Al / Al-N / Ain Compositional Gradient Film Synthesized by Ion-Beam Assisted Deposition Method

1996 ◽  
Vol 438 ◽  
Author(s):  
Yoshiki Amamoto ◽  
Shingo Uchiyama ◽  
Yoshihisa Watanabe ◽  
Yoshikazu Nakamura
Keyword(s):  
Photoelectron Spectroscopy ◽  
Ion Beam ◽  
Beam Current ◽  
Deposition Method ◽  
Si Substrate ◽  
Compositional Gradient ◽  
Cross Sectional ◽  
X Ray ◽  
Ion Beam Assisted Deposition ◽  
The Cross

AbstractAl / AI-N / AIN compositional gradient thin film was deposited on a Si(100) substrate at room temperature by ion-beam assisted deposition method, with a diminishing ion beam current from 1.4 to 0 mA at increments of 0.3 mA in order to gradually decrease the nitrogen to aluminum ratio at the substrate. The gradual Al and AIN variation in composition was shown by the change of the Al / N atomic ratio analysed by the energy dispersive X-ray spectroscopy(EDX) and the X-ray photoelectron spectroscopy (XPS) in the cross section of the film. The formation of crystalline Al metal and AIN ceramic layer on the Si substrate was revealed by X-ray diffraction(XRD). The cross sectional image taken by high resolution transmission electron microscope (HRTEM) showed a nano-sized crystalline AI-N ceramic material and the flat interface between the Si substrate and the AIN film.

Formation of Aluminum Nitride Film for High Power Soft X-Ray Source Using Ion-Beam Assisted Deposition Method

2005 ◽  
pp. 43-46
Author(s):  
Takaomi Matsutani ◽  
Masato Kiuchi ◽  
Kiyotaka Shirouzu ◽  
Akihiro Yoshioka ◽  
Ryuichi Shimizu ◽  
...  
Keyword(s):  
Aluminum Nitride ◽  
High Power ◽  
Ion Beam ◽  
Nitride Film ◽  
Deposition Method ◽  
X Ray ◽  
Ion Beam Assisted Deposition

scholarly journals Low-energy Ar+ and N+ ion beam induced chemical vapor deposition using hexamethyldisilazane for the formation of nitrogen containing SiC and carbon containing SiN films

PLoS ONE ◽  
2021 ◽  
Vol 16 (10) ◽  
pp. e0259216
Author(s):  
Satoru Yoshimura ◽  
Satoshi Sugimoto ◽  
Takae Takeuchi ◽  
Kensuke Murai ◽  
Masato Kiuchi
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Photoelectron Spectroscopy ◽  
Ion Beam ◽  
Chemical Vapor ◽  
Film Deposition ◽  
Experimental Methodology ◽  
Si Substrate ◽  
X Ray ◽  
Silicon Nitride Films

We proposed an experimental methodology for producing films on substrates with an ion beam induced chemical vapor deposition (IBICVD) method using hexamethyldisilazane (HMDS) as a source material. In this study, both HMDS and ion beam were simultaneously injected onto a Si substrate. We selected Ar+ and N+ as the ion beam. The energy of the ion beam was 101 eV. Temperature of the Si substrate was set at 540 °C. After the experiments, films were found to be deposited on the substrates. The films were then analyzed by Fourier transform infrared (FTIR) spectroscopy, stylus profilometer, X-ray diffraction, atomic force microscopy, and X-ray photoelectron spectroscopy (XPS). The FTIR and XPS results showed that silicon carbide films containing small amount of nitrogen were formed when Ar+ ions were injected in conjunction with HMDS. On the other hand, in the cases of N+ ion beam irradiation, silicon nitride films involving small amount of carbon were formed. It was noted that no film deposition was observed when HMDS alone was supplied to the substrates without any ion beam injections.

XPS Investigation of Ion Implanted PMMA

1991 ◽  
Vol 235 ◽  
Author(s):  
R. Kallweit ◽  
U. Roll ◽  
H. Strack ◽  
A. Pocker
Keyword(s):  
Chemical Modification ◽  
Energy Dependence ◽  
Photoelectron Spectroscopy ◽  
Ion Beam ◽  
Ion Bombardment ◽  
Beam Current ◽  
Ion Energy ◽  
X Ray ◽  
Constant Dose ◽  
Energy Dependent

ABSTRACTDuring ion bombardment, polymethylmethacrylate (PMMA) shows degassing of polymer components with a fluence and energy dependent contraction of the material, which leads to a material modification.The ion beam induced chemical modification of the implanted layers was examined by means of X-ray photoelectron spectroscopy (XPS). The dependence of the chemical modification on beam current, ion fluence and ion energy was investigated for nitrogen implantations at energies ranging from 50 keV to 400 keV for ion fluences between 7×1013 / cm2 and 7×1015/cm2. Compared with the C-spectrum of virgin PMMA, the spectra of the implanted layers exhibited an increase of intensity of the 284.5 eV peak and the 286.4 eV peak. The ion beam induced modification led basically to generation of new C-o-groups. These generations show drastical changes in the dependence of the beam current and the ion fluence. Nevertheless, at a constant dose of 2×1014/cm2 the concentrations of the new groups did not indicate any energy dependence.

Automated Diagonal Slice and View Solution for 3D Device Structure Analysis

2018 ◽  
Author(s):  
Sang Hoon Lee ◽  
Jeff Blackwood ◽  
Stacey Stone ◽  
Michael Schmidt ◽  
Mark Williamson ◽  
...  
Keyword(s):  
Cross Section ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Image Data ◽  
Planar Surface ◽  
Device Structure ◽  
Cross Sectional ◽  
Device Structures ◽  
The Cross ◽  
Planar Analysis

Abstract The cross-sectional and planar analysis of current generation 3D device structures can be analyzed using a single Focused Ion Beam (FIB) mill. This is achieved using a diagonal milling technique that exposes a multilayer planar surface as well as the cross-section. this provides image data allowing for an efficient method to monitor the fabrication process and find device design errors. This process saves tremendous sample-to-data time, decreasing it from days to hours while still providing precise defect and structure data.

Quantitative Electrical Analysis of FIB Prepared Vias on BiCMOS and CMOS090 Designs

2006 ◽  
Author(s):  
B. Domengès ◽  
P. Poirier
Keyword(s):  
Ion Beam ◽  
Beam Current ◽  
Kelvin Probe ◽  
Metal Line ◽  
Cross Sectional ◽  
Probe Technique ◽  
Cross Sectional Analysis ◽  
Controlling Parameter ◽  
Electrical Analysis ◽  
Sectional Analysis

Abstract In this study, the resistance of FIB prepared vias was characterized by the Kelvin probe technique and their physical characteristics studied using cross-sectional analysis. Two domains of resistivity were isolated in relation to the ion beam current used for the deposition of the via metal (Pt). Also submicrometer vias were investigated on 4.2 µm deep metal lines of a BiCMOS aluminum based design and a CMOS 090 copper based one. It is shown that the controlling parameter is the shape and volume of the contact, and that the contact formation is favored by the amount of over-mill of the via into the metal line it will contact.

Non-invasive investigation of the cross-sectional solids distribution in CFB risers by X-ray computed tomography

2016 ◽  
Vol 297 ◽  
pp. 247-258 ◽  
Author(s):  
Timo Hensler ◽  
Markus Firsching ◽  
Juan Sebastian Gomez Bonilla ◽  
Thorsten Wörlein ◽  
Norman Uhlmann ◽  
...  
Keyword(s):  
Computed Tomography ◽  
Cross Sectional ◽  
X Ray ◽  
Non Invasive ◽  
X Ray Computed ◽  
The Cross
Sign in / Sign up

Export Citation Format

Share Document