An Electronic Stopping Power Model in Single-Crystal Silicon from a Few KeV to Several MeV

1996 ◽  
Vol 438 ◽  
Author(s):  
S. J. Morris ◽  
B. Obradovic ◽  
S.-H. Yang ◽  
A. F. Tasch ◽  
L. Rubin
Keyword(s):  
Single Crystal ◽  
Damage Accumulation ◽  
Single Crystal Silicon ◽  
Crystallographic Direction ◽  
Stopping Power ◽  
Power Model ◽  
Crystal Silicon ◽  
Wide Range ◽  
Physically Based ◽  
Electronic Stopping Power

AbstractAn electronic stopping power model for boron, arsenic, and phosphorus ion implantation into single-crystal Si is reported over the energy range from a few keV to several MeV, for both offand on-axis implant angles relative to the <100> crystallographic direction. Combined with previously developed models for damage accumulation, this model allows physically-based simulation of 3-D profiles over an extremely wide range of implant conditions. In particular, this allows modeling of MeV implants which are being used more and more frequently.

An Electronic Stopping Power Model in Single-Crystal Silicon From a Few KeV to Several MeV

1996 ◽  
Vol 439 ◽  
Author(s):  
S. J. Morris ◽  
B. Obradovic ◽  
S. -H. Yang ◽  
A. F. Tasch ◽  
L. Rubin
Keyword(s):  
Single Crystal ◽  
Damage Accumulation ◽  
Single Crystal Silicon ◽  
Crystallographic Direction ◽  
Stopping Power ◽  
Power Model ◽  
Crystal Silicon ◽  
Wide Range ◽  
Physically Based ◽  
Electronic Stopping Power

AbstractAn electronic stopping power model for boron, arsenic, and phosphorus ion implantation into single-crystal Si is reported over the energy range fr'om a few keV to several MeV, for both offand on-axis implant angles relative to the <100> crystallographic direction. Combined with previously developed models for damage accumulation, this model allows physically-based simulation of 3-D profiles over an extremely wide range of implant conditions. In particular, this allows modeling of MeV implants which are being used more and more frequently.

A New Local Electronic Stopping Model for the Monte Carlo Simulation of Arsenic Ion Implantation into (100) Single-Crystal Silicon

1995 ◽  
Vol 389 ◽  
Author(s):  
S.-H. Yang ◽  
S. Morris ◽  
S. Tian ◽  
K. Parab ◽  
A. F. Tasch ◽  
...  
Keyword(s):  
Monte Carlo ◽  
Ion Implantation ◽  
Single Crystal ◽  
Density Functional ◽  
Single Crystal Silicon ◽  
Stopping Power ◽  
Crystal Silicon ◽  
Electronic Density ◽  
New Model ◽  
Electronic Stopping Power

ABSTRACTIn this paper is reported the development and implementation of a new local electronic stopping model for arsenic ion implantation into single-crystal silicon. Monte Carlo binary collision (MCBC) models are appropriate for studying channeling effects since it is possible to include the crystal structure in the simulators. One major inadequacy of existing MCBC codes is that the electronic stopping of implanted ions is not accurately and physically accounted for, although it is absolutely necessary for predicting the channeling tails of the profiles. In order to address this need, we have developed a new electronic stopping power model using a directionally dependent electronic density (to account for valence bonding) and an electronic stopping power based on the density functional approach. This new model has been implemented in the MCBC code, UT-MARLOWE The predictions of UT-MARLOWE with this new model are in very good agreement with experimentally-measured secondary ion mass spectroscopy (SIMS) profiles for both on-axis and off-axis arsenic implants in the energy range of 15-180 keV.

scholarly journals Possible causes of electrical resistivity distribution inhomogeneity in Czochralski grown single crystal silicon

2019 ◽  
Vol 5 (1) ◽  
pp. 27-32 ◽  
Author(s):  
Svetlana P. Kobeleva ◽  
Ilya M. Anfimov ◽  
Vladimir S. Berdnikov ◽  
Tatyana V. Kritskaya
Keyword(s):  
Electrical Resistivity ◽  
Single Crystal ◽  
Single Crystals ◽  
Crystallization Front ◽  
Single Crystal Silicon ◽  
Theoretical Interpretation ◽  
Azimuthal Direction ◽  
Crystal Silicon ◽  
Wide Range ◽  
Possible Cause

Electrical resistivity distribution maps have been constructed for single crystal silicon wafers cut out of different parts of Czochralski grown ingots. The general inhomogeneity of the wafers has proven to be relatively high, the resistivity scatter reaching 1–3 %. Two electrical resistivity distribution inhomogeneity types have been revealed: azimuthal and radial. Experiments have been carried out for crystal growth from transparent simulating fluids with hydrodynamic and thermophysical parameters close to those for Czochralski growth of silicon single crystals. We show that a possible cause of azimuthal electrical resistivity distribution inhomogeneity is the swirl-like structure of the melt under the crystallization front (CF), while a possible cause of radial electrical resistivity distribution inhomogeneity is the CF curvature. In a specific range of the Grashof, Marangoni and Reynolds numbers which depend on the ratio of melt height and growing crystal radius, a system of well-developed radially oriented swirls may emerge under the rotating CF. In the absence of such swirls the melt is displaced from under the crystallization front in a homogeneous manner to form thermal and concentration boundary layers which are homogeneous in azimuthal direction but have clear radial inhomogeneity. Once swirls emerge the melt is displaced from the center to the periphery, and simultaneous fluid motion in azimuthal direction occurs. The overall melt motion becomes helical as a result. The number of swirls (two to ten) agrees with the number of azimuthally directed electrical resistivity distribution inhomogeneities observed in the experiments. Comparison of numerical simulation results in a wide range of Prandtl numbers with the experimental data suggests that the phenomena observed in transparent fluids are universal and can be used for theoretical interpretation of imperfections in silicon single crystals.

scholarly journals Simulation of Phosphorus Implantation into Silicon with a Single Parameter Electronic Stopping Power Model

1998 ◽  
Vol 09 (03) ◽  
pp. 459-470 ◽  
Author(s):  
David Cai ◽  
Charles M. Snell ◽  
Keith M. Beardmore ◽  
Niels Grønbech-Jensen
Keyword(s):  
Fine Tuning ◽  
Stopping Power ◽  
Power Model ◽  
Physical Processes ◽  
Wide Range ◽  
The One ◽  
Electron Radius ◽  
Charge Formula ◽  
Electronic Stopping Power ◽  
Dopant Profiles

We simulate dopant profiles for phosphorus implantation into silicon using a new model for electronic stopping power. In this model, the electronic stopping power is factorized into a globally averaged effective charge [Formula: see text], and a local charge density dependent electronic stopping power for a proton. There is only a single adjustable parameter in the model, namely the one electron radius [Formula: see text] which controls [Formula: see text]. By fine tuning this parameter, we obtain excellent agreement between simulated dopant profiles and the SIMS data over a wide range of energies for the channeling case. Our work provides a further example of implant species, in addition to boron and arsenic, to verify the validity of the electronic stopping power model and to illustrate its generality for studies of physical processes involving electronic stopping.

Modeling of Boron Diffusion in Polysilicon-On-Silicon Layers

1992 ◽  
Vol 283 ◽  
Author(s):  
Akif Sultan ◽  
Shubneesh Batra ◽  
Melvyn Lobo ◽  
Keunhyung Park ◽  
Sanjay Banerjee
Keyword(s):  
Single Crystal ◽  
Single Crystal Silicon ◽  
Boron Diffusion ◽  
Crystal Silicon ◽  
Polysilicon Film ◽  
Wide Range ◽  
Polysilicon Layer ◽  
Single Crystal Silicon Substrate ◽  
Effective Diffusivities ◽  
Concentration Dependent Diffusivity

ABSTRACTIn the present study we have modeled the diffusion of boron in single crystal silicon from an ion-implanted polysilicon film deposited on a single crystal silicon substrate. Modeling has been done for both BF2 and boron implants in the polysilicon layer. A new phenomenological model for a diffusivity has been implemented in the PEPPER simulation program using an effective concentration-dependent diffusivity approach. The effective diffusivities of boron in single crystal silicon have been extracted using Boltzmann-Matano analysis. The modeling has been implemented for a wide range of furnace anneal conditions (800°C to 950°C, from 30 min. to 6 hours), and implant conditions (BF2 doses varied from 5×1015 to 2×10'16 cm-2 at 70 keV, boron dose of 5×1015 cm-2 at 20 keV).

Microstructure of Swift Heavy Ion Irradiated SiC, Si3N4 and AlN

2000 ◽  
Vol 650 ◽  
Author(s):  
S.J. Zinkle ◽  
J.W. Jones ◽  
V.A. Skuratov
Keyword(s):  
Room Temperature ◽  
Single Crystal Silicon ◽  
Heavy Ion ◽  
Stopping Power ◽  
Crystal Silicon ◽  
Swift Heavy Ion ◽  
Transmission Electron ◽  
Track Formation ◽  
Temperature Irradiation ◽  
Electronic Stopping Power

ABSTRACTCross-section transmission electron microscopy was used to investigate the microstructure of single crystal silicon carbide and polycrystalline silicon nitride and aluminum nitride following room temperature irradiation with either 245 MeV Kr or 710 MeV Bi ions. The fluences ranged from 1×1012/cm2 (single track regime) to 1×1013/cm2. Ion track formation was observed in the Bi ion-irradiated Si3N4 specimen in regions where the electronic stopping power exceeded a critical value of ∼15 keV/nm (depths <24 μm). Ion track formation was not observed at any depth in 245 MeV Kr ion-irradiated Si3N4, in which the maximum electronic stopping power was 14.5 keV/nm. There was no evidence for track formation in either SiC or AlN irradiated with 710 MeV Bi ions, which indicates that the threshold electronic stopping power for track formation in these two ceramics is >34 keV/nm. The high resistance of SiC and AlN to track formation may be due to their high thermal conductivity, but further study is needed to quantitatively evaluate the suitability of the various track formation models.

scholarly journals A Temperature-Compensated Single-Crystal Silicon-on-Insulator (SOI) MEMS Oscillator with a CMOS Amplifier Chip

Micromachines ◽  
2018 ◽  
Vol 9 (11) ◽  
pp. 559 ◽  
Author(s):  
Mohammad Islam ◽  
Ran Wei ◽  
Jaesung Lee ◽  
Yong Xie ◽  
Soumyajit Mandal ◽  
...  
Keyword(s):  
Single Crystal ◽  
Temperature Compensation ◽  
Single Crystal Silicon ◽  
Silicon On Insulator ◽  
Sensor Nodes ◽  
Time Range ◽  
Crystal Silicon ◽  
Wide Range ◽  
Mems Oscillator ◽  
Averaging Time

Self-sustained feedback oscillators referenced to MEMS/NEMS resonators have the potential for a wide range of applications in timing and sensing systems. In this paper, we describe a real-time temperature compensation approach to improving the long-term stability of such MEMS-referenced oscillators. This approach is implemented on a ~26.80 kHz self-sustained MEMS oscillator that integrates the fundamental in-plane mode resonance of a single-crystal silicon-on-insulator (SOI) resonator with a programmable and reconfigurable single-chip CMOS sustaining amplifier. Temperature compensation using a linear equation fit and look-up table (LUT) is used to obtain the near-zero closed-loop temperature coefficient of frequency (TCf) at around room temperature (~25 °C). When subject to small temperature fluctuations in an indoor environment, the temperature-compensated oscillator shows a >2-fold improvement in Allan deviation over the uncompensated counterpart on relatively long time scales (averaging time τ > 10,000 s), as well as overall enhanced stability throughout the averaging time range from τ = 1 to 20,000 s. The proposed temperature compensation algorithm has low computational complexity and memory requirement, making it suitable for implementation on energy-constrained platforms such as Internet of Things (IoT) sensor nodes.

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