Piezoelectric Characterization of Bulk and Thin Film Ferroelectric Materials using Fiber Optics

1996 ◽  
Vol 433 ◽  
Author(s):  
J.T. Dawley ◽  
G. Teowee ◽  
B.J.J. Zelinski ◽  
D.R. Uhlmann
Keyword(s):  
Thin Film ◽  
Fiber Optics ◽  
Piezoelectric Properties ◽  
Piezoelectric Effect ◽  
Ferroelectric Materials ◽  
Data Sets ◽  
Ceramic Thin Films ◽  
Optical Lever ◽  
Converse Piezoelectric Effect

AbstractIn this study, the use of a fiber optic technique for the measurement of the piezoelectric properties of ferroelectric bulk and thin film samples was investigated. The strain and piezoelectric properties (namely the d33 coefficients) were measured using the MTI-2000 Fotonic Sensor, which uses the principle of the optical lever to resolve very small changes in sample displacement (1 Å). Using this technique, we were able to detect the very small strains associated with the converse piezoelectric effect for PVDF films and bulk PZT samples, and correlate the results with data acquired from direct piezoelectric effect measurement. Comparison of the data sets prove that the optical lever would be a useful optical technique for measuring of the d33 values of ceramic thin films, such as BaTiO3, ZnO, and PZT.

Experimental Investigation on the Use of Photostrictive Optical Actuator for MEMS Devices and Verification With the FEA Modeling Results

2011 ◽  
Author(s):  
Mosfequr Rahman ◽  
Masud Nawaz ◽  
John E. Jackson
Keyword(s):  
Thin Film ◽  
Lead Zirconate Titanate ◽  
Piezoelectric Effect ◽  
Photovoltaic Effect ◽  
Research Work ◽  
High Energy ◽  
Ferroelectric Ceramics ◽  
Control Signals ◽  
Fea Modeling ◽  
Converse Piezoelectric Effect

Photostrictive materials are lanthanum-modified lead zirconate titanate (Pb, La)(Zr, Ti) O3 ceramics doped with WO3, called PLZT, exhibit large photostriction under uniform illumination of high-energy light. Photostrictive materials are ferrodielectric ceramics that have a photostrictive effect. Photostriction arises from a superposition of the photovoltaic effect, i.e. the generation of large voltage from the irradiation of light, and the converse-piezoelectric effect, i.e. expansion or contraction under the voltage applied. When non-centrosymmetric materials, such as ferroelectric single crystals or polarized ferroelectric ceramics, are uniformly illuminated, a high voltage, considerably exceeding the band gap energy, is generated. Along with this photovoltage, mechanical strain is also induced due to the converse piezoelectric effect. Photostrictive materials offer the potential for actuators with many advantages over traditional transducing electromechanical actuators made of shape memory alloys and electroceramics (piezoelectric and electrostrictive). Drawback of traditional actuators is that they require hard-wired connections to transmit the control signals which introduce electrical noise into the control signals; on the other hand PLZT actuators offer non-contact actuation, remote control, and immune from electric/magnetic disturbances. Some experimental research has been conducted on the use of PLZT materials, such as optical motor as an electromechanical device suitable for miniaturization, micro-waking machine, photo driven relay device using PLZT bimorphs and high speed (less than 10 ns), low-voltage, low power consumption optical switch. Authors have developed a computational method and implemented in an in-house finite element code which will be useful for designing systems incorporating thin film photostrictive actuators. The purpose of this current research work is to design and develop an experimental test set-up for photostriction effect measurement of PLZT thin film of different thickness, size and location on silicon wafer as smart beams, which may be useful for various MEMS device as optical actuator. The experimental results will be verified by comparing with the FEA modeling results.

Fiber-optics Low-coherence Integrated Metrology for In-Situ Non-contact Characterization of Wafer Curvature for Wafers Having Non-uniform Substrate and Thin Film Thickness

2005 ◽  
Vol 875 ◽  
Author(s):  
Wojciech J. Walecki ◽  
Alexander Pravdivtsev ◽  
Kevin Lai ◽  
Manuel Santos ◽  
Georgy Mikhaylov ◽  
...  
Keyword(s):  
Thin Film ◽  
Construction Industry ◽  
Fiber Optics ◽  
Fiber Optic ◽  
Flat Panel ◽  
Thin Film Thickness ◽  
Low Coherence ◽  
Low Coherence Interferometry

Abstract. We propose novel stress metrology technique for measurement of local values stress tensor components in the coated wafers. New metrology is based on fiber-optic low coherence interferometry and can be applied to study stress not only in semicondiuctor wafers but in wide variety applications spanning from semiconductor to construction industry where measurements of plates covered by thin film encountered in flat panel displayes, solar cells, modern windows.

The study of converse piezoelectric-effect of ZnO thin film

2019 ◽  
Author(s):  
Suman Guchhait ◽  
Aquil Ahmad ◽  
H. Aireddy ◽  
A. K. Das
Keyword(s):  
Thin Film ◽  
Piezoelectric Effect ◽  
Zno Thin Film ◽  
Converse Piezoelectric Effect

Reaction couples of ceramic thin films prepared by CVD

1988 ◽  
Vol 46 ◽  
pp. 798-799
Author(s):  
D.W. Susnitzky ◽  
S.R. Summerfelt ◽  
C.B. Carter
Keyword(s):  
Thin Film ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Deposition Process ◽  
Solid State Reactions ◽  
Spatial Distributions ◽  
Diffusion Couples ◽  
Kinetics Studies ◽  
Ceramic Thin Films ◽  
Initial Stage

Solid-state reactions have traditionally been studied in the form of diffusion couples. This ‘bulk’ approach has been modified, for the specific case of the reaction between NiO and Al2O3, by growing NiAl2O4 (spinel) from electron-transparent Al2O3 TEM foils which had been exposed to NiO vapor at 1415°C. This latter ‘thin-film’ approach has been used to characterize the initial stage of spinel formation and to produce clean phase boundaries since further TEM preparation is not required after the reaction is completed. The present study demonstrates that chemical-vapor deposition (CVD) can be used to deposit NiO particles, with controlled size and spatial distributions, onto Al2O3 TEM specimens. Chemical reactions do not occur during the deposition process, since CVD is a relatively low-temperature technique, and thus the NiO-Al2O3 interface can be characterized. Moreover, a series of annealing treatments can be performed on the same sample which allows both Ni0-NiAl2O4 and NiAl2O4-Al2O3 interfaces to be characterized and which therefore makes this technique amenable to kinetics studies of thin-film reactions.

Characterization of Y-Ba-Cu-O films grown on silicon substrates by sequential evaporation

1988 ◽  
Vol 46 ◽  
pp. 866-867
Author(s):  
E. L. Hall ◽  
A. Mogro-Campero ◽  
L. G. Turner ◽  
N. Lewis
Keyword(s):  
Thin Film ◽  
Thin Film Deposition ◽  
Superconducting Films ◽  
Electron Beam Evaporation ◽  
Film Deposition ◽  
Silicon Substrates ◽  
Superconducting Properties ◽  
Sequential Electron ◽  
Thin Superconducting Films

There is great interest in the growth of thin superconducting films of YBa2Cu3Ox on silicon, since this is a necessary first step in the use of this superconductor in a variety of possible electronic applications including interconnects and hybrid semiconductor/superconductor devices. However, initial experiments in this area showed that drastic interdiffusion of Si into the superconductor occurred during annealing if the Y-Ba-Cu-O was deposited direcdy on Si or SiO2, and this interdiffusion destroyed the superconducting properties. This paper describes the results of the use of a zirconia buffer layer as a diffusion barrier in the growth of thin YBa2Cu3Ox films on Si. A more complete description of the growth and characterization of these films will be published elsewhere.Thin film deposition was carried out by sequential electron beam evaporation in vacuum onto clean or oxidized single crystal Si wafers. The first layer evaporated was 0.4 μm of zirconia.

Microstructural and fractographic characterization of B4C-Al cermets tested under dynamic and static loading

1989 ◽  
Vol 47 ◽  
pp. 562-563
Author(s):  
Gyeung Ho Kim ◽  
Mehmet Sarikaya ◽  
D. L. Milius ◽  
I. A. Aksay
Keyword(s):  
Thin Film ◽  
Mechanical Properties ◽  
Fracture Toughness ◽  
Static Loading ◽  
Carbon Deposition ◽  
Full Density ◽  
Unique Combination ◽  
Strong Component ◽  
Reaction Products

Cermets are designed to optimize the mechanical properties of ceramics (hard and strong component) and metals (ductile and tough component) into one system. However, the processing of such systems is a problem in obtaining fully dense composite without deleterious reaction products. In the lightweight (2.65 g/cc) B4C-Al cermet, many of the processing problems have been circumvented. It is now possible to process fully dense B4C-Al cermet with tailored microstructures and achieve unique combination of mechanical properties (fracture strength of over 600 MPa and fracture toughness of 12 MPa-m1/2). In this paper, microstructure and fractography of B4C-Al cermets, tested under dynamic and static loading conditions, are described.The cermet is prepared by infiltration of Al at 1150°C into partially sintered B4C compact under vacuum to full density. Fracture surface replicas were prepared by using cellulose acetate and thin-film carbon deposition. Samples were observed with a Philips 3000 at 100 kV.

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