Rf Magnetron Sputter-Deposition of La0.5Sr0.5CoO3//Pt Composite Electrodes for Pb(Zr, Ti)O3 Thin Film Capacitors

1996 ◽  
Vol 433 ◽  
Author(s):  
M. V. Raymond ◽  
H. N. Al-Shareef ◽  
B. A. Tuttle ◽  
D. DiMos ◽  
J. T. Evans
Keyword(s):  
Thin Film ◽  
Annealing Temperature ◽  
Composite Electrodes ◽  
Electrode Structure ◽  
Film Properties ◽  
Thin Film Capacitors ◽  
Pzt Thin Film ◽  
Magnetron Sputter Deposition ◽  
Magnetron Sputter ◽  
Gas Ratio

AbstractLa0.5Sr0.5CoO3 (LSCO) thin films have been deposited using RF magnetron sputterdeposition for use as an electrode material for Pb(Zr, Ti)O3 (PZT) thin film capacitors. The effect of the O2:Ar sputter gas ratio during deposition, on the LSCO film properties was investigated. It was found that the resistivity of the LSCO films deposited at ambient temperature decreases as the O2:Ar ratio was increased for both the as-deposited and annealed films. In addition, it was found that thin overlayers of LSCO tend to stabilize the underlying Pt//Ti electrode structure during subsequent thermal processing. The LSCO//Pt//Ti composite electrode stack has a low resistivity and provides excellent fatigue performance for PZT capacitors. Furthermore, the LSCO//Pt//Ti electrode sheet resistance does not degrade with annealing temperature and the electrode does not display hillock formation. Possible mechanisms for the stabilization of the Pt//Ti electrode with LSCO overlayers will be discussed.

Correlations Among Degradations in Lead Zirconate Titanate thin Film Capacitors

1993 ◽  
Vol 310 ◽  
Author(s):  
In K. Yoo ◽  
Seshu B. Desu ◽  
Jimmy Xing
Keyword(s):  
Thin Film ◽  
Leakage Current ◽  
Lead Zirconate Titanate ◽  
Oxygen Vacancies ◽  
Lead Zirconate ◽  
Electrical Degradation ◽  
Zirconate Titanate ◽  
Thin Film Capacitors ◽  
Pzt Thin Film ◽  
Degradation Properties

AbstractMany attempts have been made to reduce degradation properties of Lead Zirconate Titanate (PZT) thin film capacitors. Although each degradation property has been studied extensively for the sake of material improvement, it is desired that they be understood in a unified manner in order to reduce degradation properties simultaneously. This can be achieved if a common source(s) of degradations is identified and controlled. In the past it was noticed that oxygen vacancies play a key role in fatigue, leakage current, and electrical degradation/breakdown of PZT films. It is now known that space charges (oxygen vacancies, mainly) affect ageing, too. Therefore, a quantitative ageing mechanism is proposed based on oxygen vacancy migration under internal field generated by either remanent polarization or spontaneous polarization. Fatigue, leakage current, electrical degradation, and polarization reversal mechanisms are correlated with the ageing mechanism in order to establish guidelines for simultaneous degradation control of PZT thin film capacitors. In addition, the current pitfalls in the ferroelectric test circuit is discussed, which may cause false retention, imprint, and ageing.

Characterisation of the fatigued state of ferroelectric PZT thin-film capacitors

1995 ◽  
Vol 29 (1-4) ◽  
pp. 145-148 ◽  
Author(s):  
E.L. Colla ◽  
A.L. Kholkin ◽  
D. Taylor ◽  
A.K. Tagantsev ◽  
K.G. Brooks ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Film Capacitors ◽  
Pzt Thin Film

scholarly journals Synchrotron X-ray Microdiffraction Images of Polarization Switching in Epitaxial PZT Capacitors with Pt and SrRuO3 Top Electrodes

2003 ◽  
Vol 784 ◽  
Author(s):  
Dal-Hyun Do ◽  
Dong Min Kim ◽  
Chang-Beom Eom ◽  
Eric M. Dufresne ◽  
Eric D. Isaacs ◽  
...  
Keyword(s):  
Thin Film ◽  
Bottom Electrode ◽  
Sputter Deposition ◽  
Ferroelectric Polarization ◽  
X Rays ◽  
X Ray ◽  
Pzt Film ◽  
Thin Film Capacitors ◽  
Pzt Thin Film ◽  
Switchable Polarization

ABSTRACTThe evolution of stored ferroelectric polarization in PZT thin film capacitors was imaged using synchrotron x-ray microdiffraction with a submicron-diameter focused incident x-ray beam. To form the capacitors, an epitaxial Pb(Zr,Ti)O3 (PZT) thin film was deposited on an epitaxially-grown conductive SrRuO3 (SRO) bottom electrode on a SrTiO3 (STO) (001) substrate. Polycrystalline SRO or Pt top electrodes were prepared by sputter deposition through a shadow mask and subsequent annealing. The intensity of x-ray reflections from the PZT film depended on the local ferroelectric polarization. With 10 keV x-rays, regions of opposite polarization differed in intensity by 26% in our PZT capacitor with an SRO top electrode. Devices with SRO electrodes showed just a 25% decrease in the remnant polarization after 107 switching cycles. In devices with Pt top electrodes, however, the switchable polarization decreased a by 70% after only 5×104 cycles.

Breakdown mechanisms in PZT thin film capacitors

1995 ◽  
Vol 11 (1-4) ◽  
pp. 269-275 ◽  
Author(s):  
In Kyeong Yoo ◽  
Chang Jung Kim ◽  
Seshu B. Desu
Keyword(s):  
Thin Film ◽  
Thin Film Capacitors ◽  
Pzt Thin Film

PZT Thin Films Deposited by RF Magnetron Sputtering

2013 ◽  
Vol 302 ◽  
pp. 8-13
Author(s):  
Shun Fa Hwang ◽  
Wen Bin Li
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Annealing Temperature ◽  
Bottom Electrode ◽  
Rf Sputtering ◽  
Rf Magnetron Sputtering ◽  
Pzt Thin Films ◽  
Pzt Film ◽  
Pzt Thin Film

PZT thin film was fabricated by using RF-sputtering process, and platinum was used as bottom electrodes. The sputtering gases were Ar：O2＝25：0 sccm, Ar：O2＝20：5 sccm, or Ar：O2＝15：10 sccm. After sputtering, the PZT film was annealed for 5 minutes under O2 gas environment and at the temperature of 600 0C, 650 0C, 700 0C or 750 0C. To judge the quality of the deposited PZT film, its physical properties and electric properties were evaluated. The results indicate that the best crystallization temperature of PZT thin film is about 700 0C. Also, the roughness of the PZT thin film becomes larger with the increasing of annealing temperature. By adding more oxygen in the sputtering gas, one could have better crystallization of the PZT film. As for the electrical properties, the leakage current of PZT thin film increases with the increasing of annealing temperature. Furthermore, the ferroelectric property is affected by the crystallization amount of perovskite, the thickness of PZT thin film, and the diffusion situation between the bottom electrode and the PZT film.

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