Kinetics of Diamond-Like Film Growth Using Filament-Assisted Chemical Vapor Deposition

1994 ◽  
Vol 363 ◽  
Author(s):  
G. Gorsuch ◽  
Y. Jin ◽  
N. K. Ingle ◽  
T. J. Mountziarisi ◽  
W.-Y. Yu ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Kinetic Model ◽  
Gas Phase ◽  
Vapor Deposition ◽  
Film Growth ◽  
Transport Model ◽  
Surface Reactions ◽  
Chemical Vapor ◽  
Surface Kinetics ◽  
Si Substrates

AbstractA detailed kinetic model of diamond-like film growth from methane diluted in hydrogen using low-pressure, filament-assisted chemical vapor deposition (FACVD) has been developed. The model includes both gas-phase and surface reactions. The surface kinetics include adsorption of CH3· and H·, abstraction reactions by gas-phase radicals, desorption, and two pathways for diamond (sp3) and graphitic carbon (sp2) growth. It is postulated that adsorbed CH2· species are the major film precursors. The proposed kinetic model was incorporated into a transport model describing flow, heat and mass transfer in stagnation flow FACVD reactors. Diamond-like films were deposited on preseeded Si substrates in such a reactor at a pressure of 26 Torr, inlet gas composition ranging from 0.5% to 1.5% methane in hydrogen and substrate temperatures ranging from 600 to 950°C. The best films were obtained at low methane concentrations and substrate temperature of 700°C. The films were characterized using Scanning Electron Microscopy (SEM) and Raman spectroscopy. Observations from our experiments and growth rate data from similar experiments reported in the literature [1] were used to estimate unknown kinetic parameters of surface reactions. The proposed model predicts observed film growth rates, compositions and stable species distributions in the gas phase. It is the first complete model of FACVD that includes gas-phase and surface kinetics coupled with transport phenomena.

A Kinetic Model for Metalorganic Chemical Vapor Deposition of GaAs from Trimethylgallium and Arsine

1988 ◽  
Vol 131 ◽  
Author(s):  
Triantafillos J. Mountziaris ◽  
Klavs F. Jensen
Keyword(s):  
Chemical Vapor Deposition ◽  
Kinetic Model ◽  
Gas Phase ◽  
Vapor Deposition ◽  
Metalorganic Chemical Vapor Deposition ◽  
Transport Model ◽  
Surface Reactions ◽  
Experimental Studies ◽  
Chemical Vapor ◽  
Metalorganic Chemical

ABSTRACTA kinetic model for metalorganic chemical vapor deposition (MOCVD) of GaAs from trimethylgallium and arsine is presented. The proposed mechanism includes 15 gas-phase species, 17 gas-phase reactions, 9 surface species and 29 surface reactions. The surface reactions take into account different crystallographic orientations of the GaAs substrate. Sensitivity analysis and existing experimental observations have been used to develop the reduced mechanism from the large number of reactions that might in principle occur. Rate constants are estimated by using thermochemical methods and reported experimental data. The kinetic mechanism is combined with a two-dimensional transport model of a hot-wall tubular reactor used in experimental studies. Model predictions of gas-phase composition and GaAs growth rates show good agreement with published experimental studies. In addition, the model predicts reported trends in carbon incorporation.

High-Quality InSb Growth on GaAs and Si by Low-Pressure Metalorganic Chemical Vapor Deposition

1992 ◽  
Vol 281 ◽  
Author(s):  
Y. H. Choi ◽  
R. Sudharsanan ◽  
C. Besikci ◽  
E. Bigan ◽  
M. Razeghi
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Metalorganic Chemical Vapor Deposition ◽  
Film Growth ◽  
Chemical Vapor ◽  
Low Pressure ◽  
High Quality ◽  
Si Substrates ◽  
Gaas Substrates ◽  
Metalorganic Chemical

ABSTRACTWe report the first InSb film growth on Si by low-pressure metalorganic chemical vapor deposition. High-quality layers of InSb have been grown on Si and GaAs substrates. InSb films displayed mirror-like morphology on both substrates. X-ray full width at half maximum of 171 arcsec on GaAs and 361 arcsec on Si for a InSb layer thickness of 3.1 μm were measured. Room-temperature Hall mobilities of 67,000 and 48,000 cm2/V.s with carrier concentration of 1.5×1016 and 2.3×1016 cm−3 have been achieved for InSb films grown on GaAs and Si substrates, respectively. A 4.8 μ-thick InSb film on GaAs exhibited mobility of 76,200 cm2/Vs at 240 K.

Characteristics of SiC Heteroepitaxial Growth on Si by Hot-Mesh Chemical Vapor Deposition

2006 ◽  
Vol 11-12 ◽  
pp. 265-268
Author(s):  
T. Kurimoto ◽  
Yuichiro Kuroki ◽  
Kanji Yasui ◽  
Masasuke Takata ◽  
Tadashi Akahane
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Film Growth ◽  
Substrate Surface ◽  
Chemical Vapor ◽  
Heteroepitaxial Growth ◽  
Cross Sectional ◽  
Optical Absorbance ◽  
Si Substrates ◽  
Hydrogen Radicals

The heteroepitaxial growth of 3C-SiC films on Si(100) substrates by the hot-mesh chemical vapor deposition (HM-CVD) method using monomethylsilane as a source gas was investigated. From the results of X-ray diffraction spectra, 3C-SiC crystal was epitaxially grown on Si substrates at substrate temperatures above 750°C. The SiC/Si interface was observed by cross-sectional scanning electron microscopy, and was confirmed to be void-free and smooth. The density of hydrogen radicals supplied to the substrate surface during the growth was also estimated measuring the optical absorbance change of tungsten phosphate glass plates. From the dependence of the growth rate on substrate temperature, the mechanism of SiC film growth by HM-CVD was considered.

Metallorganic Chemical Vapor Deposition of Ir Films With Iridium Acetylacetonate and Carbonyl Precursors

1998 ◽  
Vol 541 ◽  
Author(s):  
Y.-M. Sun ◽  
J. Endle ◽  
K. Smith ◽  
J. G. Ekerdt ◽  
R. L. Hance ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Gas Phase ◽  
Vapor Deposition ◽  
Film Growth ◽  
Chemical Vapor ◽  
Film Deposition ◽  
Film Deposition Rate ◽  
Phase Nucleation ◽  
Temperature Programmed ◽  
Reactive Gas

AbstractIridium acetylacetonate, dicarbonylacetylacetonato iridium, and tetrakisiridium dodecacarbonyl (iridium carbonyl) have been evaluated for metallorganic chemical vapor deposition (CVD) of pure iridium films. Temperature programmed mass spectroscopy reveals that iridium tris-acetylacetonate and dicarbonylacetylactonato iridium have high thermal stability and sublime at 200 and 100 °C in vacuum, respectively. Iridium carbonyl decomposes upon sublimation at temperatures above 120 °C. Pure CVD Ir films were obtained using iridium carbonyl; however, carbon is incorporated into the iridium films with the iridium trisacetylacetonate and dicarbonylacetylactonato iridium precursors unless a reactive gas, such as oxygen is co-dosed. Co-dosed oxygen also increases the film deposition rate and significantly decreases the film growth temperatures. Particles were found on the films grown with iridium carbonyl between 280 to 400 °C, indicating that gas phase nucleation occurred during deposition.

Kinetic model of gas-phase reactions in the chemical vapor deposition of propane

Carbon ◽  
2014 ◽  
Vol 71 ◽  
pp. 345
Author(s):  
Wei Xu ◽  
Zhong-wei Zhang ◽  
Rui-cheng Bai ◽  
Ai-jun Li ◽  
Jun-shan Wang ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Kinetic Model ◽  
Gas Phase ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Gas Phase Reactions
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