Memory Effect in RTCVD Epitaxy of Si and SiGe

1996 ◽  
Vol 429 ◽  
Author(s):  
G. Rittier ◽  
B Tillack ◽  
D. Wolansky
Keyword(s):  
Gas Phase ◽  
Memory Effect ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Reaction Chamber ◽  
Surface Kinetics ◽  
Sige Hbt ◽  
Si Substrates ◽  
Integrated Processing

AbstractIn the paper presented the memory effect of boron (B), phosphorus (P), and germanium (Ge) have been studied during the chemical vapor deposition of homoepitaxial Sifilms and heteroepitaxial SiGe- layers in different RTCVD equipment. The CVDprocesses were controlled by surface kinetics on Si substrates from H2, SiH4, GeH4, PH3, and B2H6 at the pressure of 2 mbar in the temperature range of 500°cC–700°C. T1e aufodoping effect from the wafer has been separated from the loading effect of the reactor. The memory effect has been shown to be small for Ge in Si and for B in Si and SiGe. However, a remarkable high memory effect has been found for P, especially in SiGe-films. There are different methods reducing the memory effect in RTCVD-reactors. In-situ gas phase etching by HCI or NF3 gives the best results in the reactors studied here. Based on the obtained results the opportunities and limitations of integrated processing of different Si and SiGe-films (e.g. complete stacks for Si/SiGe-HBT) in the same reaction chamber have been discussed.

Kinetics of Diamond-Like Film Growth Using Filament-Assisted Chemical Vapor Deposition

1994 ◽  
Vol 363 ◽  
Author(s):  
G. Gorsuch ◽  
Y. Jin ◽  
N. K. Ingle ◽  
T. J. Mountziarisi ◽  
W.-Y. Yu ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Kinetic Model ◽  
Gas Phase ◽  
Vapor Deposition ◽  
Film Growth ◽  
Transport Model ◽  
Surface Reactions ◽  
Chemical Vapor ◽  
Surface Kinetics ◽  
Si Substrates

AbstractA detailed kinetic model of diamond-like film growth from methane diluted in hydrogen using low-pressure, filament-assisted chemical vapor deposition (FACVD) has been developed. The model includes both gas-phase and surface reactions. The surface kinetics include adsorption of CH3· and H·, abstraction reactions by gas-phase radicals, desorption, and two pathways for diamond (sp3) and graphitic carbon (sp2) growth. It is postulated that adsorbed CH2· species are the major film precursors. The proposed kinetic model was incorporated into a transport model describing flow, heat and mass transfer in stagnation flow FACVD reactors. Diamond-like films were deposited on preseeded Si substrates in such a reactor at a pressure of 26 Torr, inlet gas composition ranging from 0.5% to 1.5% methane in hydrogen and substrate temperatures ranging from 600 to 950°C. The best films were obtained at low methane concentrations and substrate temperature of 700°C. The films were characterized using Scanning Electron Microscopy (SEM) and Raman spectroscopy. Observations from our experiments and growth rate data from similar experiments reported in the literature [1] were used to estimate unknown kinetic parameters of surface reactions. The proposed model predicts observed film growth rates, compositions and stable species distributions in the gas phase. It is the first complete model of FACVD that includes gas-phase and surface kinetics coupled with transport phenomena.

FTIR In Situ Studies of the Gas Phase Reactions in Chemical Vapor Deposition of SiC

1995 ◽  
Vol 142 (7) ◽  
pp. 2357-2362 ◽  
Author(s):  
S. Jonas ◽  
W. S. Ptak ◽  
W. Sadowski ◽  
E. Walasek ◽  
C. Paluszkiewicz
Keyword(s):  
Chemical Vapor Deposition ◽  
Gas Phase ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Gas Phase Reactions ◽  
In Situ Studies

Effect of pressure on the gas-phase chemistry when using monomethylsilane and dimethylsilane in hot-wire chemical vapor deposition

2015 ◽  
Vol 93 (1) ◽  
pp. 82-90 ◽  
Author(s):  
Rim Toukabri ◽  
Yujun Shi
Keyword(s):  
Free Radical ◽  
Gas Phase ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Phase Reaction ◽  
Hot Wire ◽  
Gas Phase Reaction ◽  
Gas Phase Chemistry ◽  
Phase Chemistry

The effect of source gas pressure on the gas-phase reaction chemistry of dimethylsilane (DMS) and monomethylsilane (MMS) in the hot-wire chemical vapor deposition process has been studied by examining the secondary gas-phase reaction products in a reactor using a soft laser ionization source coupled with mass spectrometry. For DMS, the increase in sample pressure has resulted in the formation of small hydrocarbons, including ethene, acetylene, propene, and propyne. This leads to a switch from silylene dominant chemistry to a free radical dominant one with the pressure increase at low filament temperatures of 1200 and 1300 °C. At the lower pressure of 0.12 Torr, the formation of 1,1,2,2-tetramethyldisilane by dimethylsilylene insertion reaction into the Si–H bond in DMS is favored over trimethylsilane produced from a free radical recombination reaction for a short reaction time. However, when the pressure is increased by 10 times, the gas-phase chemistry becomes dominated by the formation of trimethylsilane. We have demonstrated that trapping of the corresponding active intermediates by the small hydrocarbons produced in situ is responsible for the observed switch. In the study with MMS, the gas-phase chemistry is dominated by the formation of 1,2-dimethyldisilane and 1,3-disilacyclobutane at both pressures of 0.48 and 1.2 Torr. Unlike DMS, the gas-phase reaction chemistry with MMS does not involve free radicals, which are the precursors to produce small hydrocarbons. The absence of small hydrocarbons formed in situ with MMS explains the preservation in chemistry upon the increase in pressure when MMS is used as a source gas.

Low Temperature Chemical Vapor Deposition of 3C-SiC on Si Substrates

2005 ◽  
Vol 483-485 ◽  
pp. 201-204 ◽  
Author(s):  
Christian Förster ◽  
Volker Cimalla ◽  
Oliver Ambacher ◽  
Jörg Pezoldt
Keyword(s):  
Gas Phase ◽  
Vapor Deposition ◽  
Growth Process ◽  
Chemical Vapor ◽  
High Energy ◽  
X Ray Diffraction ◽  
X Ray ◽  
Force Microscopy ◽  
Si Substrates ◽  
Atomic Force

In the present work an UHVCVD method was developed which allows the epitaxial growth of 3C-SiC on Si substrates at temperatures below 1000°C. The developed method enable the growth of low stress or nearly stress free single crystalline 3C-SiC layers on Si. The influence of hydrogen on the growth process are be discussed. The structural properties of the 3C-SiC(100) layers were studied with reflection high-energy diffraction, atomic force microscopy, X-ray diffraction and the layer thickness were measured by reflectometry as well as visible ellipsometry. The tensile strain reduction at optimized growth temperature, Si/C ratio in the gas phase and deposition rate are demonstrated by the observation of freestanding SiC cantilevers.

MOCVD of GaN Using Diethylgalliumazide and Ammonia

1990 ◽  
Vol 204 ◽  
Author(s):  
Kwok-L. Ho ◽  
Klavs F. Jensen ◽  
Jen-W. Hwang ◽  
John F. Evans ◽  
Wayne L. Gladfelter
Keyword(s):  
Growth Rate ◽  
Gas Phase ◽  
Vapor Deposition ◽  
Smooth Surface ◽  
Metalorganic Chemical Vapor Deposition ◽  
Chemical Vapor ◽  
Laser Interferometry ◽  
Optical And Electrical Properties ◽  
Sapphire Substrates

ABSTRACTGaN thin films have been deposited on Si and sapphire substrates by metalorganic chemical vapor deposition (MOCVD) using diethylgalliumazide and ammonia. Films were grown in the temperature range of 500-750°C. Growth rates were monitored in situ using laser interferometry. The addition of ammonia enhanced the growth rate significantly. At high temperatures, gas-phase depletion of the precursor reduced the growth rate of GaN. Films grown on (0001)-oriented sapphire substrates at temperatures above 650°C were highly textured with smooth surface morphology. Optical and electrical properties of the films are discussed and compared to those of films grown using conventional Ga and N sources.

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