Modeling of Boron Diffusion in Polysilicon-On-Silicon Layers

1992 ◽  
Vol 283 ◽  
Author(s):  
Akif Sultan ◽  
Shubneesh Batra ◽  
Melvyn Lobo ◽  
Keunhyung Park ◽  
Sanjay Banerjee
Keyword(s):  
Single Crystal ◽  
Single Crystal Silicon ◽  
Boron Diffusion ◽  
Crystal Silicon ◽  
Polysilicon Film ◽  
Wide Range ◽  
Polysilicon Layer ◽  
Single Crystal Silicon Substrate ◽  
Effective Diffusivities ◽  
Concentration Dependent Diffusivity

ABSTRACTIn the present study we have modeled the diffusion of boron in single crystal silicon from an ion-implanted polysilicon film deposited on a single crystal silicon substrate. Modeling has been done for both BF2 and boron implants in the polysilicon layer. A new phenomenological model for a diffusivity has been implemented in the PEPPER simulation program using an effective concentration-dependent diffusivity approach. The effective diffusivities of boron in single crystal silicon have been extracted using Boltzmann-Matano analysis. The modeling has been implemented for a wide range of furnace anneal conditions (800°C to 950°C, from 30 min. to 6 hours), and implant conditions (BF2 doses varied from 5×1015 to 2×10'16 cm-2 at 70 keV, boron dose of 5×1015 cm-2 at 20 keV).

scholarly journals Possible causes of electrical resistivity distribution inhomogeneity in Czochralski grown single crystal silicon

2019 ◽  
Vol 5 (1) ◽  
pp. 27-32 ◽  
Author(s):  
Svetlana P. Kobeleva ◽  
Ilya M. Anfimov ◽  
Vladimir S. Berdnikov ◽  
Tatyana V. Kritskaya
Keyword(s):  
Electrical Resistivity ◽  
Single Crystal ◽  
Single Crystals ◽  
Crystallization Front ◽  
Single Crystal Silicon ◽  
Theoretical Interpretation ◽  
Azimuthal Direction ◽  
Crystal Silicon ◽  
Wide Range ◽  
Possible Cause

Electrical resistivity distribution maps have been constructed for single crystal silicon wafers cut out of different parts of Czochralski grown ingots. The general inhomogeneity of the wafers has proven to be relatively high, the resistivity scatter reaching 1–3 %. Two electrical resistivity distribution inhomogeneity types have been revealed: azimuthal and radial. Experiments have been carried out for crystal growth from transparent simulating fluids with hydrodynamic and thermophysical parameters close to those for Czochralski growth of silicon single crystals. We show that a possible cause of azimuthal electrical resistivity distribution inhomogeneity is the swirl-like structure of the melt under the crystallization front (CF), while a possible cause of radial electrical resistivity distribution inhomogeneity is the CF curvature. In a specific range of the Grashof, Marangoni and Reynolds numbers which depend on the ratio of melt height and growing crystal radius, a system of well-developed radially oriented swirls may emerge under the rotating CF. In the absence of such swirls the melt is displaced from under the crystallization front in a homogeneous manner to form thermal and concentration boundary layers which are homogeneous in azimuthal direction but have clear radial inhomogeneity. Once swirls emerge the melt is displaced from the center to the periphery, and simultaneous fluid motion in azimuthal direction occurs. The overall melt motion becomes helical as a result. The number of swirls (two to ten) agrees with the number of azimuthally directed electrical resistivity distribution inhomogeneities observed in the experiments. Comparison of numerical simulation results in a wide range of Prandtl numbers with the experimental data suggests that the phenomena observed in transparent fluids are universal and can be used for theoretical interpretation of imperfections in silicon single crystals.

Electrical Properties of Polycrystalline-Silicon Thin Films for VLSI

1986 ◽  
Vol 71 ◽  
Author(s):  
T I Kamins
Keyword(s):  
Electrical Properties ◽  
Integrated Circuits ◽  
Single Crystal ◽  
Grain Boundaries ◽  
Polycrystalline Silicon ◽  
Crystalline Silicon ◽  
Single Crystal Silicon ◽  
Active Regions ◽  
Crystal Silicon ◽  
Polysilicon Film

AbstractThe electrical properties of polycrystalline silicon differ from those of single-crystal silicon because of the effect of grain boundaries. At low and moderate dopant concentrations, dopant segregation to and carrier trapping at grain boundaries reduces the conductivity of polysilicon markedly compared to that of similarly doped single-crystal silicon. Because the properties of moderately doped polysilicon are limited by grain boundaries, modifying the carrier traps at the grain boundaries by introducing hydrogen to saturate dangling bonds improves the conductivity of polysilicon and allows fabrication of moderate-quality transistors with their active regions in the polycrystalline films. Removing the grain boundaries by melting and recrystallization allows fabrication of high-quality transistors. When polysilicon is used as an interconnecting layer in integrated circuits, its limited conductivity can degrade circuit performance. At high dopant concentrations, the active carrier concentration is limited by the solid solubility of the dopant species in crystalline silicon. The current through oxide grown on polysilicon can be markedly higher than that on oxide of similar thickness grown on singlecrystal silicon because the rough surface of a polysilicon film enhances the local electric field in oxide thermally grown on it. Consequently, the structure must be controlled to obtain reproducible conduction through the oxide. The differences in the behavior of polysilicon and single-crystal silicon and the limited electrical conductivity in polysilicon are having a greater impact on integrated circuits as the feature size decreases and the number of devices on a chip increases in the VLSI era.

An Electronic Stopping Power Model in Single-Crystal Silicon from a Few KeV to Several MeV

1996 ◽  
Vol 438 ◽  
Author(s):  
S. J. Morris ◽  
B. Obradovic ◽  
S.-H. Yang ◽  
A. F. Tasch ◽  
L. Rubin
Keyword(s):  
Single Crystal ◽  
Damage Accumulation ◽  
Single Crystal Silicon ◽  
Crystallographic Direction ◽  
Stopping Power ◽  
Power Model ◽  
Crystal Silicon ◽  
Wide Range ◽  
Physically Based ◽  
Electronic Stopping Power

AbstractAn electronic stopping power model for boron, arsenic, and phosphorus ion implantation into single-crystal Si is reported over the energy range from a few keV to several MeV, for both offand on-axis implant angles relative to the <100> crystallographic direction. Combined with previously developed models for damage accumulation, this model allows physically-based simulation of 3-D profiles over an extremely wide range of implant conditions. In particular, this allows modeling of MeV implants which are being used more and more frequently.

scholarly journals Communication—Electrodeposition of Indium Directly on Silicon

2022 ◽  
Author(s):  
Anica Neumann ◽  
Olivia Schneble ◽  
Emily Warren
Keyword(s):  
Single Crystal ◽  
Silicon Substrate ◽  
Low Temperatures ◽  
Seed Layer ◽  
Direct Contact ◽  
Single Crystal Silicon ◽  
Vapor Liquid Solid ◽  
Crystal Silicon ◽  
Single Crystal Silicon Substrate ◽  
Direct Electrodeposition

Abstract Direct electrodeposition of indium onto silicon paves the way for advances in microelectronics, photovoltaics, and optoelectronics. Indium is generally electrodeposited onto silicon utilizing a physically or thermally deposited metallic seed layer. Eliminating this layer poses benefits in microelectronics by reducing resistive interfaces and in vapor-liquid-solid conversion to III-V material by allowing direct contact to the single-crystal silicon substrate for epitaxial conversion. We investigated conditions to directly electrodeposit indium onto n-type Si(100). We show that a two-step galvanostatic plating at low temperatures can consistently produce smooth, continuous films of indium over large areas, in bump morphologies, and conformally into inverted pyramids.

Micromechanical and tribological characterization of doped single-crystal silicon and polysilicon films for microelectromechanical systems devices

1997 ◽  
Vol 12 (1) ◽  
pp. 54-63 ◽  
Author(s):  
Bharat Bhushan ◽  
Xiaodong Li
Keyword(s):  
Single Crystal ◽  
Microelectromechanical Systems ◽  
Single Crystal Silicon ◽  
Crystal Silicon ◽  
Polysilicon Film ◽  
Type Silicon ◽  
Boron Doped ◽  
Polysilicon Films ◽  
Tribological Characterization

Microelectromechanical systems (MEMS) devices are made of doped single-crystal silicon, LPCVD polysilicon films, and other ceramic films. Very little is understood about tribology and mechanical characterization of these materials on micro- to nanoscales. Micromechanical and tribological characterization of p-type (lightly boron-doped) single-crystal silicon (referred to as “undoped”), p+-type (boron doped) single-crystal silicon, polysilicon bulk, and n+-type (phosphorous doped) LPCVD polysilicon films have been carried out. Hardness, elastic modulus, and scratch resistance of these materials were measured by nanoindentation and microscratching using a nanoindenter. Friction and wear properties were measured using an accelerated ball-on-flat tribometer. It is found that the undoped silicon and polysilicon bulk as well as n+-type polysilicon film exhibit higher hardness and elastic modulus than the p+-type silicon. The polysilicon bulk and n+-type polysilicon film exhibit the lowest friction and highest resistance to scratch and wear followed by the undoped silicon and with the poorest behavior of the p+-type silicon. During scratching, the p+-type silicon deforms like a ductile metal.

Diffusion of Boron from Polysilicon at High Concentrations

1984 ◽  
Vol 36 ◽  
Author(s):  
R. F. Lever ◽  
B. Garben ◽  
C. M. Hsieh ◽  
W. A. Orr Arienzo
Keyword(s):  
Single Crystal ◽  
Doping Level ◽  
Crystal Surface ◽  
Single Crystal Silicon ◽  
Boron Diffusion ◽  
Crystal Silicon ◽  
High Boron ◽  
High Concentrations ◽  
Diffusion Simulation ◽  
Diffusion Profiles

ABSTRACTBoron diffusion profiles in single crystal silicon from highly doped polysilicon sources have been measured using SIMS after diffusion at 950°C for various times. These data have been analyzed to determine D(c) of boron in the single crystal. It is ncrmally assumed that at high boron concentrations D increases linearly with concentration. However, the shape of these profiles indicates that for a polysilicon source, this behavior does not appear to hold. Using Bolzmann-Matano analysis, D(c) was found to be insensitive to boron concentrations above 3.0E19 atoms/cm3. The results of this analysis were confirmed by using them as input to a diffusion simulation computer program and excellent agreement with the experimental profiles was obtained. The value of D was found to be unusually high at all concentrations in the single crystal and increased almost linearly with the doping level of the polysilicon. The effect of the furnace ramp-down cycle on the profiles near the crystal surface have also been investigated.

Measurement of the native oxide thickness on a reference relief pitch structure on a single-crystal silicon substrate

2013 ◽  
Vol 42 (2) ◽  
pp. 99-101
Author(s):  
V. P. Gavrilenko ◽  
A. A. Kuzin ◽  
A. Yu. Kuzin ◽  
A. A. Kuz’min ◽  
V. B. Mityukhlyaev ◽  
...  
Keyword(s):  
Single Crystal ◽  
Silicon Substrate ◽  
Single Crystal Silicon ◽  
Oxide Thickness ◽  
Native Oxide ◽  
Crystal Silicon ◽  
Pitch Structure ◽  
Single Crystal Silicon Substrate
Sign in / Sign up

Export Citation Format

Share Document