Transient Enhanced Diffusion of Boron in Silicon: the Interstitial Flux

1996 ◽  
Vol 438 ◽  
Author(s):  
T. W. Simpson ◽  
R. D. Goldberg ◽  
I. V. Mitchell ◽  
J.-M. Baribeau
Keyword(s):  
Annealing Stage ◽  
Enhanced Diffusion ◽  
Boron Doped ◽  
Transient Enhanced Diffusion ◽  
The Relationship

AbstractDelta-doped boron marker layers in silicon have been used to test further the relationship between B transient enhanced diffusion (TED) and the flux of silicon interstitials released during the annealing stage following self implantation. We present new data which address a number of questions raised by the present models. We show that in our experiments bulk trapping of interstitials is significant only for low implant fluences (∼1012 cm −2). The origin of the observed diffusion-like profiles for the interstitial flux is instead found to lie in local trapping within the δ-doped layers themselves. Boron trapped in immobile clusters may be associated with Si interstitials in approximately a 1:1 ratio; nevertheless this trapping contribution alone may not entirely account for the observed gradient. We suggest that some part of the observed TED response with depth is attributable to local trapping of silicon interstitials within the boron doped layers.

Transient Enhanced Diffusion of Boron in Silicon:The Interstitial Flux

1996 ◽  
Vol 439 ◽  
Author(s):  
T. W. Simpson ◽  
R. D. Goldberg ◽  
I. V. Mitchell ◽  
J.-M. Baribeau
Keyword(s):  
Annealing Stage ◽  
Enhanced Diffusion ◽  
Boron Doped ◽  
Transient Enhanced Diffusion ◽  
The Relationship

AbstractDelta-doped boron marker layers in silicon have been used to test further the relationship between B transient enhanced diffusion (TED) and the flux of silicon interstitials released during the annealing stage following self implantation. We present new data which address a number of questions raised by the present models. We show that in our experiments bulk trapping of interstitials is significant only for low implant fluences (˜1012 cm2). The origin of the observed diffusion-like profiles for the interstitial flux is instead found to lie in local trapping within the δ-doped layers themselves. Boron trapped in immobile clusters may be associated with Si interstitials in approximately a 1:1 ratio; nevertheless this trapping contribution alone may not entirely account for the observed gradient. We suggest that some part of the observed TED response with depth is attributable to local trapping of silicon interstitials within the boron doped layers.

Investigation of Fluorine Effect on the Boron Diffusion by Mean of Boron Redistribution in Shallow Delta-doped Layers

2004 ◽  
Vol 810 ◽  
Author(s):  
A. Halimaoui ◽  
J. M. Hartmann ◽  
C. Laviron ◽  
R. El-Farhane ◽  
F. Laugier
Keyword(s):  
Point Defects ◽  
Depth Profiling ◽  
Boron Diffusion ◽  
Enhanced Diffusion ◽  
Boron Doped ◽  
Transient Enhanced Diffusion ◽  
Sims Depth Profiling

ABSTRACTPreviously published articles have shown that co-implanted fluorine reduces transient enhanced diffusion of boron. However, it is not yet elucidated whether this effect is due to interaction of fluorine with point-defects or boron atoms. In this work, we have used boron redistribution in a shallow Delta-doped Si structures in order to get some insights into the role of fluorine in the boron diffusion. The structures consisted of 3 boron-doped layers separated by 40nm-thick undoped silicon. The samples were given to Ge preamorphization and F co-implant. SIMS depth profiling was used to analyse boron redistribution after annealing. The results we obtained strongly suggest that fluorine is not interacting with point-defects. The reduction in boron TED is most probably due to boron-fluorine interaction.

Transient Enhanced Diffusion of Phosphorus and Defect Evolution in P+ Implanted Si

1999 ◽  
Vol 568 ◽  
Author(s):  
J. Li ◽  
P. Keys ◽  
J. Chen ◽  
M. E. Law ◽  
K. S. Jones ◽  
...  
Keyword(s):  
Enhanced Diffusion ◽  
Interstitial Concentration ◽  
Transient Enhanced Diffusion ◽  
Transmission Electron ◽  
Defect Evolution ◽  
Diffusion Phenomena ◽  
Dopant Atoms ◽  
Relationship Of ◽  
The Relationship ◽  
Secondary Ion

ABSTRACTContinuous scaling of device dimensions requires better understanding of non-equilibrium diffusion phenomena such as transient enhanced diffusion (TED). To this end, it is important to understand the relationship of the defect evolution with TED. Defect evolution in P+ implanted Si has been investigated by transmission electron microscopy (TEM). Secondary ion mass spectroscopy (SIMS) has been used to study phosphorus TED. These studies show that another type of defect, i.e. dot defects are present in P+implanted Si (100 keV, 1.OX104/cm2). The evolution of defects in P+ implants is compared with that in Si+ implants. P+ implants give rise to small dot defects mixed with {311} defects while Si+ implants give rise to only {311} defects. The dot defects and {311} defects in P+ implants dissolve faster than the {311} defects from Si+ implants. The interstitial concentration trapped in the dot defects and the {311} defects from P+ implants is slight lower than that from Si+ implants. Dot defects seem to have only a small role in phosphorus TED. Interaction of silicon interstitials emitted from the dissolution of {311} defects with phosphorus dopant atoms is believed to be the dominant driving force for the TED. There may also be a contribution from dissolution of non-visible phosphorus interstitial clusters (PIC's). Correlation of defect evolution and TED has been addressed.

scholarly journals Enhanced Diffusion of Dopants in Vacancy Supersaturation Produced by MeV Implantation

1997 ◽  
Vol 469 ◽  
Author(s):  
V. C. Venezia ◽  
T. E. Haynes ◽  
A. Agarwal ◽  
H. -J. Gossmann ◽  
D. J. Eaglesham
Keyword(s):  
Surface Layer ◽  
Surface Region ◽  
Silicon On Insulator ◽  
Rich Region ◽  
Near Surface ◽  
Enhanced Diffusion ◽  
Float Zone ◽  
Transient Enhanced Diffusion

ABSTRACTThe diffusion of Sb and B markers has been studied in vacancy supersaturations produced by MeV Si implantation in float zone (FZ) silicon and bonded etch-back silicon-on-insulator (BESOI) substrates. MeV Si implantation produces a vacancy supersaturated near-surface region and an interstitial-rich region at the projected ion range. Transient enhanced diffusion (TED) of Sb in the near surface layer was observed as a result of a 2 MeV Si+, 1×1016/cm2, implant. A 4× larger TED of Sb was observed in BESOI than in FZ silicon, demonstrating that the vacancy supersaturation persists longer in BESOI than in FZ. B markers in samples with MeV Si implant showed a factor of 10× smaller diffusion relative to markers without the MeV Si+ implant. This data demonstrates that a 2 MeV Si+ implant injects vacancies into the near surface region.

scholarly journals Self- and Dopant Diffusion in Extrinsic Boron Doped Isotopically Controlled Silicon Multilayer Structures

2002 ◽  
Vol 719 ◽  
Author(s):  
Ian D. Sharp ◽  
Hartmut A. Bracht ◽  
Hughes H. Silvestri ◽  
Samuel P. Nicols ◽  
Jeffrey W. Beeman ◽  
...  
Keyword(s):  
Multilayer Structure ◽  
Secondary Ion Mass Spectrometry ◽  
Diffusion Processes ◽  
Quantitative Description ◽  
Multilayer Structures ◽  
Dopant Diffusion ◽  
Enhanced Diffusion ◽  
Self Diffusion ◽  
Boron Doped ◽  
P Type

AbstractIsotopically controlled silicon multilayer structures were used to measure the enhancement of self- and dopant diffusion in extrinsic boron doped silicon. 30Si was used as a tracer through a multilayer structure of alternating natural Si and enriched 28Si layers. Low energy, high resolution secondary ion mass spectrometry (SIMS) allowed for simultaneous measurement of self- and dopant diffusion profiles of samples annealed at temperatures between 850°C and 1100°C. A specially designed ion-implanted amorphous Si surface layer was used as a dopant source to suppress excess defects in the multilayer structure, thereby eliminating transient enhanced diffusion (TED) behavior. Self- and dopant diffusion coefficients, diffusion mechanisms, and native defect charge states were determined from computer-aided modeling, based on differential equations describing the diffusion processes. We present a quantitative description of B diffusion enhanced self-diffusion in silicon and conclude that the diffusion of both B and Si is mainly mediated by neutral and singly positively charged self-interstitials under p-type doping. No significant contribution of vacancies to either B or Si diffusion is observed.

Ultra Shallow Junction Formation by B+/BF2+ Implantation at Energy of 0.5 KEV

1998 ◽  
Vol 532 ◽  
Author(s):  
M. Kase ◽  
Y Kikuchi ◽  
H. Niwa ◽  
T. Kimura
Keyword(s):  
Junction Depth ◽  
Shallow Junction ◽  
Enhanced Diffusion ◽  
Transient Enhanced Diffusion ◽  
Junction Formation

ABSTRACTThis paper describes ultra shallow junction formation using 0.5 keV B+/BF2+ implantation, which has the advantage of a reduced channeling tail and no transient enhanced diffusion. In the case of l × 1014 cm−2, 0.5 keV BF2 implantation a junction depth of 19 nm is achieved after RTA at 950°C.

Effects of Carbon Co-Implantation on Transient Enhanced Diffusion and Performances of the Phosphorus Doped Ultra-Shallow Junction Nano NMOSFET

2013 ◽  
Vol 284-287 ◽  
pp. 98-102
Author(s):  
Hung Yu Chiu ◽  
Yean Kuen Fang ◽  
Feng Renn Juang
Keyword(s):  
Cmos Technology ◽  
Shallow Junction ◽  
Enhanced Diffusion ◽  
Transient Enhanced Diffusion ◽  
Technology Applications ◽  
Implantation Process ◽  
Phosphorus Doped

The carbon (C) co-implantation and advanced flash anneal were employed to form the ultra shallow junction (USJ) for future nano CMOS technology applications. The effects of the C co-implantation process on dopant transient enhanced diffusion (TED) of the phosphorus (P) doped nano USJ NMOSFETs were investigated in details. The USJ NMOSFETs were prepared by a foundry’s 55 nano CMOS technology. Various implantation energies and doses for both C and P ions were employed. Results show the suppression of the TED is strongly dependent on both C and P implantation conditions. Besides, the mechanisms of P TED and suppression by C ion co-implantation were illustrated comprehensively with schematic models.

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