scholarly journals Damage Nucleation in Si During Ion Irradiation

1984 ◽  
Vol 41 ◽  
Author(s):  
O. W. Holland ◽  
D. Fathy ◽  
J. Narayan
Keyword(s):  
Dose Rate ◽  
Room Temperature ◽  
Ion Irradiation ◽  
Liquid Nitrogen Temperature ◽  
Mass Dependence ◽  
Dose Rate Effects ◽  
Rate Effects ◽  
Temperature Irradiation ◽  
Nucleation Mechanisms ◽  
Accumulation Of Damage

AbstractDamage nucleation in single crystals of silicon during ion irradiation is investigated. Experimental results and mechanisms for damage nucleation during both room and liquid nitrogen temperature irradiation with different mass ions are discussed. It is shown that the accumulation of damage during room temperature irradiation depends on the rate of implantation. These dose rate effects are found to decrease in magnitude as the mass of the ions is increased. The significance of dose rate effects and their mass dependence on nucleation mechanisms is discussed.

scholarly journals Dose Rate Effects During Damage Accumulation in Silicon

1996 ◽  
Vol 438 ◽  
Author(s):  
M.-J. Caturla ◽  
T. Diaz de la Rubia
Keyword(s):  
Molecular Dynamics ◽  
Monte Carlo ◽  
Dose Rate ◽  
Heavy Ions ◽  
Damage Accumulation ◽  
Ion Irradiation ◽  
Monte Carlo Model ◽  
Dose Rate Effects ◽  
Rate Effects ◽  
Light Ions

AbstractWe combine molecular dynamics and Monte Carlo simulations to study damage accumulation and dose rate effects during irradiation of Silicon. We obtain the initial stage of the damage produced by heavy and light ions using classical molecular dynamics simulations. While heavy ions like As or Pt induce amorphization by single ion impact, light ions like B only produce point defects or small clusters of defects. The amorphous pockets generated by heavy ions are stable below room temperature and recrystallize at temperatures below the threshold for recrystallization of a planar amorphous-crystalline interface. The damage accumulation during light ion irradiation is simulated using a Monte Carlo model for defect diffusion. In this approach, we study the damage in the lattice as a function of dose and dose rate. A strong reduction in the total number of defects left in the lattice is observed for lower dose rates.

The Microstructure of Xe Implanted GaAs

1975 ◽  
Vol 33 ◽  
pp. 258-259
Author(s):  
C. R. Hills ◽  
G. J. Thomas ◽  
H. J. Stein
Keyword(s):  
Ion Implantation ◽  
Dose Rate ◽  
Room Temperature ◽  
Low Dose ◽  
Important Variable ◽  
Transmission Microscopy ◽  
Dose Rates ◽  
Dose Rate Effects ◽  
Rate Effects ◽  
Ion Backscattering

Previous investigators have shown that the surface regions of GaAs samples implanted at room temperature with 40-100 keV Ne ions become amorphous after a dose of the order of 1x1014ions cm-2. Their study also indicated that implantation above room temperature (35°-200°C) results in the retention of crystallinity even with fluences two to three orders of magnitude higher. Investigators using ion backscattering and optical absorption have shown that ion dose rate is also an important variable in ion implantation. In the present investigation, transmission microscopy has been used to further study the temperature and dose rate effects of ion implantation in GaAs. A number of {111} and {l00} single crystal GaAs samples have been implanted with 275 keV Xe ions to doses of 1015 and 1016 ions cm-2 at dose rates ranging from 2.5x1012 to 8.1xl012ions cm-2 sec-1.Low dose (1015ions cm-2) implantations at room temperature produced amorphous layers at all dose rates.

scholarly journals Dose Rate Effects During Damage Accumulation in Silicon

1996 ◽  
Vol 439 ◽  
Author(s):  
M. -J. Caturla ◽  
T. Diaz de la Rubia
Keyword(s):  
Molecular Dynamics ◽  
Monte Carlo ◽  
Dose Rate ◽  
Heavy Ions ◽  
Damage Accumulation ◽  
Ion Irradiation ◽  
Monte Carlo Model ◽  
Dose Rate Effects ◽  
Rate Effects ◽  
Light Ions

AbstractWe combine molecular dynamics and Monte Carlo simulations to study damage accumulation and dose rate effects during irradiation of Silicon. We obtain the initial stage of the damage produced by heavy and light ions using classical molecular dynamics simulations. While heavy ions like As or Pt induce amorphization by single ion impact, light ions like B only produce point defects or small clusters of defects. The amorphous pockets generated by heavy ions are stable below room temperature and recrystallize at temperatures below the threshold for recrystallization of a planar amorphous-crystalline interface. The damage accumulation during light ion irradiation is simulated using a Monte Carlo model for defect diffusion. In this approach, we study the damage in the lattice as a function of dose and dose rate. A strong reduction in the total number of defects left in the lattice is observed for lower dose rates.

scholarly journals Investigation of dose-rate effects and cell-cycle distribution under protracted exposure to ionizing radiation for various dose-rates

2018 ◽  
Vol 8 (1) ◽  
Author(s):  
Yusuke Matsuya ◽  
Stephen J. McMahon ◽  
Kaori Tsutsumi ◽  
Kohei Sasaki ◽  
Go Okuyama ◽  
...  
Keyword(s):  
Cell Cycle ◽  
Ionizing Radiation ◽  
Dose Rate ◽  
Cell Cycle Distribution ◽  
Dose Rates ◽  
Dose Rate Effects ◽  
Rate Effects

In vitro photodynamic therapy of human lung cancer: Investigation of dose-rate effects

Lung Cancer ◽  
1990 ◽  
Vol 6 (1-2) ◽  
pp. 63
Author(s):  
W Matthews ◽  
J Cook ◽  
JB Mitchell ◽  
RR Perry ◽  
S Evans ◽  
...  
Keyword(s):  
Lung Cancer ◽  
Photodynamic Therapy ◽  
Dose Rate ◽  
Human Lung ◽  
Human Lung Cancer ◽  
Dose Rate Effects ◽  
Rate Effects
Sign in / Sign up

Export Citation Format

Share Document