organic Thin Film Transistors ◽  
Poly Vinyl Alcohol ◽  
Organic Thin Film ◽  
Glass Substrates ◽  
Coating Method

Thin films of poly vinyl alcohol (PVA) were prepared on pre-cleaned glass substrates by Dip Coating Method. FTIR spectrum was used to identify the functional groups present in the prepared films. The vibrational peaks observed at 1260 cm-1 and 851 cm-1 are assigned to C–C stretching and CH rocking of PVA.The characteristic band appearing at 1432 cm-1 is assigned to C–H bend of CH2 of PVA. The thickness of the prepared thin films were measured by using an electronic thickness measuring instrument (Tesatronic-TTD20) and cross checked by gravimetric method. XRD spectra indicated the amorphous nature of the films.Surface morphology of the coated films was studied by scanning electron microscope (SEM). The surface revealed no pits and pin holes on the surface. The observed surface morphology indicated that these films could be used as dielectric layer in organic thin film transistors and as drug delivery system for wound healing.

scholarly journals AlN/InAlN thin-film transistors fabricated on glass substrates at room temperature

2019 ◽  
Vol 9 (1) ◽  
Author(s):  
Kyohei Nakamura ◽  
Atsushi Kobayashi ◽  
Kohei Ueno ◽  
Jitsuo Ohta ◽  
Hiroshi Fujioka
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Room Temperature ◽  
Glass Substrates

Thin-film transistors from very low temperature polycrystalline Si on glass substrates

1989 ◽  
Vol 32 (5) ◽  
pp. 391-396 ◽  
Author(s):  
W. Schmolla ◽  
J. Diefenbach ◽  
G. Blang ◽  
B. Ocker ◽  
W. Senske
Keyword(s):  
Thin Film ◽  
Low Temperature ◽  
Thin Film Transistors ◽  
Glass Substrates ◽  
Very Low Temperature

Transmission electron microscopy of thin-film transistors on glass substrates

1998 ◽  
Vol 319 (1-2) ◽  
pp. 106-109 ◽  
Author(s):  
Katsuhiro Tsujimoto ◽  
Satoshi Tsuji ◽  
Kotaro Kuroda ◽  
Hiroyasu Saka
Keyword(s):  
Thin Film ◽  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Thin Film Transistors ◽  
Glass Substrates ◽  
Transmission Electron

Monolithically Integrated p- & n- Channel Thin Film Transistors of Nanocrystalline Silicon on Plastic Substrates

2004 ◽  
Vol 808 ◽  
Author(s):  
I-Chun Cheng ◽  
Sigurd Wagner
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Gate Dielectric ◽  
Structural Evolution ◽  
Nanocrystalline Silicon ◽  
Leakage Currents ◽  
Plastic Substrates ◽  
Monolithically Integrated ◽  
Glass Substrates ◽  
Electron Field

ABSTRACTInverters made of monolithically integrated p- and n-channel thin film transistors of nanocrystalline silicon were demonstrated on both Corning 1737 glass and Kapton E polyimide substrates. The TFT's geometry is staggered top-gate, bottom-source/rain. A nc-Si:H seed layer promotes the structural evolution of the nc-Si:H channel. Electron field-effect mobilities of 15 - 30 cm2V−1s-1 and hole mobilities of 0.15 - 0.35 cm2V−1s−1 were obtained. Slightly lower carrier mobilities were observed in the TFTs made on polyimide than on glass substrates. High gate leakage currents and offsets between the supply HIGH voltages and the output voltages in the inverters indicate that the low-temperature gate dielectric needs improvement.

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