scholarly journals Interaction between depolarization effects, interface layer, and fatigue behavior in PZT thin film capacitors

2017 ◽  
Vol 122 (2) ◽  
pp. 024105 ◽  
Author(s):  
U. Böttger ◽  
R. Waser
Keyword(s):  
Thin Film ◽  
Fatigue Behavior ◽  
Interface Layer ◽  
Thin Film Capacitors ◽  
Pzt Thin Film

Correlations Among Degradations in Lead Zirconate Titanate thin Film Capacitors

1993 ◽  
Vol 310 ◽  
Author(s):  
In K. Yoo ◽  
Seshu B. Desu ◽  
Jimmy Xing
Keyword(s):  
Thin Film ◽  
Leakage Current ◽  
Lead Zirconate Titanate ◽  
Oxygen Vacancies ◽  
Lead Zirconate ◽  
Electrical Degradation ◽  
Zirconate Titanate ◽  
Thin Film Capacitors ◽  
Pzt Thin Film ◽  
Degradation Properties

AbstractMany attempts have been made to reduce degradation properties of Lead Zirconate Titanate (PZT) thin film capacitors. Although each degradation property has been studied extensively for the sake of material improvement, it is desired that they be understood in a unified manner in order to reduce degradation properties simultaneously. This can be achieved if a common source(s) of degradations is identified and controlled. In the past it was noticed that oxygen vacancies play a key role in fatigue, leakage current, and electrical degradation/breakdown of PZT films. It is now known that space charges (oxygen vacancies, mainly) affect ageing, too. Therefore, a quantitative ageing mechanism is proposed based on oxygen vacancy migration under internal field generated by either remanent polarization or spontaneous polarization. Fatigue, leakage current, electrical degradation, and polarization reversal mechanisms are correlated with the ageing mechanism in order to establish guidelines for simultaneous degradation control of PZT thin film capacitors. In addition, the current pitfalls in the ferroelectric test circuit is discussed, which may cause false retention, imprint, and ageing.

Characterisation of the fatigued state of ferroelectric PZT thin-film capacitors

1995 ◽  
Vol 29 (1-4) ◽  
pp. 145-148 ◽  
Author(s):  
E.L. Colla ◽  
A.L. Kholkin ◽  
D. Taylor ◽  
A.K. Tagantsev ◽  
K.G. Brooks ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Film Capacitors ◽  
Pzt Thin Film

scholarly journals Synchrotron X-ray Microdiffraction Images of Polarization Switching in Epitaxial PZT Capacitors with Pt and SrRuO3 Top Electrodes

2003 ◽  
Vol 784 ◽  
Author(s):  
Dal-Hyun Do ◽  
Dong Min Kim ◽  
Chang-Beom Eom ◽  
Eric M. Dufresne ◽  
Eric D. Isaacs ◽  
...  
Keyword(s):  
Thin Film ◽  
Bottom Electrode ◽  
Sputter Deposition ◽  
Ferroelectric Polarization ◽  
X Rays ◽  
X Ray ◽  
Pzt Film ◽  
Thin Film Capacitors ◽  
Pzt Thin Film ◽  
Switchable Polarization

ABSTRACTThe evolution of stored ferroelectric polarization in PZT thin film capacitors was imaged using synchrotron x-ray microdiffraction with a submicron-diameter focused incident x-ray beam. To form the capacitors, an epitaxial Pb(Zr,Ti)O3 (PZT) thin film was deposited on an epitaxially-grown conductive SrRuO3 (SRO) bottom electrode on a SrTiO3 (STO) (001) substrate. Polycrystalline SRO or Pt top electrodes were prepared by sputter deposition through a shadow mask and subsequent annealing. The intensity of x-ray reflections from the PZT film depended on the local ferroelectric polarization. With 10 keV x-rays, regions of opposite polarization differed in intensity by 26% in our PZT capacitor with an SRO top electrode. Devices with SRO electrodes showed just a 25% decrease in the remnant polarization after 107 switching cycles. In devices with Pt top electrodes, however, the switchable polarization decreased a by 70% after only 5×104 cycles.

Breakdown mechanisms in PZT thin film capacitors

1995 ◽  
Vol 11 (1-4) ◽  
pp. 269-275 ◽  
Author(s):  
In Kyeong Yoo ◽  
Chang Jung Kim ◽  
Seshu B. Desu
Keyword(s):  
Thin Film ◽  
Thin Film Capacitors ◽  
Pzt Thin Film

Nuclear Reaction Probe of Oxygen Vacancy Migration in Electrically Fatigued PZT Thin Film Capacitors

1994 ◽  
Vol 361 ◽  
Author(s):  
R.L. Pfeffer ◽  
W.D. Wilber
Keyword(s):  
Thin Film ◽  
Lead Zirconate Titanate ◽  
Ferroelectric Thin Film ◽  
Lead Zirconate ◽  
Thin Film Capacitors ◽  
Pzt Thin Film ◽  
Pt Electrodes ◽  
Yttrium Barium Cuprate ◽  
Yttrium Barium ◽  
Accuracy Of Measurement

ABSTRACTThe migration of oxygen vacancies and their entrapment near film-electrode interfaces has been proposed as a cause of fatigue (i.e., polarization weakening) in ferroelectric thin film capacitors. To test this idea, lead zirconate titanate (PZT) thin films were epitaxially deposited by laser ablation on LaAlO3 substrates with yttrium barium cuprate (YBCO) base electrodes. Thin film capacitors were formed by deposition of noble metal (Pt) cap electrodes; half of them were then electrically fatigued by repeated polarization reversals (108 cycles). The distributions of oxygen in the two halves were then compared by means of accelerator-based nuclear backscattering (using the narrow elastic resonance at 3.045 MeV in the scattering of 4He from 16O) throughout the bulk of the PZT films and especially right under the Pt electrodes. We were unable to detect any difference in the oxygen profiles to within the accuracy of measurement, which was about 1 % of the oxygen concentration. Compositional changes, at least involving oxygen, do not seem to be responsible for the striking electrical alterations seen in fatigued PZT.

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