MOCVD growth of ZnCdSe on InP (001) substrates

1996 ◽  
Vol 441 ◽  
Author(s):  
Hon-Kit Won ◽  
S. K. Hark
Keyword(s):  
Critical Thickness ◽  
High Growth ◽  
Epitaxial Films ◽  
X Ray Diffraction ◽  
Double Crystal ◽  
X Ray ◽  
Mocvd Growth ◽  
Complete Relaxation ◽  
Composition And Structure

AbstractA series of ZnCdSe epitaxial films containing various amounts of Cd were grown on InP (001) substrates using DEZn, DMCd and DESe in the temperature range of 350 to 450°C. The composition and structure of the films were studied by EDX and high resolution X-ray diffraction techniques. It was found that Cd rich films were obtained at low while Zn rich films at high growth temperatures. Double-crystal rocking curves of the films showed that the Cd rich films have substantially fewer defects than similar films grown on GaAs. This improvement in structure is attributed to the closer match of the lattice parameters of lnP and ZnCdSe. The independent determination of composition and structure allowed us to measure the degree of relaxation of the films. We found that even for films whose thickness far exceeds the critical thickness, complete relaxation is not achieved.

Characterization of Epitaxial Films by X-Ray Diffraction

1985 ◽  
Vol 29 ◽  
pp. 353-366 ◽  
Author(s):  
Armin Segmüller
Keyword(s):  
Strain Tensor ◽  
Grazing Incidence ◽  
Epitaxial Films ◽  
X Ray Diffraction ◽  
Double Crystal ◽  
X Ray ◽  
Structural Details ◽  
Composition Profiles

AbstractIn this paper, the application of recently developed x-ray diffraction techniques to the characterization of thin epitaxial films will be discussed. The double-crystal diffractometer, with high resolution in the non-dispersive arrangement, enables the materials scientist to study epitaxial systems having a very small mismatch with high precision. A key part of the characterization of an epitaxial film is the determination of the strain tensor by measuring lattice spacing! in various directions The determination of strain and composition profiles in ion-implanted films, epitaxial layers and superlattices by rocking-curve analysis will also be reviewed. Grazingincidence diffraction, an emerging new technique, can be used to obtain structural details parallel to the interface on films with thicknesses ranging down to a few atomic layers. The synchroton has now become increasingly available as a powerful source of x radiation which will facilitate the application of conventional and grazing-incidence diffraction to ultra-thin films.

scholarly journals Progress in Microanalysis

2013 ◽  
Vol 21 (3) ◽  
pp. 7-7
Author(s):  
Charles Lyman
Keyword(s):  
Light Microscopy ◽  
Spatial Resolution ◽  
Equilibrium Phase ◽  
X Ray Diffraction ◽  
Bulk Analysis ◽  
X Ray ◽  
Analysis Techniques ◽  
Composition And Structure

Many researchers view microanalysis as the determination of composition and structure of individual phases at a spatial resolution of 1 μm or better. It is remarkable to me that much of what we know about the phases shown in equilibrium phase diagrams was determined using bulk analysis techniques like powder X-ray diffraction in combination with light microscopy of flat-polished sections of materials. The identities and amounts of phases were deduced from systematic experiments because there was no way to analyze micrometer-sized phases in situ.

Critical Thickness Determination of II-VI Semiconductors by Rheed and X-Ray Diffraction

1995 ◽  
Vol 182-184 ◽  
pp. 147-150 ◽  
Author(s):  
D. Reisinger ◽  
M.J. Kastner ◽  
K. Wolf ◽  
H. Steinkirchner ◽  
W. Häckl ◽  
...  
Keyword(s):  
Critical Thickness ◽  
X Ray Diffraction ◽  
X Ray ◽  
Thickness Determination

Structure Determination of B4C and SiC Thin Films Via Synchrotron High-Resolution Diffraction

1997 ◽  
Vol 505 ◽  
Author(s):  
J. Hershberger ◽  
F. Kustas ◽  
Z. U. Rek ◽  
S. M. Yalisove ◽  
J. C. Bilello
Keyword(s):  
Thin Films ◽  
Average Density ◽  
Distribution Functions ◽  
Degree Of Crystallinity ◽  
X Ray Diffraction ◽  
Double Crystal ◽  
X Ray ◽  
Si Substrates ◽  
X Ray Scattering

ABSTRACTThin films of B4C and SiC deposited by magnetron sputtering as components of multilayers have the potential to provide significant property improvements over current wear resistant coating technology. B4C and SiC have previously been found to be amorphous and possibly nanocrystalline under the deposition conditions used. This study reports results of synchrotron x-ray scattering experiments providing information on the degree of crystallinity, strain, average density, and coordination number in 2000 Å films of these compounds on Si substrates. Radial distribution functions from B4C and SiC thin films were obtained and used to model the structure. Strain results are compared with Double Crystal x-ray Diffraction Topography (DCDT) results as a means for establishing a standard strain state.

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