Low Temperature Oxidation Processing with High Purity Ozone

1996 ◽  
Vol 429 ◽  
Author(s):  
A. Kurokawa ◽  
S. Ichimura ◽  
H. J. Kang ◽  
D. W. Moon
Keyword(s):  
Low Temperature ◽  
Thermal Oxidation ◽  
High Purity ◽  
Photoelectron Spectroscopy ◽  
Oxide Formation ◽  
Low Temperature Oxidation ◽  
Temperature Oxidation ◽  
X Ray

AbstractTo lower the temperature of oxide-passivation processing the high- purity ozone (more than 98 mole %) was used instead of usual thermal oxidation. Initial oxide formation on a Si(111) surface with high-purity ozone is investigated by X-ray photoelectron spectroscopy (XPS). From the comparison of the suboxides formed with ozone and oxygen exposures, it is clear that ozone forms less suboxide than oxygen. The oxidation with ozone also proceeds on the hydrogen passivated surface which oxygen molecules do not oxidize.

scholarly journals ITO/SiO2/ITO Structure on a Sapphire Substrate Using the Oxidation of Ultra-Thin Si Films as an Insulating Layer for One-Glass-Solution Capacitive Touch-Screen Panels

Coatings ◽  
2020 ◽  
Vol 10 (2) ◽  
pp. 134 ◽  
Author(s):  
Shin Yong Joo ◽  
Chadrasekhar Loka ◽  
Young Woong Jo ◽  
Maddipatla Reddyprakash ◽  
Sung Whan Moon ◽  
...  
Keyword(s):  
Low Temperature ◽  
Sapphire Substrate ◽  
Indium Tin Oxide ◽  
Photoelectron Spectroscopy ◽  
Touch Screen ◽  
Sio2 Film ◽  
Silicon Films ◽  
Low Temperature Oxidation ◽  
Temperature Oxidation ◽  
Si Films

The SiO2 generated by low-temperature oxidation of ultra-thin metallic silicon (thickness = 50 nm) film was evaluated for implementation in one-glass-solution capacitive touch-screen panels (OGS-TSPs) on sapphire-based substrates. Our results show that the silicon films oxidized at 823 K exhibited the highest visible transmittance about 91% at 550 nm, compared to ~72% transmittance of the as-deposited silicon films which were deposited at room temperature. Additionally, the annealed films exhibited a more uniform, dense, and smooth surface microstructure than that of the as-deposited Si films. X-ray photoelectron spectroscopy (XPS) results revealed that the low-temperature oxidation of Si films at 823 K yielded SiO2. Furthermore, when the insulating SiO2 film obtained by low-temperature oxidation was sandwiched between two indium tin oxide (ITO) layers (ITO/SiO2/ITO) on a sapphire substrate, the SiO2 film resulted in the dielectric strength of approximately 3 MV/cm. In addition, the highest optical transmittance obtained by the ITO/SiO2/ITO films is about 88.3%. The change in capacitance of the ITO/SiO2/ITO structure was approximately 3.2 pF, which indicates the possibility of implementation in capacitive touch-screen panel devices.

Oxide Formation on NbAl3, and TiAl Due to Ion Implantation of 18O

1993 ◽  
Vol 316 ◽  
Author(s):  
Robert J. Hanrahan ◽  
Ellis D. Verink ◽  
Stephen P. Withrow ◽  
Eero O. Ristolainen
Keyword(s):  
Ion Implantation ◽  
Photoelectron Spectroscopy ◽  
X Ray Diffraction ◽  
Oxide Formation ◽  
Temperature Oxidation ◽  
Near Surface ◽  
X Ray ◽  
Surface Oxides ◽  
Secondary Ion ◽  
Oxygen Profiles

ABSTRACTSurface modification by ion implantation of 18O ions was investigated as a technique for altering the high-temperature oxidation of aluminide intermetallic compounds and related alloys. Specimens of NbAl3 and TiAl were implanted to a dose of 1×1018 ions/cm2 at 168 keV. Doses and accelerating energies were calculated to obtain near-stoichiometric concentrations of oxygen. Use of 18O allowed the implanted oxygen profiles to be measured using secondary ion mass spectroscopy (SIMS). The near surface oxides formed were studied using x-ray photoelectron spectroscopy (XPS) and Auger electron spectroscopy. Specimens were also examined using x-ray diffraction and SEM. This paper presents results for specimens examined in the as-implanted state. The oxide formed due to implantation is a layer containing a mixture of Nb or Ti and amorphous Al oxides.

Low Temperature Oxidation of Cu-Base Leadframe and Cu/Emc Interface Adhesion

1996 ◽  
Vol 445 ◽  
Author(s):  
Soon-Jin Cho ◽  
Kyung-Wook Paik
Keyword(s):  
Low Temperature ◽  
Photoelectron Spectroscopy ◽  
Early Stage ◽  
Kinetic Studies ◽  
Oxide Thickness ◽  
Low Temperature Oxidation ◽  
Copper Oxidation ◽  
Temperature Oxidation ◽  
Pull Strength ◽  
20 Nm

AbstractLow temperature oxidation of a Cu-base leadframe has been investigated to understand the effect of Cu oxidation on the adhesion between Cu-base leadframes (Cu L/F) and epoxy molding compounds (EMC). From the kinetic studies on the oxidation, oxide growth was found to follow the parabolic rate law in the temperature range of 150 °C to 300 °C and the activation energy for the oxidation was 17.0 kcal/mol. X-ray photoelectron spectroscopy (XPS) studies confirmed that the oxide film consisted of Cu2O, CuO, and NiO. It was shown that the early stage of oxidation improved the adhesion strength. Furthermore the optimum copper oxide thickness required for the maximum pull strength ranged between 20 nm and 30 nm. The high pull strength was presumably due to the increase of surface wettability and mechanical interlocking effects resulting from copper oxidation.

Comparison of High-Purity-Ozone Oxidation on Si(111) and Si(100)

1997 ◽  
Vol 477 ◽  
Author(s):  
A. Kurokawa ◽  
S. Ichimura ◽  
D. W. Moon
Keyword(s):  
Temperature Dependence ◽  
High Purity ◽  
Photoelectron Spectroscopy ◽  
Surface Ozone ◽  
Experimental Chamber ◽  
Oxide Formation ◽  
Ozone Oxidation ◽  
X Ray ◽  
Temperature Range ◽  
Thin Oxide

ABSTRACTThe oxidation of Si(111) and Si(100) surfaces with the high-purity ozone(more than 98 mole %) was investigated with X-ray photoelectron spectroscopy (XPS). Thin oxide less than 3nm thickens was formed in an experimental chamber and the results showed that ozone oxidizes the (111) surface faster than (100) surface. Ozone does not show the temperature dependence on oxidation within the temperature range of 250–500 degree C for both (111) and (100) surfaces. Ozone proceeds the oxide formation at 700 degree C where oxygen does not proceed oxide formation rapidly.

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