Damage Accumulation and Annealing in Ion Irradiated Silicon

1990 ◽  
Vol 201 ◽  
Author(s):  
F. Priolo ◽  
A. Battaglia ◽  
C. Spinella ◽  
E. Rimini
Keyword(s):  
Substrate Temperature ◽  
Single Crystal ◽  
Heavy Ions ◽  
Damage Accumulation ◽  
Ion Irradiation ◽  
High Energy ◽  
Doping Content ◽  
Damage Morphology ◽  
Light Ions

AbstractThe evolution of pre-existing damage structures in Si under high energy ion irradiation is discussed. Different initial morphologies are investigated: a sample partially pre-damaged with heavy ions and a sample partially pre-damaged with light ions are compared within them and with an undamaged single crystal. It is shown that ion irradiation can produce either damage accumulation, in the form of amorphous regions, or damage annealing depending on the pre-existing damage morphology, on the substrate temperature, and on the doping content in the irradiated layer. These data are discussed and interpreted on the basis of the existing models on ion induced amorphization and crystallization.

scholarly journals Dose Rate Effects During Damage Accumulation in Silicon

1996 ◽  
Vol 438 ◽  
Author(s):  
M.-J. Caturla ◽  
T. Diaz de la Rubia
Keyword(s):  
Molecular Dynamics ◽  
Monte Carlo ◽  
Dose Rate ◽  
Heavy Ions ◽  
Damage Accumulation ◽  
Ion Irradiation ◽  
Monte Carlo Model ◽  
Dose Rate Effects ◽  
Rate Effects ◽  
Light Ions

AbstractWe combine molecular dynamics and Monte Carlo simulations to study damage accumulation and dose rate effects during irradiation of Silicon. We obtain the initial stage of the damage produced by heavy and light ions using classical molecular dynamics simulations. While heavy ions like As or Pt induce amorphization by single ion impact, light ions like B only produce point defects or small clusters of defects. The amorphous pockets generated by heavy ions are stable below room temperature and recrystallize at temperatures below the threshold for recrystallization of a planar amorphous-crystalline interface. The damage accumulation during light ion irradiation is simulated using a Monte Carlo model for defect diffusion. In this approach, we study the damage in the lattice as a function of dose and dose rate. A strong reduction in the total number of defects left in the lattice is observed for lower dose rates.

scholarly journals Dose Rate Effects During Damage Accumulation in Silicon

1996 ◽  
Vol 439 ◽  
Author(s):  
M. -J. Caturla ◽  
T. Diaz de la Rubia
Keyword(s):  
Molecular Dynamics ◽  
Monte Carlo ◽  
Dose Rate ◽  
Heavy Ions ◽  
Damage Accumulation ◽  
Ion Irradiation ◽  
Monte Carlo Model ◽  
Dose Rate Effects ◽  
Rate Effects ◽  
Light Ions

AbstractWe combine molecular dynamics and Monte Carlo simulations to study damage accumulation and dose rate effects during irradiation of Silicon. We obtain the initial stage of the damage produced by heavy and light ions using classical molecular dynamics simulations. While heavy ions like As or Pt induce amorphization by single ion impact, light ions like B only produce point defects or small clusters of defects. The amorphous pockets generated by heavy ions are stable below room temperature and recrystallize at temperatures below the threshold for recrystallization of a planar amorphous-crystalline interface. The damage accumulation during light ion irradiation is simulated using a Monte Carlo model for defect diffusion. In this approach, we study the damage in the lattice as a function of dose and dose rate. A strong reduction in the total number of defects left in the lattice is observed for lower dose rates.

scholarly journals Radiation Effects in Amorphous Metallic Alloys as Revealed by Mössbauer Spectrometry: Part II. Ion Irradiation

Metals ◽  
2021 ◽  
Vol 11 (8) ◽  
pp. 1309
Author(s):  
Marcel Miglierini
Keyword(s):  
Heavy Ions ◽  
Radiation Effects ◽  
Ion Irradiation ◽  
Active Regions ◽  
Mössbauer Spectrometry ◽  
Metallic Alloys ◽  
Conversion Electrons ◽  
Amorphous Metallic Alloys ◽  
Mossbauer Spectrometry ◽  
Light Ions

Due to their excellent magnetic properties, amorphous metallic alloys (AMAs) are considered for the construction of magnetic cores of radio-frequency cavities in accelerators. Here, they might be exposed to ion bombardment. The influence of irradiation by both light and heavy ions featuring low and high energies, respectively, is followed by the techniques of 57Fe Mössbauer spectrometry. Modifications of surface layers in selected Fe-containing AMAs after ion irradiation are unveiled by detection of conversion electrons and photons of characteristic radiation whereas those in their bulk are derived from standard transmission spectra. Rearrangement of microstructure which favors the formation of magnetically active regions, is observed in surface regions bombarded by light ions. Heavy ions caused pronounced effects in the orientation of net magnetization of the irradiated samples. No measurable impact upon short-range order arrangement was observed. Part I of this paper is devoted to radiation effects in Fe-based AMAs induced by neutron irradiation.

Three-Dimensional Lithography for Rutile TiO2 Single Crystals using Swift Heavy Ions

2003 ◽  
Vol 797 ◽  
Author(s):  
Koichi Awazu ◽  
Makoto Fujimaki ◽  
Yoshimichi Ohki ◽  
Tetsuro Komatsubara
Keyword(s):  
Single Crystal ◽  
Hydrofluoric Acid ◽  
Ion Irradiation ◽  
Three Dimensional ◽  
Heavy Ion ◽  
High Energy ◽  
Stopping Power ◽  
A Value ◽  
Microscopy Measurement ◽  
Electronic Stopping Power

ABSTRACTWe have developed a nano-micro structure fabrication method in rutile TiO2 single crystal by use of swift heavy-ion irradiation. The area where ions heavier than Cl ion accelerated with MeV-order high energy were irradiated was well etched by hydrofluoric acid, by comparison etching was not observed in the pristine TiO2 single crystal. Noticed that the irradiated area could be etched to a depth at which the electronic stopping power of the ion decayed to a value of 6.2keV/nm. We also found that the value of the electronic stopping power was increased, eventually decreased against depth in TiO2 single crystal with, e.g. 84.5MeV Ca ion. Using such a beam, inside of TiO2 single crystal was selectively etched with 20% hydrofluoric acid, while the top surface of TiO2 single crystal subjected to irradiation was not etched. Roughness of the new surface created in the single crystal was within 7nm with the atomic forth microscopy measurement.

A poly(vinylidene fluoride-co-hexafluoro propylene) nanohybrid membrane using swift heavy ion irradiation for fuel cell applications

2015 ◽  
Vol 3 (19) ◽  
pp. 10413-10424 ◽  
Author(s):  
Karun Kumar Jana ◽  
Amit K. Thakur ◽  
Vinod K. Shahi ◽  
Devesh K. Avasthi ◽  
Dipak Rana ◽  
...  
Keyword(s):  
Heavy Ions ◽  
Vinylidene Fluoride ◽  
Ion Irradiation ◽  
Heavy Ion ◽  
High Energy ◽  
Heavy Ion Irradiation ◽  
Swift Heavy Ion ◽  
Thin Polymer ◽  
Poly Vinylidene Fluoride ◽  
Amorphous Zone

Through channels in thin polymer/nanohybrid films have been made by irradiating with high energy swift heavy ions (SHI) followed by selective chemical etching of the amorphous zone in the latent track created by SHI during the bombardment.

Ion Irradiation Smoothing and Film Bonding for Laser Mirrors

1983 ◽  
Vol 27 ◽  
Author(s):  
P. P. Pronko ◽  
A. W. Mccormick ◽  
D. C. Ingram ◽  
A. K. Rai ◽  
J. A. Woollam ◽  
...  
Keyword(s):  
Heavy Ions ◽  
Ion Irradiation ◽  
Surface Damage ◽  
Heavy Ion ◽  
High Energy ◽  
Metallic Surfaces ◽  
Heavy Ion Irradiation ◽  
Structural Bonding ◽  
Microstructure Of The Material

ABSTRACTIrradiation with high energy heavy ion beams has been investigated as a technique for improving the quality of highly reflecting metallic surfaces to be used as laser mirrors. Properties such as reflectivity, corrosion resistance, film bonding, and threshold to laser surface damage have been examined. Modifications of composition and microstructure of the material associated with the heavy ion irradiation have been measured with RBS, TEM, SEM, Auger, and ESCA. Reflectivity and extinction coefficient measurements were made using ellipsometry techniques. Observations indicate that keV heavy ion irradiations in the fluence range of 1015 to 1016 cm−2 produce significant surface smoothing. Additionally, MeV implants of heavy ions into films of Cu, Ag, Au and Al deposited on molybdenum substrates resulted in improvements to both tarnish resistance and structural bonding integrity.

scholarly journals TSV Technology and High-Energy Heavy Ions Radiation Impact Review

Electronics ◽  
2018 ◽  
Vol 7 (7) ◽  
pp. 112 ◽  
Author(s):  
Wenchao Tian ◽  
Tianran Ma ◽  
Xiaohan Liu
Keyword(s):  
Integrated Circuits ◽  
Research Methods ◽  
Heavy Ions ◽  
High Performance ◽  
Ion Irradiation ◽  
Low Cost ◽  
Three Dimensional ◽  
Heavy Ion ◽  
High Energy ◽  
Radiation Environment

Three-dimensional integrated circuits (3D IC) based on TSV (Through Silicon Via) technology is the latest packaging technology with the smallest size and quality. As a result, it can effectively reduce parasitic effects, improve work efficiency, reduce the power consumption of the chip, and so on. TSV-based silicon interposers have been applied in the ground environment. In order to meet the miniaturization, high performance and low-cost requirements of aerospace equipment, the adapter substrate is a better choice. However, the transfer substrate, as an important part of 3D integrated circuits, may accumulate charge due to heavy ion irradiation and further reduce the performance of the entire chip package in harsh space radiation environment or cause it to fail completely. Little research has been carried out until now. This article summarizes the research methods and conclusions of the research on silicon interposers and TSV technology in recent years, as well as the influence of high-energy heavy ions on semiconductor devices. Based on this, a series of research methods to study the effect of high-energy heavy ions on TSV and silicon adapter plates is proposed.

Microstructure of silicon implanted with MeV gold ions

1991 ◽  
Vol 49 ◽  
pp. 876-877
Author(s):  
M.J. Kim ◽  
M. Catalano ◽  
T.P. Sjoreen ◽  
R.W. Carpenter
Keyword(s):  
Single Crystal ◽  
Ion Irradiation ◽  
Microstructural Characterization ◽  
High Energy ◽  
Ion Milling ◽  
Cross Sectional ◽  
Microstructural Investigation ◽  
Annealing Behavior ◽  
Different Doses

High-energy implantation of silicon is of great interest in recent years for microelectronics due to the formation of a buried damage or dopant layer away from the active region of the device. The damage nucleation and growth behavior is known to vary significantly along the ion's track for MeV irradiation. In this paper, a detailed characterization of the damage morphology produced by MeV gold ions for different doses into single crystal Si, as well as the associated annealing behavior, is presented.Single crystal n-type Czochralski silicon {001} wafers were implanted with Au++ ions from doses of 1x1015 to 3x1016 cm-2 at 2-3 MeV. Specimen temperatures for all implantations were 20 or 300°C. A measurement with an infrared pyrometer of the implanted surface indicated a slight temperature rise during ion irradiation. The compositional and damage profiles were determined by Rutherford backscattering/channeling spectroscopy (RBS). Cross-sectional TEM samples for microstructural characterization were prepared by mechanical polishing and ion milling. A Philips 400ST/FEG analytical microscope was used for nanoprobe experiments, at 100 kV. Microstructural investigation was performed using ISI-002B and JEM-2000FX microscopes, at 200 kV.

Effects of High-Energy Ion Irradiation in Bismuth Thin Films at Low Temperature

2003 ◽  
Vol 792 ◽  
Author(s):  
Yasuhiro Chimi ◽  
Norito Ishikawa ◽  
Akihiro Iwase
Keyword(s):  
Thin Films ◽  
Low Temperature ◽  
Temperature Dependence ◽  
Heavy Ions ◽  
Ion Irradiation ◽  
High Energy ◽  
Superconducting Transition ◽  
Abrupt Increase ◽  
Annealing Behavior

ABSTRACTWe have studied high-energy ion irradiation effects in bismuth by measuring the electrical resistivity at low temperature in relation to its structural change. Bismuth thin films (330–520 Å thick) are irradiated below ∼10 K with energetic (150–200-MeV) heavy ions. The resistivity of the specimen is measured in situ below ∼7.2 K during the irradiation. After the irradiation, annealing behavior of the resistivity is observed up to ∼30 K. The temperature dependence of the resistivity during annealing shows an abrupt increase around 20 K, implying re-crystallization of irradiation-induced amorphous regions. We have tried to detect a superconducting transition which may take place as a result of irradiation-induced amorphization. In the range of the measuring temperature down to ∼4.9 K, resistivity decrease due to superconducting transition has not been observed in the temperature dependence of the resistivity after 200-MeV 197Au ion irradiation up to a fluence of 3.1×1012 cm-2.

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