Nanoporous Polyimide Films from Polyimide-Aliphatic Polyester or Polyimide-Aliphatic Polycarbonate Copolymers

1996 ◽  
Vol 431 ◽  
Author(s):  
K. R. Carter ◽  
J. L. Hedrick ◽  
R. Richter ◽  
P. T. Furuta ◽  
D. Mecerreyes ◽  
...  
Keyword(s):  
Ring Opening ◽  
Dielectric Constants ◽  
Foam Formation ◽  
Aliphatic Polyester ◽  
Trimethylene Carbonate ◽  
Polyimide Films ◽  
Low Dielectric ◽  
Microelectronic Devices ◽  
Aliphatic Polycarbonate ◽  
Film Dielectric

AbstractWe have explored polyimide foams created using a block copolymer approach as part of our research efforts to obtain thin film dielectric layers with very low dielectric constants for use in microelectronic devices. In these systems the pore sizes are in the nanometer range thus the term “nanofoam”, The polyimide foams are prepared from phase separated block copolymers consisting of thermally stabile and thermally labile blocks, the latter being the dispersed phase. Foam formation is effected by thermolysis of the labile block leaving pores the size and shape corresponding to the initial copolymer morphology. Polyimide nanofoams generated from thermolysis of polyimidealiphatic polyester and polyimide-aliphatic polycarbonate copolymers were investigated. The aliphatic co-blocks were synthesized by ring opening polymerization of the cyclic monomers, such as E-caprolactone, valerolactone, trimethylene carbonate, and L-lactide. The aliphatic blocks were designed in such a way as to allow for incorporation into polyimide copolymers. The foams were characterized by a variety of techniques including, TEM, SAXS, WAXD, DMTA, density and refractive index measurements.

Polyimide Nanofoams For Low Dielectric Applications

1995 ◽  
Vol 381 ◽  
Author(s):  
K. R. Carter ◽  
H. J. Cha ◽  
R. A. Dipietro ◽  
C. J. Hawker ◽  
J. L. Hedrick ◽  
...  
Keyword(s):  
Thin Film ◽  
High Thermal Stability ◽  
Dielectric Constants ◽  
Dispersed Phase ◽  
Foam Formation ◽  
Density Measurements ◽  
Low Dielectric ◽  
Microelectronic Devices ◽  
Dielectric Layers ◽  
Film Dielectric

AbstractFoamed polyimides have been developed in order to obtain thin film dielectric layers with very low dielectric constants for use in microelectronic devices. In these systems the pore sizes are in the nanometer range, thus, the term “nanofoam”. The polyimide foams are prepared from block copolymers consisting of thermally stable and thermally labile blocks, the latter being the dispersed phase. Foam formation is effected by thermolysis of the thermally labile block leaving pores the size and shape corresponding to the initial copolymer morphology. Nanofoams prepared from a number of polyimides as matrix materials, were investigated as well as a number of thermally labile polymers. The foams were characterized by a variety of experiments including, TEM, SAXS, WAXD, DMTA, density measurements, refractive index measurements and dielectric constant measurements. Thin film foams, with high thermal stability and dielectric constants approaching 2.0, can be prepared using the copolymer/nanofoam approach.

Fabrication and Characterization of Cu-Plated Fine Pitch Patterns on Flexible Polyimide

2013 ◽  
Vol 284-287 ◽  
pp. 118-122 ◽  
Author(s):  
Ying Chih Wu ◽  
Yu Jung Huang ◽  
Ming Kun Chen ◽  
Yi Lung Lin ◽  
Ling Sheng Jang
Keyword(s):  
Film Surface ◽  
Dielectric Constants ◽  
Process Window ◽  
Good Thermal Stability ◽  
Low Dielectric ◽  
Microelectronic Devices ◽  
Fine Pitch ◽  
Cu Film ◽  
High Flexibility

The thin flexible Polyimides (PI) films have desirable properties for use in the electrical and electronics industry because their good thermal stability, high flexibility, low dielectric constants, excellent mechanical strength, low loss tangent, low relative permittivity and electrical insulating properties. In order to determine the process window of the surface metallization of PI, the fine traces with 50 micron pitch (25micron line /space) built on a flexible 50 micron thick PI film using wet fabrication process are reported in this paper. The thick copper (Cu) film was obtained from the Cu plating process using evaporated thin film of Cu as the adhesion layer. The fabricated fanout fine patterns are further investigated using scanning electron microscope (SEM), energy-dispersive spectrometry (EDS) and X-ray spectrometry technologies. The experiment is conducted to study the effect of the process parameters on the Cu film surface properties. The results obtained in this work can be applied to the fabrication of flexible microelectronic devices.

A methodology for the preparation of nanoporous polyimide films with low dielectric constants

2006 ◽  
Vol 510 (1-2) ◽  
pp. 241-246 ◽  
Author(s):  
Lizhong Jiang ◽  
Jiugui Liu ◽  
Dezhen Wu ◽  
Hangquan Li ◽  
Riguang Jin
Keyword(s):  
Dielectric Constants ◽  
Polyimide Films ◽  
Low Dielectric

Thermal And Mechanical Properties Of Polyimide Films

1995 ◽  
Vol 381 ◽  
Author(s):  
S. T. Chen
Keyword(s):  
Mechanical Properties ◽  
Structural Integrity ◽  
Polyimide Film ◽  
Thermal And Mechanical Properties ◽  
Polyimide Films ◽  
Low Dielectric ◽  
Semiconductor Chip ◽  
Thermal Expansion Coefficients ◽  
Microelectronic Devices ◽  
Processing Cost

AbstractIn recent years, polyimide film has become a commonly used insulator for microelectronic devices including advanced semiconductor chip and high density packaging. It has the advantages of low dielectric constant, thermal stability and low processing cost. In general, it is important to understand both the thermal and mechanical properties of a microelectronic material. Thermal and mechanical properties play very important roles in terms of determining the device structural integrity. Mismatch of material properties could cause feasibility and reliability problems. These properties are also essential for mechanical stress and thermal stress modeling studies. Biphenyldianhydride-Phenylenediamine (BPDA-PDA) and Pyromellitic Dianhydride-Oxydianiline (PMDA-ODA) are two commonly used polyimide films in electronic industry. Their thermal expansion coefficients and mechanical properties were studied and reported here.

scholarly journals Structural and dielectric properties of some epiclon-based polyimide films

e-Polymers ◽  
2008 ◽  
Vol 8 (1) ◽  
Author(s):  
Andreea Irina Cosutchi ◽  
Camelia Hulubei ◽  
Iuliana Stoica ◽  
Marius Dobromir ◽  
Silvia Ioan
Keyword(s):  
Chemical Structure ◽  
Electrical Conductance ◽  
Dielectric Constants ◽  
Isothermal Treatment ◽  
Cross Linking ◽  
Polyimide Films ◽  
Aromatic Polyimides ◽  
Low Dielectric ◽  
Dielectric Layers ◽  
High Roughness

AbstractSurface and electrical properties of two flexible and cross-linked epiclon based polyimide films were investigated. Surface tension measurements indicate an increased hydrophobicity due to both isothermal treatment - which induces imidization and cross-linking - and to the chemical structure, characterized by the different number of ether linkages in the polyimide backbone. Morphology of film surfaces, modified by plasma treatment, shows high roughness and, implicitly, improved adhesion, as required in electronics. The studied polyimides exhibit low dielectric constants and dielectric losses, comparatively to conventional aromatic polyimides. The electrical conductance and resistivity characteristics of these polymers recommend them as good insulators for dielectric layers in microelectronic applications.

An Interesting Result of Dielectric Property for Novel Polyimides with Fluorene Groups

2010 ◽  
Vol 663-665 ◽  
pp. 511-514 ◽  
Author(s):  
Yuan Yuan ◽  
Bing Xie ◽  
Yu Wang
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Mechanical Properties ◽  
Dielectric Property ◽  
Dielectric Constants ◽  
The Other ◽  
Polyimide Films ◽  
Low Dielectric ◽  
High Dielectric ◽  
Biphenyltetracarboxylic Dianhydride

A series of polyimide thin films were prepared successfully based on bis[3,5-dimethyl-4- (4-aminophenoxy)phenyl]methane （BDAPM）, 9,9-bis（4-（4-aminophenoxy）phenyl）fluorene (BAOFL) and different dianhydrides. And an interesting result of dielectric property for polyimide thin films was found that the polyimide thin film prepared with 3,3',4,4'-biphenyltetracarboxylic dianhydride (BPDA) exhibited high dielectric constants of 5.7 at 1MHz. Conversely, the other polyimides possessing fluorene groups showed low dielectric constants. The structures and the mechanical properties of polyimide films also proved the reason for results of dielectric properties.

Azobenzene-functionalized polymers by ring-opening metathesis polymerization for high dielectric and energy storage performance

2019 ◽  
Vol 10 (19) ◽  
pp. 2447-2455 ◽  
Author(s):  
Yu Zhu ◽  
Cuihong Ma ◽  
Huijin Han ◽  
Ruyi Sun ◽  
Xiaojuan Liao ◽  
...  
Keyword(s):  
Ring Opening ◽  
High Energy ◽  
Dielectric Constants ◽  
High Energy Density ◽  
Functionalized Polymers ◽  
Storage Performance ◽  
Low Dielectric ◽  
Shell Nanostructures ◽  
High Dielectric ◽  
Azobenzene Groups

Block copolymers with push–pull azobenzene pendants and core–shell nanostructures exhibited high and regulated dielectric constants by photoisomerization of azobenzene groups, low dielectric loss, and high energy density.

Synthesis and Characterization of Polymer Nanofoams

2007 ◽  
Vol 334-335 ◽  
pp. 821-824 ◽  
Author(s):  
Yi He Zhang ◽  
Y. Li ◽  
Hai Tao Huang ◽  
Sha Ming Ke ◽  
Li Hang Zhao ◽  
...  
Keyword(s):  
Thin Film ◽  
Dielectric Constant ◽  
Polyimide Film ◽  
Dielectric Constants ◽  
Low Dielectric ◽  
The Matrix ◽  
Poly Ethylene ◽  
Polyimide Matrix ◽  
A Minor ◽  
Film Dielectric

In order to obtain thin film dielectric layers with very low dielectric constants for use in microelectronic devices, polyimide nanofoamed films has been prepared from the polyimide precursors (PMDA-ODA) and poly(ethylene oxide) (PEO) in N,N-dimethylacetamide. The synthesization process included blending polyimide as the major phase with a minor phase of the thermally labile PEO blocks. The foamed films were characterized by a variety of experiments including TG and SEM, and the experimental results indicated that the labile PEO would undergo oxidative thermolysis to release small moleculars from the matrix so as to leave voids into the polyimide matrix. The dielectric properties of the films were studied over broad frequency ranges. The dependences of dielectric constant on the PEO content in the films and frequency were discussed. The films with a proper amount of PEO displayed relatively low dielectric constant compared to the pure polyimide film. Thin film foams with high thermal stability and low dielectric constants can be prepared using the approach.

POSS-benzocyclobutene (POSS-BCB) resin

2017 ◽  
Vol 30 (9) ◽  
pp. 1123-1129 ◽  
Author(s):  
Tao Su ◽  
Weiwei Men ◽  
Zhiqiang Wang ◽  
Lixin Xuan ◽  
Weiwei Zhao
Keyword(s):  
Thermal Stability ◽  
Ring Opening ◽  
High Thermal Stability ◽  
Dielectric Constants ◽  
Low Dielectric Constant ◽  
Good Thermal Stability ◽  
Low Dielectric ◽  
Ring Opening Reaction ◽  
Microelectronics Industry ◽  
Oligomeric Silsesquioxane

Organic-inorganic hybrid materials with a high thermal stability and a low dielectric constant show great potential in the microelectronics industry. In this work, polyhedral oligomeric silsesquioxane-benzocyclobutenes (POSS-BCBs) were synthesized by a hydrosilylation reaction of octavinyloctasilasesquioxane (OVPOSS) and 4-(1,1-dimethyl-1-hydro)-silyl-benzocyclobutene with H2PtCl6 as a catalyst. The ring-opening reaction of BCB on POSS-BCBs resulted in POSS-BCB resins with a highly cross-linked network structure. This resin exhibited good thermal stability (T5% is 495°C in N2), low dielectric constants (<2.1 at 20 MHz) and low water absorption.

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