scholarly journals Dose Rate Effects During Damage Accumulation in Silicon

1996 ◽  
Vol 438 ◽  
Author(s):  
M.-J. Caturla ◽  
T. Diaz de la Rubia
Keyword(s):  
Molecular Dynamics ◽  
Monte Carlo ◽  
Dose Rate ◽  
Heavy Ions ◽  
Damage Accumulation ◽  
Ion Irradiation ◽  
Monte Carlo Model ◽  
Dose Rate Effects ◽  
Rate Effects ◽  
Light Ions

AbstractWe combine molecular dynamics and Monte Carlo simulations to study damage accumulation and dose rate effects during irradiation of Silicon. We obtain the initial stage of the damage produced by heavy and light ions using classical molecular dynamics simulations. While heavy ions like As or Pt induce amorphization by single ion impact, light ions like B only produce point defects or small clusters of defects. The amorphous pockets generated by heavy ions are stable below room temperature and recrystallize at temperatures below the threshold for recrystallization of a planar amorphous-crystalline interface. The damage accumulation during light ion irradiation is simulated using a Monte Carlo model for defect diffusion. In this approach, we study the damage in the lattice as a function of dose and dose rate. A strong reduction in the total number of defects left in the lattice is observed for lower dose rates.

scholarly journals Dose Rate Effects During Damage Accumulation in Silicon

1996 ◽  
Vol 439 ◽  
Author(s):  
M. -J. Caturla ◽  
T. Diaz de la Rubia
Keyword(s):  
Molecular Dynamics ◽  
Monte Carlo ◽  
Dose Rate ◽  
Heavy Ions ◽  
Damage Accumulation ◽  
Ion Irradiation ◽  
Monte Carlo Model ◽  
Dose Rate Effects ◽  
Rate Effects ◽  
Light Ions

AbstractWe combine molecular dynamics and Monte Carlo simulations to study damage accumulation and dose rate effects during irradiation of Silicon. We obtain the initial stage of the damage produced by heavy and light ions using classical molecular dynamics simulations. While heavy ions like As or Pt induce amorphization by single ion impact, light ions like B only produce point defects or small clusters of defects. The amorphous pockets generated by heavy ions are stable below room temperature and recrystallize at temperatures below the threshold for recrystallization of a planar amorphous-crystalline interface. The damage accumulation during light ion irradiation is simulated using a Monte Carlo model for defect diffusion. In this approach, we study the damage in the lattice as a function of dose and dose rate. A strong reduction in the total number of defects left in the lattice is observed for lower dose rates.

Damage Accumulation and Annealing in Ion Irradiated Silicon

1990 ◽  
Vol 201 ◽  
Author(s):  
F. Priolo ◽  
A. Battaglia ◽  
C. Spinella ◽  
E. Rimini
Keyword(s):  
Substrate Temperature ◽  
Single Crystal ◽  
Heavy Ions ◽  
Damage Accumulation ◽  
Ion Irradiation ◽  
High Energy ◽  
Doping Content ◽  
Damage Morphology ◽  
Light Ions

AbstractThe evolution of pre-existing damage structures in Si under high energy ion irradiation is discussed. Different initial morphologies are investigated: a sample partially pre-damaged with heavy ions and a sample partially pre-damaged with light ions are compared within them and with an undamaged single crystal. It is shown that ion irradiation can produce either damage accumulation, in the form of amorphous regions, or damage annealing depending on the pre-existing damage morphology, on the substrate temperature, and on the doping content in the irradiated layer. These data are discussed and interpreted on the basis of the existing models on ion induced amorphization and crystallization.

scholarly journals Damage Nucleation in Si During Ion Irradiation

1984 ◽  
Vol 41 ◽  
Author(s):  
O. W. Holland ◽  
D. Fathy ◽  
J. Narayan
Keyword(s):  
Dose Rate ◽  
Room Temperature ◽  
Ion Irradiation ◽  
Liquid Nitrogen Temperature ◽  
Mass Dependence ◽  
Dose Rate Effects ◽  
Rate Effects ◽  
Temperature Irradiation ◽  
Nucleation Mechanisms ◽  
Accumulation Of Damage

AbstractDamage nucleation in single crystals of silicon during ion irradiation is investigated. Experimental results and mechanisms for damage nucleation during both room and liquid nitrogen temperature irradiation with different mass ions are discussed. It is shown that the accumulation of damage during room temperature irradiation depends on the rate of implantation. These dose rate effects are found to decrease in magnitude as the mass of the ions is increased. The significance of dose rate effects and their mass dependence on nucleation mechanisms is discussed.

Coupled Kinetic Monte Carlo and Molecular Dynamics Simulations of Implant Damage Accumulation in Silicon

2003 ◽  
Vol 792 ◽  
Author(s):  
Gustav Otto ◽  
Gerhard Hobler
Keyword(s):  
Molecular Dynamics ◽  
Monte Carlo ◽  
Ion Implantation ◽  
Damage Accumulation ◽  
Kinetic Monte Carlo ◽  
Md Simulations ◽  
Implantation Damage ◽  
Complex Process ◽  
Light Ions ◽  
Dynamics Simulations

ABSTRACTDamage formation during ion implantation is a complex process that cannot accurately be modeled by binary collision simulations alone. Molecular dynamics (MD) simulations are suited to describe the quenching of collision cascades, while thermally activated processes may be treated with the kinetic Monte Carlo (kMC) method.MD and kMC simulations have widely but separately been used to investigate damage accumulation and annealing in silicon. Simulation of ion implantation at room temperature, however, requires both methods to be coupled. In this paper we describe for the first time a scheme of the coupling between MD and lattice kMC for damage accumulation. Using this scheme we study the dynamic annealing behavior of implantation damage for heavy and light ions.

Dose rate effects on damage accumulation and void growth in self-ion irradiated tungsten

2021 ◽  
pp. 152905
Author(s):  
Weilin Jiang ◽  
Yuanyuan Zhu ◽  
Limin Zhang ◽  
Danny J. Edwards ◽  
Nicole R. Overman ◽  
...  
Keyword(s):  
Dose Rate ◽  
Void Growth ◽  
Damage Accumulation ◽  
Dose Rate Effects ◽  
Rate Effects
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