In Situ Mass Spectral and Infrared Studies of the Gas‐Phase Evolution and Decomposition Pathways of Cu II  ( hfac ) 2 : Application in the Development of Plasma‐Assisted Chemical Vapor Deposition of Copper

1995 ◽  
Vol 142 (11) ◽  
pp. 3896-3903 ◽  
Author(s):  
Bo Zheng ◽  
Gregory Braeckelmann ◽  
Kelly Kujawski ◽  
Ishing Lou ◽  
Sarah Lane ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Gas Phase ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Phase Evolution ◽  
Mass Spectral ◽  
Infrared Studies

FTIR In Situ Studies of the Gas Phase Reactions in Chemical Vapor Deposition of SiC

1995 ◽  
Vol 142 (7) ◽  
pp. 2357-2362 ◽  
Author(s):  
S. Jonas ◽  
W. S. Ptak ◽  
W. Sadowski ◽  
E. Walasek ◽  
C. Paluszkiewicz
Keyword(s):  
Chemical Vapor Deposition ◽  
Gas Phase ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Gas Phase Reactions ◽  
In Situ Studies

In situ study of electron beam-induced chemical vapor deposition of Au in an environmental TEM

1995 ◽  
Vol 53 ◽  
pp. 256-257
Author(s):  
J. Drucker ◽  
R. Sharma ◽  
J. Kouvetakis ◽  
K.H.J. Weiss
Keyword(s):  
Electron Beam ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Quantum Effect ◽  
Line Drawing ◽  
Chemical Vapor ◽  
Environmental Cell ◽  
Engineering Changes ◽  
Kinetics Of

Patterning of metals is a key element in the fabrication of integrated microelectronics. For circuit repair and engineering changes constructive lithography, writing techniques, based on electron, ion or photon beam-induced decomposition of precursor molecule and its deposition on top of a structure have gained wide acceptance Recently, scanning probe techniques have been used for line drawing and wire growth of W on a silicon substrate for quantum effect devices. The kinetics of electron beam induced W deposition from WF6 gas has been studied by adsorbing the gas on SiO2 surface and measuring the growth in a TEM for various exposure times. Our environmental cell allows us to control not only electron exposure time but also the gas pressure flow and the temperature. We have studied the growth kinetics of Au Chemical vapor deposition (CVD), in situ, at different temperatures with/without the electron beam on highly clean Si surfaces in an environmental cell fitted inside a TEM column.

In Situ Phosphorus-Doped Poly-Si by Low Pressure Chemical Vapor Deposition for Passivating Contacts

2020 ◽  
Author(s):  
Meric Firat ◽  
Hariharsudan Sivaramakrishnan Radhakrishnan ◽  
Maria Recaman Payo ◽  
Filip Duerinckx ◽  
Rajiv Sharma ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Low Pressure ◽  
Pressure Chemical ◽  
Phosphorus Doped
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