The study of converse piezoelectric-effect of ZnO thin film

2019 ◽  
Author(s):  
Suman Guchhait ◽  
Aquil Ahmad ◽  
H. Aireddy ◽  
A. K. Das
Keyword(s):  
Thin Film ◽  
Piezoelectric Effect ◽  
Zno Thin Film ◽  
Converse Piezoelectric Effect

Experimental Investigation on the Use of Photostrictive Optical Actuator for MEMS Devices and Verification With the FEA Modeling Results

2011 ◽  
Author(s):  
Mosfequr Rahman ◽  
Masud Nawaz ◽  
John E. Jackson
Keyword(s):  
Thin Film ◽  
Lead Zirconate Titanate ◽  
Piezoelectric Effect ◽  
Photovoltaic Effect ◽  
Research Work ◽  
High Energy ◽  
Ferroelectric Ceramics ◽  
Control Signals ◽  
Fea Modeling ◽  
Converse Piezoelectric Effect

Photostrictive materials are lanthanum-modified lead zirconate titanate (Pb, La)(Zr, Ti) O3 ceramics doped with WO3, called PLZT, exhibit large photostriction under uniform illumination of high-energy light. Photostrictive materials are ferrodielectric ceramics that have a photostrictive effect. Photostriction arises from a superposition of the photovoltaic effect, i.e. the generation of large voltage from the irradiation of light, and the converse-piezoelectric effect, i.e. expansion or contraction under the voltage applied. When non-centrosymmetric materials, such as ferroelectric single crystals or polarized ferroelectric ceramics, are uniformly illuminated, a high voltage, considerably exceeding the band gap energy, is generated. Along with this photovoltage, mechanical strain is also induced due to the converse piezoelectric effect. Photostrictive materials offer the potential for actuators with many advantages over traditional transducing electromechanical actuators made of shape memory alloys and electroceramics (piezoelectric and electrostrictive). Drawback of traditional actuators is that they require hard-wired connections to transmit the control signals which introduce electrical noise into the control signals; on the other hand PLZT actuators offer non-contact actuation, remote control, and immune from electric/magnetic disturbances. Some experimental research has been conducted on the use of PLZT materials, such as optical motor as an electromechanical device suitable for miniaturization, micro-waking machine, photo driven relay device using PLZT bimorphs and high speed (less than 10 ns), low-voltage, low power consumption optical switch. Authors have developed a computational method and implemented in an in-house finite element code which will be useful for designing systems incorporating thin film photostrictive actuators. The purpose of this current research work is to design and develop an experimental test set-up for photostriction effect measurement of PLZT thin film of different thickness, size and location on silicon wafer as smart beams, which may be useful for various MEMS device as optical actuator. The experimental results will be verified by comparing with the FEA modeling results.

Piezoelectric Characterization of Bulk and Thin Film Ferroelectric Materials using Fiber Optics

1996 ◽  
Vol 433 ◽  
Author(s):  
J.T. Dawley ◽  
G. Teowee ◽  
B.J.J. Zelinski ◽  
D.R. Uhlmann
Keyword(s):  
Thin Film ◽  
Fiber Optics ◽  
Piezoelectric Properties ◽  
Piezoelectric Effect ◽  
Ferroelectric Materials ◽  
Data Sets ◽  
Ceramic Thin Films ◽  
Optical Lever ◽  
Converse Piezoelectric Effect

AbstractIn this study, the use of a fiber optic technique for the measurement of the piezoelectric properties of ferroelectric bulk and thin film samples was investigated. The strain and piezoelectric properties (namely the d33 coefficients) were measured using the MTI-2000 Fotonic Sensor, which uses the principle of the optical lever to resolve very small changes in sample displacement (1 Å). Using this technique, we were able to detect the very small strains associated with the converse piezoelectric effect for PVDF films and bulk PZT samples, and correlate the results with data acquired from direct piezoelectric effect measurement. Comparison of the data sets prove that the optical lever would be a useful optical technique for measuring of the d33 values of ceramic thin films, such as BaTiO3, ZnO, and PZT.

Two-dimensional BN-doped ZnO thin-film deposition by a thermionic vacuum arc system

2020 ◽  
Vol 31 (9) ◽  
pp. 6948-6955
Author(s):  
Mustafa Özgür ◽  
Suat Pat ◽  
Reza Mohammadigharehbagh ◽  
Uğur Demirkol ◽  
Nihan Akkurt ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Film Deposition ◽  
Film Deposition ◽  
Vacuum Arc ◽  
Zno Thin Film ◽  
Two Dimensional ◽  
Doped Zno ◽  
Thermionic Vacuum Arc

A sandwich-structured surface plasmon ultraviolet photodetector based on ZnO thin film

2021 ◽  
Vol 32 (3) ◽  
pp. 2696-2703
Author(s):  
Zexuan Guo ◽  
Man Zhao ◽  
Dayong Jiang ◽  
Jing Zhang ◽  
Chunyan Xu
Keyword(s):  
Thin Film ◽  
Surface Plasmon ◽  
Zno Thin Film ◽  
Ultraviolet Photodetector ◽  
Structured Surface

scholarly journals Effects of Thermal Annealing on the Characteristics of High Frequency FBAR Devices

Coatings ◽  
2021 ◽  
Vol 11 (4) ◽  
pp. 397
Author(s):  
Yu-Chen Chang ◽  
Ying-Chung Chen ◽  
Bing-Rui Li ◽  
Wei-Che Shih ◽  
Jyun-Min Lin ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Thermal Annealing ◽  
Electromechanical Coupling ◽  
Zno Thin Films ◽  
Electromechanical Coupling Coefficient ◽  
Back Side ◽  
Zno Thin Film ◽  
Frequency Responses ◽  
Sputtering System

In this study, piezoelectric zinc oxide (ZnO) thin film was deposited on the Pt/Ti/SiNx/Si substrate to construct the FBAR device. The Pt/Ti multilayers were deposited on SiNx/Si as the bottom electrode and the Al thin film was deposited on the ZnO piezoelectric layer as the top electrode by a DC sputtering system. The ZnO thin film was deposited onto the Pt thin film by a radio frequency (RF) magnetron sputtering system. The cavity on back side for acoustic reflection of the FBAR device was achieved by KOH solution and reactive ion etching (RIE) processes. The crystalline structures and surface morphologies of the films were analyzed by X-ray diffraction (XRD) and field emission scanning electron microscope (FE-SEM). The optimized as-deposited ZnO thin films with preferred (002)-orientation were obtained under the sputtering power of 80 W and sputtering pressure of 20 mTorr. The crystalline characteristics of ZnO thin films and the frequency responses of the FBAR devices can be improved by using the rapid thermal annealing (RTA) process. The optimized annealing temperature and annealing time are 400 °C and 10 min, respectively. Finally, the FBAR devices with structure of Al/ZnO/Pt/Ti/SiNx/Si were fabricated. The frequency responses showed that the return loss of the FBAR device with RTA annealing was improved from −24.07 to −34.66 dB, and the electromechanical coupling coefficient (kt2) was improved from 1.73% to 3.02% with the resonance frequency of around 3.4 GHz.

Sign in / Sign up

Export Citation Format

Share Document