Transient Enhanced Diffusion of Phosphorus and Defect Evolution in P+ Implanted Si

1999 ◽  
Vol 568 ◽  
Author(s):  
J. Li ◽  
P. Keys ◽  
J. Chen ◽  
M. E. Law ◽  
K. S. Jones ◽  
...  
Keyword(s):  
Enhanced Diffusion ◽  
Interstitial Concentration ◽  
Transient Enhanced Diffusion ◽  
Transmission Electron ◽  
Defect Evolution ◽  
Diffusion Phenomena ◽  
Dopant Atoms ◽  
Relationship Of ◽  
The Relationship ◽  
Secondary Ion

ABSTRACTContinuous scaling of device dimensions requires better understanding of non-equilibrium diffusion phenomena such as transient enhanced diffusion (TED). To this end, it is important to understand the relationship of the defect evolution with TED. Defect evolution in P+ implanted Si has been investigated by transmission electron microscopy (TEM). Secondary ion mass spectroscopy (SIMS) has been used to study phosphorus TED. These studies show that another type of defect, i.e. dot defects are present in P+implanted Si (100 keV, 1.OX104/cm2). The evolution of defects in P+ implants is compared with that in Si+ implants. P+ implants give rise to small dot defects mixed with {311} defects while Si+ implants give rise to only {311} defects. The dot defects and {311} defects in P+ implants dissolve faster than the {311} defects from Si+ implants. The interstitial concentration trapped in the dot defects and the {311} defects from P+ implants is slight lower than that from Si+ implants. Dot defects seem to have only a small role in phosphorus TED. Interaction of silicon interstitials emitted from the dissolution of {311} defects with phosphorus dopant atoms is believed to be the dominant driving force for the TED. There may also be a contribution from dissolution of non-visible phosphorus interstitial clusters (PIC's). Correlation of defect evolution and TED has been addressed.

Phosphorus / Silicon Interstitial Annealing After Ion Implantation

2000 ◽  
Vol 610 ◽  
Author(s):  
P. H. Keys ◽  
R. Brindos ◽  
V. Krishnamoorthy ◽  
M. Puga-Lambers ◽  
K. S. Jones ◽  
...  
Keyword(s):  
Ion Implantation ◽  
Secondary Ion Mass Spectrometry ◽  
Extended Defects ◽  
Enhanced Diffusion ◽  
Transmission Electron ◽  
Initial Nucleation ◽  
Primary Damage ◽  
Dopant Atoms ◽  
Phosphorus Doped ◽  
Secondary Ion

AbstractThe release of interstitials from extended defects after ion implantation acts as a driving force behind transient enhanced diffusion (TED). Implantation of Si+ ions into regions of phosphorus-doped silicon provides experimental insight into the interaction of silicon interstitials and dopant atoms during primary damage annealing. The presence of phosphorus influences the morphology of secondary defects during initial nucleation. Transmission electron microscopy (TEM) is used to differentiate between defect types and quantify the interstitials trapped in extended defects. This analysis reveals that phosphorus results in a reduction of interstitials trapped in observable extended defects. The interstitial flux released from the implanted region is also affected by the phosphorus doping. This phenomenon is closely studied using secondary ion mass spectrometry (SIMS) to monitor diffusion enhancements of dopant layers. Shifts in diffused dopant profiles are correlated with the different morphologies of the extended defects and the decay of the silicon interstitial supersaturation. This correlation is used to understand the interaction of excess silicon interstitials with phosphorus atoms.

Effects of Concurrent Co or Ti Silicidation on Transient Diffusion and End-of-Range Damage in Phosphorus Implanted Silicon

1992 ◽  
Vol 262 ◽  
Author(s):  
J.W. Honeycutt ◽  
J. Ravi ◽  
G. A. Rozgonyi
Keyword(s):  
Secondary Ion Mass Spectrometry ◽  
Complete Removal ◽  
Dislocation Loops ◽  
Enhanced Diffusion ◽  
Depth Profiles ◽  
Enhanced Dissolution ◽  
Implantation Damage ◽  
Transmission Electron ◽  
Defect Behavior ◽  
Secondary Ion

ABSTRACTThe effects of Ti and Co silicidation on P+ ion implantation damage in Si have been investigated. After silicidation of unannealed 40 keV, 2×1015 cm-2 P+ implanted junctions by rapid thermal annealing at 900°C for 10–300 seconds, secondary ion mass spectrometry depth profiles of phosphorus in suicided and non-silicided junctions were compared. While non-silicided and TiSi2 suicided junctions exhibited equal amounts of transient enhanced diffusion behavior, the junction depths under COSi2 were significantly shallower. End-of-range interstitial dislocation loops in the same suicided and non-silicided junctions were studied by planview transmission electron microscopy. The loops were found to be stable after 900°C, 5 minute annealing in non-silicided material, and their formation was only slightly effected by TiSi2 or COSi2 silicidation. However, enhanced dissolution of the loops was observed under both TiSi2 and COSi2, with essentially complete removal of the defects under COSi2 after 5 minutes at 900°C. The observed diffusion and defect behavior strongly suggest that implantation damage induced excess interstitial concentrations are significantly reduced by the formation and presence of COSi2, and to a lesser extent by TiSi2. The observed time-dependent defect removal under the suicide films suggests that vacancy injection and/or interstitial absorption by the suicide film continues long after the suicide chemical reaction is complete.

HRTEM Study of Structure and Evolution of Highly Mismatched Heteroepitaxial Interface, GaSe/GaAs(100)

1998 ◽  
Vol 523 ◽  
Author(s):  
Z.R. Dai ◽  
S. R. Chegwidden ◽  
F. S. Ohuchi
Keyword(s):  
Thin Film ◽  
Intermediate Layer ◽  
Gaas Substrate ◽  
Structural Model ◽  
Rhombohedral Structure ◽  
Lattice Image ◽  
Thin Film System ◽  
Transmission Electron ◽  
Relationship Of ◽  
The Relationship

AbstractThe microstructural evolution of the GaSe/GaAs(100) thin film system was characterized by high resolution transmission electron microscopy (HRTEM). The relationship of crystallographic orientation between the GaSe thin film and the GaAs substrate is [011]GaAs ‖ [1100]GaSe/(100)GaAs ‖ (0001)GaSe, with the dominant polytype for the GaSe thin film being a γ-type which has a 3R-rhombohedral structure with R3m space group. An intermediate layer was observed between the GaAs substrate and the GaSe thin film, with a structure distinct from that of either GaAs or GaSe. The result of a fast Fourier transform (FFT) of the lattice image corresponding to the intermediate layer indicated that its crystal structure was associated with that of α-Ga2Se3. A new vacancy ordered structural model of β-Ga2Se3 was suggested.

Transient Enhanced Diffusion of Boron in Silicon:The Interstitial Flux

1996 ◽  
Vol 439 ◽  
Author(s):  
T. W. Simpson ◽  
R. D. Goldberg ◽  
I. V. Mitchell ◽  
J.-M. Baribeau
Keyword(s):  
Annealing Stage ◽  
Enhanced Diffusion ◽  
Boron Doped ◽  
Transient Enhanced Diffusion ◽  
The Relationship

AbstractDelta-doped boron marker layers in silicon have been used to test further the relationship between B transient enhanced diffusion (TED) and the flux of silicon interstitials released during the annealing stage following self implantation. We present new data which address a number of questions raised by the present models. We show that in our experiments bulk trapping of interstitials is significant only for low implant fluences (˜1012 cm2). The origin of the observed diffusion-like profiles for the interstitial flux is instead found to lie in local trapping within the δ-doped layers themselves. Boron trapped in immobile clusters may be associated with Si interstitials in approximately a 1:1 ratio; nevertheless this trapping contribution alone may not entirely account for the observed gradient. We suggest that some part of the observed TED response with depth is attributable to local trapping of silicon interstitials within the boron doped layers.

Ni/Si-Based Contacts to GaN: Thermally Activated Structural Transformations Leading to Ohmic Behavior

1998 ◽  
Vol 537 ◽  
Author(s):  
E. Kaminska ◽  
A. Piotrowska ◽  
J. Jasinski ◽  
J. Kozubowski ◽  
A. Barcz ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Heat Treatment ◽  
Secondary Ion Mass Spectrometry ◽  
Structural Transformations ◽  
Thermally Activated ◽  
Ohmic Behavior ◽  
Transmission Electron ◽  
Dopant Atoms ◽  
Ohmic Contact Formation ◽  
Secondary Ion

AbstractStructural transformations in Ni/Si-based contacts to GaN occurring under heat treatment have been studied using transmission electron microscopy and secondary ion mass spectrometry. Transition from non-ohmic to ohmic behavior correlates with reaction between Ni and Si, and decomposition of the initially formed interfacial Ni:Ga:N layer. Transport of dopant atoms from metallization into GaN testifies in favour of the SPR process of ohmic contact formation

Junction Depth Reduction of ion Implanted Boron in Silicon Through Fluorine ion Implantation

2000 ◽  
Vol 610 ◽  
Author(s):  
L. S. Robertson ◽  
P. N. Warnes ◽  
K. S. Jones ◽  
S. K. Earles ◽  
M. E. Law ◽  
...  
Keyword(s):  
Ion Implantation ◽  
Secondary Ion Mass Spectrometry ◽  
Chemical Species ◽  
Amorphous Layer ◽  
Experimental Conditions ◽  
Enhanced Diffusion ◽  
Transient Enhanced Diffusion ◽  
Transmission Electron ◽  
Species Effect ◽  
Boron Diffusivity

AbstractThe interaction between boron and excess silicon interstitials caused by ion implantation hinders the formation of ultra-shallow, low resistivity junctions. Previous studies have shown that fluorine reduces boron transient enhanced diffusion, however it is unclear whether this observed phenomenon is due to the fluorine interacting with the boron atoms or silicon self-interstitials. Amorphization of a n-type Czochralski wafer was achieved with a 70 keV Si+ implantation at a dose of 1×1015/cm2. The Si+ implant produced a 1500Å deep amorphous layer, which was then implanted with 1.12 keV 1×1015/cm2 B+. The samples were then implanted with a dose of 2×1015/cm2F+ at various energies ranging from 2 keV to 36 keV. Ellipsometry measurements showed no increase in the amorphous layer thickness from either the boron or fluorine implants. The experimental conditions allowed the chemical species effect to be studied independent of the implant damage caused by the fluorine implant. Post-implantation anneals were performed in a tube furnace at 750° C. Secondary ion mass spectrometry was used to monitor the dopant diffusion after annealing. Transmission electron microscopy (TEM) was used to study the end-of-range defect evolution. The addition of fluorine reduces the boron transient enhanced diffusion for all fluorine energies. It was observed that both the magnitude of the boron diffusivity and the concentration gradient of the boron profile vary as a function of fluorine energy.

Enhanced Boron Diffusion in Amorphous Silicon

2004 ◽  
Vol 810 ◽  
Author(s):  
J.M. Jacques ◽  
N. Burbure ◽  
K.S. Jones ◽  
M.E. Law ◽  
L.S. Robertson ◽  
...  
Keyword(s):  
Amorphous Silicon ◽  
Room Temperature ◽  
Solid Phase ◽  
Amorphous Layer ◽  
Boron Diffusion ◽  
Cross Sectional ◽  
Enhanced Diffusion ◽  
Transmission Electron ◽  
Variable Angle Spectroscopic Ellipsometry ◽  
Secondary Ion

ABSTRACTIn prior works, we demonstrated the phenomenon of fluorine-enhanced boron diffusion within self-amorphized silicon. Present studies address the process dependencies of low temperature boron motion within ion implanted materials utilizing a germanium amorphization. Silicon wafers were preamorphized with either 60 keV or 80 keV Ge+ at a dose of 1×1015 atoms/cm2. Subsequent 500 eV, 1×1015 atoms/cm211B+ implants, as well as 6 keV F+ implants with doses ranging from 1×1014 atoms/cm2 to 5×1015 atoms/cm2 were also done. Furnace anneals were conducted at 550°C for 10 minutes under an inert N2 ambient. Secondary Ion Mass Spectroscopy (SIMS) was utilized to characterize the occurrence of boron diffusion within amorphous silicon at room temperature, as well as during the Solid Phase Epitaxial Regrowth (SPER) process. Amorphous layer depths were verified through Cross-Sectional Transmission Electron Microscopy (XTEM) and Variable Angle Spectroscopic Ellipsometry (VASE). Boron motion within as-implanted samples is observed at fluorine concentrations greater than 1×1020 atoms/cm3. The magnitude of the boron motion scales with increasing fluorine dose and concentration. During the initial stages of SPER, boron was observed to diffuse irrespective of the co-implanted fluorine dose. Fluorine enhanced diffusion at room temperature does not appear to follow the same process as the enhanced diffusion observed during the regrowth process.

Behaviors of TiN Nanoparticles in Mn18Cr2 Steel

2011 ◽  
Vol 117-119 ◽  
pp. 897-900
Author(s):  
Yan Li ◽  
Jing Pei Xie ◽  
Hui Wu Yu ◽  
Wen Yan Wang ◽  
Xin Hai Shao ◽  
...  
Keyword(s):  
Manganese Steel ◽  
High Manganese Steel ◽  
Tin Nanoparticles ◽  
Transmission Electron ◽  
Ε Martensite ◽  
Two Phases ◽  
Relationship Of ◽  
Existing Form ◽  
The Relationship

Mn18Cr2 steel is one of austenitic deformation strengthening steel. The existing form of TiN and its influence on the austenitic structure in the steel by adding small amounts of TiN nanoparticles are discussed in this study, which may provide some advices to explore new way to strengthen high manganese steel. The microstructures of Mn18Cr2 steel added small amounts of TiN nanoparticles are observed by Transmission Electron Microscopy (TEM). The results show that TiN nanoparticles exist in austenite and there have a very good match interface between the two phases, the crystal face relationship are {220}γ//{220}N, {422}γ//{422}N, (111)γ //(200)N , orientation relationship are <110>γ// <110>N, <211>γ//<211>N, [112]γ // [011]N, moreover, the relationship of (111)γ and (200)N is not only parallel but also coherent. Meanwhile, there are many high density dislocations, a small amount of stacking faults, twins and ε-martensite in the austenite due to the role of TiN nanoparticles.

Dopant segregation to {311} defects during low temperature annealing

1999 ◽  
Vol 568 ◽  
Author(s):  
Kenji Taniguchi ◽  
Tomoya Saito ◽  
Jianxin Xia ◽  
Ryangsu Kim ◽  
Takenori Aoki ◽  
...  
Keyword(s):  
Low Temperature ◽  
Thermal Annealing ◽  
The Self ◽  
Dopant Segregation ◽  
Enhanced Diffusion ◽  
Interstitial Concentration ◽  
Boron Segregation ◽  
Low Temperature Annealing ◽  
Transient Enhanced Diffusion

ABSTRACTBoron segregation to {311} defects and transient enhanced diffusion (TED) of boron atoms during thermal annealing were investigated in detail using implanted superlattice and Si bulk wafers. We observed that (1)boron atoms segregate to {311} defects during low temperature annealing, (2){311} defects were formed in the area where the self-interstitial concentration exceeds 3×1017cm3, (3)free self-interstitials in the region beyond the implanted range causes initial rapid enhanced diffusion prior to the onset of normal TED.

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