Determination of the lattice parameter and Poisson ratio for AlAs via high-resolution x-ray-diffraction studies of epitaxial films

1993 ◽  
Vol 48 (12) ◽  
pp. 9154-9157 ◽  
Author(s):  
R. P. Leavitt ◽  
F. J. Towner
Keyword(s):  
High Resolution ◽  
Poisson Ratio ◽  
Lattice Parameter ◽  
Epitaxial Films ◽  
X Ray Diffraction ◽  
X Ray

High-precision absolute lattice parameter determination of SrTiO3, DyScO3 and NdGaO3 single crystals

2012 ◽  
Vol 68 (1) ◽  
pp. 8-14 ◽  
Author(s):  
Martin Schmidbauer ◽  
Albert Kwasniewski ◽  
Jutta Schwarzkopf
Keyword(s):  
High Resolution ◽  
High Precision ◽  
Room Temperature ◽  
Systematic Errors ◽  
Lattice Parameter ◽  
Parameter Determination ◽  
X Ray Diffraction ◽  
X Ray ◽  
Bond Method

The lattice parameters of three perovskite-related oxides have been measured with high precision at room temperature. An accuracy of the order of 10−5 has been achieved by applying a sophisticated high-resolution X-ray diffraction technique which is based on the modified Bond method. The results on cubic SrTiO3 [a = 3.905268 (98) Å], orthorhombic DyScO3 [a = 5.442417 (54), b = 5.719357 (52) and c = 7.904326 (98) Å], and orthorhombic NdGaO3 [a = 5.428410 (54), b = 5.498407 (55) and c = 7.708878 (95) Å] are discussed in view of possible systematic errors as well as non-stoichiometry in the crystals.

Determination of twist angle of in-plane mosaic spread of GaN films by high-resolution X-ray diffraction

2003 ◽  
Vol 255 (1-2) ◽  
pp. 63-67 ◽  
Author(s):  
X.H. Zheng ◽  
H. Chen ◽  
Z.B. Yan ◽  
Y.J. Han ◽  
H.B. Yu ◽  
...  
Keyword(s):  
High Resolution ◽  
Twist Angle ◽  
X Ray Diffraction ◽  
X Ray ◽  
Mosaic Spread

Composition determination of β-(AlxGa1−x)2O3layers coherently grown on (010) β-Ga2O3substrates by high-resolution X-ray diffraction

2016 ◽  
Vol 9 (6) ◽  
pp. 061102 ◽  
Author(s):  
Yuichi Oshima ◽  
Elaheh Ahmadi ◽  
Stefan C. Badescu ◽  
Feng Wu ◽  
James S. Speck
Keyword(s):  
High Resolution ◽  
X Ray Diffraction ◽  
X Ray ◽  
Composition Determination

scholarly journals Bunches of misfit dislocations on the onset of relaxation of Si0.4Ge0.6/Si(001) epitaxial films revealed by high-resolution x-ray diffraction

2017 ◽  
Vol 122 (10) ◽  
pp. 105302 ◽  
Author(s):  
Vladimir Kaganer ◽  
Tatjana Ulyanenkova ◽  
Andrei Benediktovitch ◽  
Maksym Myronov ◽  
Alex Ulyanenkov
Keyword(s):  
High Resolution ◽  
Epitaxial Films ◽  
Misfit Dislocations ◽  
X Ray Diffraction ◽  
X Ray

Determination of the Twist Angle of GaN Film by High Resolution X-ray Diffraction

2008 ◽  
Vol 1 ◽  
pp. 045004 ◽  
Author(s):  
Hongtao Li ◽  
Yi Luo ◽  
Lai Wang ◽  
Guangyi Xi ◽  
Yang Jiang ◽  
...  
Keyword(s):  
High Resolution ◽  
Twist Angle ◽  
X Ray Diffraction ◽  
X Ray ◽  
Gan Film
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