scholarly journals Dependence of Annealing Temperature on Properties of PZT Thin Film Deposited onto SGGG Substrate

2014 ◽  
Vol 15 (5) ◽  
pp. 253-256 ◽  
Author(s):  
In-Ho Im ◽  
Kwang-Hyun Chung ◽  
Duk-Hyun Kim
Keyword(s):  
Thin Film ◽  
Annealing Temperature ◽  
Pzt Thin Film

PZT Thin Films Deposited by RF Magnetron Sputtering

2013 ◽  
Vol 302 ◽  
pp. 8-13
Author(s):  
Shun Fa Hwang ◽  
Wen Bin Li
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Annealing Temperature ◽  
Bottom Electrode ◽  
Rf Sputtering ◽  
Rf Magnetron Sputtering ◽  
Pzt Thin Films ◽  
Pzt Film ◽  
Pzt Thin Film

PZT thin film was fabricated by using RF-sputtering process, and platinum was used as bottom electrodes. The sputtering gases were Ar：O2＝25：0 sccm, Ar：O2＝20：5 sccm, or Ar：O2＝15：10 sccm. After sputtering, the PZT film was annealed for 5 minutes under O2 gas environment and at the temperature of 600 0C, 650 0C, 700 0C or 750 0C. To judge the quality of the deposited PZT film, its physical properties and electric properties were evaluated. The results indicate that the best crystallization temperature of PZT thin film is about 700 0C. Also, the roughness of the PZT thin film becomes larger with the increasing of annealing temperature. By adding more oxygen in the sputtering gas, one could have better crystallization of the PZT film. As for the electrical properties, the leakage current of PZT thin film increases with the increasing of annealing temperature. Furthermore, the ferroelectric property is affected by the crystallization amount of perovskite, the thickness of PZT thin film, and the diffusion situation between the bottom electrode and the PZT film.

Rf Magnetron Sputter-Deposition of La0.5Sr0.5CoO3//Pt Composite Electrodes for Pb(Zr, Ti)O3 Thin Film Capacitors

1996 ◽  
Vol 433 ◽  
Author(s):  
M. V. Raymond ◽  
H. N. Al-Shareef ◽  
B. A. Tuttle ◽  
D. DiMos ◽  
J. T. Evans
Keyword(s):  
Thin Film ◽  
Annealing Temperature ◽  
Composite Electrodes ◽  
Electrode Structure ◽  
Film Properties ◽  
Thin Film Capacitors ◽  
Pzt Thin Film ◽  
Magnetron Sputter Deposition ◽  
Magnetron Sputter ◽  
Gas Ratio

AbstractLa0.5Sr0.5CoO3 (LSCO) thin films have been deposited using RF magnetron sputterdeposition for use as an electrode material for Pb(Zr, Ti)O3 (PZT) thin film capacitors. The effect of the O2:Ar sputter gas ratio during deposition, on the LSCO film properties was investigated. It was found that the resistivity of the LSCO films deposited at ambient temperature decreases as the O2:Ar ratio was increased for both the as-deposited and annealed films. In addition, it was found that thin overlayers of LSCO tend to stabilize the underlying Pt//Ti electrode structure during subsequent thermal processing. The LSCO//Pt//Ti composite electrode stack has a low resistivity and provides excellent fatigue performance for PZT capacitors. Furthermore, the LSCO//Pt//Ti electrode sheet resistance does not degrade with annealing temperature and the electrode does not display hillock formation. Possible mechanisms for the stabilization of the Pt//Ti electrode with LSCO overlayers will be discussed.

scholarly journals Study of Effect of PZT Thin Film Prepared in Different Post-Annealing Temperature Using SIMS

2011 ◽  
Vol 24 (5) ◽  
pp. 392-397
Author(s):  
Shenteng Shenteng ◽  
Tae-Yong Lee ◽  
Kyung-Chun Lee ◽  
Won-Young Hur ◽  
Hyun-Chang Shin ◽  
...  
Keyword(s):  
Thin Film ◽  
Annealing Temperature ◽  
Post Annealing ◽  
Pzt Thin Film ◽  
Post Annealing Temperature

Annealing Treatment of Ferroelectric Pb (Zr0.52Ti0.48)O3 Thin Films with La0.5Sr0.5CoO3 Buffer Layer

2013 ◽  
Vol 739 ◽  
pp. 42-46 ◽  
Author(s):  
Jie Guo ◽  
Wei Liu ◽  
Shi Qing Man
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Buffer Layer ◽  
Annealing Temperature ◽  
Perovskite Phase ◽  
Annealing Treatment ◽  
Rf Magnetron Sputtering ◽  
X Rays ◽  
Pzt Thin Film ◽  
Degree Of Crystallization

Lead zirconium titanate Pb (Zr0.52Ti0.48)O3(PZT) thin films have been deposited on Pt/Ti/Si substrate by rf-magnetron sputtering. X rays diffraction revealed that at 600°C the PZT thin film had crystallized into ABO3perovskite phase. Degree of crystallization depended on annealing temperature. The perovskite grains were textured predominantly along the (110) direction. The grain size was about 140 nm and almost unchanged under different annealing temperature. With the annealing temperature increasing, the degree of crystallization was improved. La0.5Sr0.5CoO3(LSCO) thin film was grown on Pt/Ti/Si as buffer layer. PZT with LSCO buffer layer was intensively (110) preferred orientation and the morphology of PZT thin film changed greatly.

scholarly journals Properties of RF-Sputtered PZT Thin Films with Ti/Pt Electrodes

2014 ◽  
Vol 2014 ◽  
pp. 1-5 ◽  
Author(s):  
Cui Yan ◽  
Yao Minglei ◽  
Zhang Qunying ◽  
Chen Xiaolong ◽  
Chu Jinkui ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Residual Stress ◽  
Annealing Temperature ◽  
X Ray Diffraction ◽  
Pzt Thin Films ◽  
X Ray ◽  
Grain Sizes ◽  
Pzt Thin Film ◽  
Average Residual

Effect of annealing temperature and thin film thickness on properties of Pb(Zr0.53Ti0.47)O3(PZT) thin film deposited via radiofrequency magnetron sputtering technique onto Pt/Ti/SiO2/Si substrate was investigated. Average grain sizes of the PZT thin film were measured by atomic force microscope; their preferred orientation was studied through X-ray diffraction analysis. Average residual stress in the thin film was estimated according to the optimized Stoney formula, and impedance spectroscopy characterization was performed via an intelligent LCR measuring instrument. Average grain sizes of PZT thin films were 60 nm~90 nm and their average roughness was less than 2 nm. According to X-ray diffraction analysis, 600°C is the optimal annealing temperature to obtain the PZT thin film with better crystallization. Average residual stress showed that thermal mismatch was the decisive factor of residual stress in Pt/Ti/SiO2/Si substrate; the residual stress in PZT thin film decreased as their thickness increased and increased with annealing temperature. The dielectric constant and loss angle tangent were extremely increased with the thickness of PZT thin films. The capacitance of the device can be adjusted according to the thickness of PZT thin films.

Spalling Technology of PZT Thin Film Capacitor using Internal Stress

2014 ◽  
Vol 134 (4) ◽  
pp. 85-89
Author(s):  
Kazutaka Sueshige ◽  
Fumiaki Honda ◽  
Tadatomo Suga ◽  
Masaaki Ichiki ◽  
Toshihiro Itoh
Keyword(s):  
Thin Film ◽  
Internal Stress ◽  
Film Capacitor ◽  
Thin Film Capacitor ◽  
Pzt Thin Film

Piezoelectric PZT thin-film transformers with a ring–dot structure

2020 ◽  
Vol 59 (SP) ◽  
pp. SPPD09
Author(s):  
Sang-Hyo Kweon ◽  
Kazuki Tani ◽  
Kensuke Kanda ◽  
Sahn Nahm ◽  
Isaku Kanno
Keyword(s):  
Thin Film ◽  
Pzt Thin Film

scholarly journals Optimizing the Properties of La0.8Sr0.2CrO3 Thin Films through Post-Annealing for High-Temperature Sensing

Nanomaterials ◽  
2021 ◽  
Vol 11 (7) ◽  
pp. 1802
Author(s):  
Dan Liu ◽  
Peng Shi ◽  
Yantao Liu ◽  
Yijun Zhang ◽  
Bian Tian ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Annealing Temperature ◽  
Rf Sputtering ◽  
Maximum Size ◽  
Cross Sectional ◽  
Post Annealing ◽  
Maximum Conductivity ◽  
Different Temperatures ◽  
Post Annealing Temperature

La0.8Sr0.2CrO3 (0.2LSCO) thin films were prepared via the RF sputtering method to fabricate thin-film thermocouples (TFTCs), and post-annealing processes were employed to optimize their properties to sense high temperatures. The XRD patterns of the 0.2LSCO thin films showed a pure phase, and their crystallinities increased with the post-annealing temperature from 800 °C to 1000 °C, while some impurity phases of Cr2O3 and SrCr2O7 were observed above 1000 °C. The surface images indicated that the grain size increased first and then decreased, and the maximum size was 0.71 μm at 1100 °C. The cross-sectional images showed that the thickness of the 0.2LSCO thin films decreased significantly above 1000 °C, which was mainly due to the evaporation of Sr2+ and Cr3+. At the same time, the maximum conductivity was achieved for the film annealed at 1000 °C, which was 6.25 × 10−2 S/cm. When the thin films post-annealed at different temperatures were coupled with Pt reference electrodes to form TFTCs, the trend of output voltage to first increase and then decrease was observed, and the maximum average Seebeck coefficient of 167.8 µV/°C was obtained for the 0.2LSCO thin film post-annealed at 1100 °C. Through post-annealing optimization, the best post-annealing temperature was 1000 °C, which made the 0.2LSCO thin film more stable to monitor the temperatures of turbine engines for a long period of time.

Measurement of d15 Shear-Mode Piezoelectric Response in PZT Thin Film

2009 ◽  
Vol 421-422 ◽  
pp. 95-98
Author(s):  
Tsuyoshi Aoki ◽  
Shigeyoshi Umemiya ◽  
Masaharu Hida ◽  
Kazuaki Kurihara
Keyword(s):  
Thin Film ◽  
Fem Analysis ◽  
Active Part ◽  
Piezoelectric Response ◽  
Small Displacement ◽  
Shear Mode ◽  
Mems Devices ◽  
Pzt Film ◽  
Pzt Thin Film ◽  
Piezoelectric Constants

Piezoelectric films using d15 shear-mode can be applied to many useful MEMS devices. The small displacement derived from the d15 shear-mode was directly observed by a SPM measurement. An isolated PZT(52/48) active part having a pair of driving Cu electrodes was processed in a 5 m-thick sputtering film. The displacement measurement of the active part and its FEM analysis suggested that the estimated d15 piezoelectric constant of the film was 590 pm/V. And, the d31 value of the film was -120 pm/V measured by a conventional cantilever method. The obtained piezoelectric constants of the PZT film are near those of bulk.

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