Uniform And Large Area Deposition Of Diamond-Like Carbon Using Rf Source Ion Beam

1994 ◽  
Vol 354 ◽  
Author(s):  
Richard L.C. Wu ◽  
William Lanter ◽  
K. Miyoshi ◽  
S.L. Heidger ◽  
P. Bletzinger ◽  
...  
Keyword(s):  
Ion Beam ◽  
Computer Control ◽  
Ionic Species ◽  
Curved Surfaces ◽  
Rf Power ◽  
Large Area ◽  
Ion Energy ◽  
Gaseous Composition ◽  
Beam Currents ◽  
Area Deposition

AbstractWe have designed and constructed a large area ion beam apparatus to deposit DLC films onto 1000 cm2 surfaces with various geometries. The use of an efficient RF excited ion gun (13.56 MHz, 1 kW power, 50-3000 eV ion energy) with a diameter of 20 cm, enables us to generate various hydrocarbon ions with high ion beam currents, varying ionic species and less maintenance. The use of a four axis (Χ-ϒ-Θϒ-ΘZ) substrate scanner with computer control can produce uniform DLC films on large areas and curved surfaces. The effects of RF power, ion energy, gaseous composition, and total pressure on the properties of DLC have been systematically investigated.

Large Area Surface Treatment by Ion Beam Technology

1996 ◽  
Vol 438 ◽  
Author(s):  
R. L. C. Wu ◽  
W. Lanter
Keyword(s):  
Ion Beam ◽  
High Vacuum ◽  
Polycrystalline Diamond ◽  
Carbon Films ◽  
Ultra High Vacuum ◽  
Diamond Like Carbon ◽  
Chemical Compositions ◽  
Rf Power ◽  
Large Area ◽  
Ion Energy

AbstractAn ultra high vacuum ion beam system, consisting of a 20 cm diameter Rf excilted (13.56 MHz) ion gun and a four-axis substrate scanner, has been used to modify large surfaces (up to 1000 cm2) of various materials, including; infrared windows, silicon nitride, polycrystalline diamond, 304 and 316 stainless steels, 440C and M50 steels, aluminum alloys, and polycarbonates; by depositing different chemical compositions of diamond-like carbon films. The influences of ion energy, Rf power, gas composition (H2/CH4 , Ar/CH4 and O2/CH4/H2), on the diamond-like carbon characteristics has been studied. Particular attention was focused on adhesion, environmental effects, IR(3–12 μm) transmission, coefficient of friction, and wear factors under spacelike environments of diamond-like carbon films on various substrates. A quadrupole mass spectrometer was utilized to monitor the ion beam composition for quality control and process optimization.

Ion Beam Processing of Carbon Nitride Thin Films

1999 ◽  
Vol 585 ◽  
Author(s):  
Richard L.C. Wu ◽  
William C. Lanter ◽  
John Wrbranek ◽  
Peter B. Kosel ◽  
Charles A. Dejoseph
Keyword(s):  
Gas Flow ◽  
Carbon Nitride ◽  
Ion Beam ◽  
Substrate Surface ◽  
Gas Mixture ◽  
Rf Power ◽  
Ion Beam Sputtering ◽  
Graphite Target ◽  
Deposition Rates ◽  
Ion Energy

AbstractAmorphous carbon nitride films have been deposited by two different methods: (1) direct ion beam deposition from a gas mixture of CH4/N2; and (2) nitrogen ion beam sputtering of a graphite target. The chemical composition, deposition rate, chemical bond and optical properties of the as-deposited films were studied as a function of the process parameters. In the first technique, ions (CH3+, N2+, N+, NH4+, NH3+, NH2+, HCN+, CN+ and N2H2+) were directly impacted onto the substrate surface. The effects of RF power, CH4/N2 gas ratio, total gas flow, pressure, and ion energy on the film properties and deposition rates were studied. In the second technique, a flux of energetic nitrogen ions (N2+, N+), generated by N2 and N2/Ar plasmas, were used to directly sputter a graphite target. In this case, the effects of RF power, gas mixture (N2, N2/Ar), and ion energy on the film characteristics and deposition rates were determined. The properties of the films generated by the two alternative techniques were also compared.

Progress in Large Area Selective Silicon Deposition for TFT/LCD Applications

1994 ◽  
Vol 345 ◽  
Author(s):  
Jun H. Souk ◽  
Gregory N. Parsons
Keyword(s):  
High Performance ◽  
Hydrogen Plasma ◽  
Scale Up ◽  
Silicon Etching ◽  
Rf Power ◽  
Large Area ◽  
Selective Area ◽  
Process Scale Up ◽  
Process Scale ◽  
Area Deposition

AbstractWe have previously demonstrated selective area deposition of n+ microcrystalline silicon at 250°C using time modulated silane flow into a hydrogen plasma, and applied the technique to form high performance top-gate amorphous silicon TFT's with two mask sets. In this paper, we discuss issues related to process scale-up, including the effect of deposition rate on selectivity loss and non-uniformity. Uniformity can be achieved with higher growth rates by expanding the window for selectivity, and using conditions well within the process limits. We show that lower pressure and higher rf power can enlarge the window by enhancing the hydrogen-mediated silicon etching.

Angular‐resolved ion‐beam sputtering apparatus for large‐area deposition

1989 ◽  
Vol 60 (8) ◽  
pp. 2657-2665 ◽  
Author(s):  
T. Motohiro ◽  
H. Yamadera ◽  
Y. Taga
Keyword(s):  
Ion Beam ◽  
Ion Beam Sputtering ◽  
Large Area ◽  
Beam Sputtering ◽  
Area Deposition

Progress in large area Selective Silicon Deposition for TFT/LCD Applications

1994 ◽  
Vol 336 ◽  
Author(s):  
Jun H. Souk ◽  
Gregory N. Parsons
Keyword(s):  
High Performance ◽  
Hydrogen Plasma ◽  
Scale Up ◽  
Silicon Etching ◽  
Rf Power ◽  
Large Area ◽  
Selective Area ◽  
Process Scale Up ◽  
Process Scale ◽  
Area Deposition

We have previously demonstrated selective area deposition of n+ Macrocrystalline silicon at 250°C using time modulated silane flow into a hydrogen plasma, and applied the technique to form high performance top-gate Amorphous silicon TFT's with two mask sets. In this paper, we discuss issues related to process scale-up, including the effect of deposition rate on selectivity loss and non-uniformity. Uniformity can be achieved with higher growth rates by expanding the window for selectivity, and using conditions well within the process limits. We show that lower pressure and higher rf power can enlarge the window by enhancing the hydrogen-Mediated silicon etching.

Carbon Film Deposition On Silicon Using Low Energy Ion Beams

1991 ◽  
Vol 223 ◽  
Author(s):  
Qin Fuguang ◽  
Yao Zhenyu ◽  
Ren Zhizhang ◽  
S.-T. Lee ◽  
I. Bello ◽  
...  
Keyword(s):  
Photoelectron Spectroscopy ◽  
Ion Beam ◽  
Carbon Film ◽  
Carbon Films ◽  
Film Deposition ◽  
Ion Energy ◽  
Transmission Electron ◽  
Higher Temperature ◽  
Post Implantation ◽  
Beam Deposition

ABSTRACTDirect ion beam deposition of carbon films on silicon in the ion energy range of 15–500eV and temperature range of 25–800°C has been studied using mass selected C+ ions under ultrahigh vacuum. The films were characterized with X-ray photoelectron spectroscopy, Raman spectroscopy, and transmission electron microscopy and diffraction analysis. Films deposited at room temperature consist mainly of amorphous carbon. Deposition at a higher temperature, or post-implantation annealing leads to formation of microcrystalline graphite. A deposition temperature above 800°C favors the formation of microcrystalline graphite with a preferred orientation in the (0001) direction. No evidence of diamond formation was observed in these films.

Integrated Circuit Device Repair Using FIB System: Tips, Tricks, and Strategies

1999 ◽  
Author(s):  
K. N. Hooghan ◽  
K. S. Wills ◽  
P.A. Rodriguez ◽  
S.J. O’Connell
Keyword(s):  
Integrated Circuit ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Dead Reckoning ◽  
Physical Damage ◽  
Art Form ◽  
Metal Levels ◽  
Potential Damage ◽  
On Chip ◽  
Beam Currents

Abstract Device repair using Focused Ion Beam(FIB) systems has been in use for most of the last decade. Most of this has been done by people who have been essentially self-taught. The result has been a long learning curve to become proficient in device repair. Since a great deal of the problem is that documentation on this “art form” is found in papers from many different disciplines, this work attempts to summarize all of the available information under one title. The primary focus of FIB device repair is to ensure and maintain device integrity and subsequently retain market share while optimizing the use of the instrument, usually referred to as ‘beam time’. We describe and discuss several methods of optimizing beam time. First, beam time should be minimized while doing on chip navigation to reach the target areas. Several different approaches are discussed: dead reckoning, 3-point alignment, CAD-based navigation, and optical overlay. Second, after the repair areas are located and identified, the desired metal levels must be reached using a combination of beam currents and gas chemistries, and then filled up and strapped to make final connections. Third, cuts and cleanups must be performed as required for the final repair. We will discuss typical values of the beam currents required to maintain device integrity while concurrently optimizing repair time. Maintaining device integrity is difficult because of two potentially serious interactions of the FIB on the substrate: 1) since the beam consists of heavy metal ions (typically Gallium) the act of imaging the surface produces some physical damage; 2) the beam is positively charged and puts some charge into the substrate, making it necessary to use great care working in and around capacitors or active areas such as transistors, in order to avoid changing the threshold voltage of the devices. Strategies for minimizing potential damage and maximizing quality and throughput will be discussed.

Carbon Nitride Film Formation by Low Energy Positive and Negative Ion Beam Deposition

1996 ◽  
Vol 438 ◽  
Author(s):  
N. Tsubouchi ◽  
Y. Horino ◽  
B. Enders ◽  
A. Chayahara ◽  
A. Kinomura ◽  
...  
Keyword(s):  
Carbon Nitride ◽  
Rutherford Backscattering Spectrometry ◽  
Ion Beam ◽  
High Vacuum ◽  
Negative Ions ◽  
Low Energy ◽  
Ultra High Vacuum ◽  
Negative Ion ◽  
Nitride Film ◽  
Ion Energy

AbstractUsing a newly developed ion beam apparatus, PANDA (Positive And Negative ions Deposition Apparatus), carbon nitride films were prepared by simultaneous deposition of mass-analyzed low energy positive and negative ions such as C2-, N+, under ultra high vacuum conditions, in the order of 10−6 Pa on silicon wafer. The ion energy was varied from 50 to 400 eV. The film properties as a function of their beam energy were evaluated by Rutherford Backscattering Spectrometry (RBS), Fourier Transform Infrared spectroscopy (FTIR) and Raman scattering. From the results, it is suggested that the C-N triple bond contents in films depends on nitrogen ion energy.

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