Low temperature oxidation behavior of reactively sputtered TiN by x‐ray photoelectron spectroscopy and contact resistance measurements

1986 ◽  
Vol 4 (6) ◽  
pp. 2784-2788 ◽  
Author(s):  
C. Ernsberger ◽  
J. Nickerson ◽  
T. Smith ◽  
A. E. Miller ◽  
D. Banks
Keyword(s):  
Low Temperature ◽  
Contact Resistance ◽  
Photoelectron Spectroscopy ◽  
Oxidation Behavior ◽  
Low Temperature Oxidation ◽  
Temperature Oxidation ◽  
X Ray

Low Temperature Oxidation Processing with High Purity Ozone

1996 ◽  
Vol 429 ◽  
Author(s):  
A. Kurokawa ◽  
S. Ichimura ◽  
H. J. Kang ◽  
D. W. Moon
Keyword(s):  
Low Temperature ◽  
Thermal Oxidation ◽  
High Purity ◽  
Photoelectron Spectroscopy ◽  
Oxide Formation ◽  
Low Temperature Oxidation ◽  
Temperature Oxidation ◽  
X Ray

AbstractTo lower the temperature of oxide-passivation processing the high- purity ozone (more than 98 mole %) was used instead of usual thermal oxidation. Initial oxide formation on a Si(111) surface with high-purity ozone is investigated by X-ray photoelectron spectroscopy (XPS). From the comparison of the suboxides formed with ozone and oxygen exposures, it is clear that ozone forms less suboxide than oxygen. The oxidation with ozone also proceeds on the hydrogen passivated surface which oxygen molecules do not oxidize.

High Temperature Oxidation Behavior of SUS310S Austenitic Stainless Steel

2014 ◽  
Vol 941-944 ◽  
pp. 212-215
Author(s):  
Tao Zheng ◽  
Jing Tao Han
Keyword(s):  
Photoelectron Spectroscopy ◽  
Oxidation Behavior ◽  
Layer Structure ◽  
Energy Dispersive Spectrometer ◽  
Austenitic Stainless Steels ◽  
Temperature Oxidation ◽  
X Ray ◽  
High Temperature Oxidation Behavior ◽  
High Oxidation Resistance ◽  
Ray Diffusion

The oxidation behavior of SUS310S austenitic stainless steels was studied in isothermal conditions at different temperatures between 800oC and 1100oC for 96h in air. The oxidation kinetics was analyzed, the surface and cross-section of the oxide scale grown by oxidation were characterized by using scanning electron microscopy (SEM), energy dispersive spectrometer (EDS), X-ray diffusion (XRD) and X-ray photoelectron spectroscopy (XPS). The SUS310S steel has high oxidation resistance at 800oC and with the increase of the temperature, the parabolic rate constants is constantly increasing. Examination of the morphology and composition of oxide layers reveals a double-layer structure, The inner layer is mainly chromium oxide (Cr2O3) and is covered by an uneven thinness outer layer of manganese-chromium or iron-chromium spinel oxide.

scholarly journals ITO/SiO2/ITO Structure on a Sapphire Substrate Using the Oxidation of Ultra-Thin Si Films as an Insulating Layer for One-Glass-Solution Capacitive Touch-Screen Panels

Coatings ◽  
2020 ◽  
Vol 10 (2) ◽  
pp. 134 ◽  
Author(s):  
Shin Yong Joo ◽  
Chadrasekhar Loka ◽  
Young Woong Jo ◽  
Maddipatla Reddyprakash ◽  
Sung Whan Moon ◽  
...  
Keyword(s):  
Low Temperature ◽  
Sapphire Substrate ◽  
Indium Tin Oxide ◽  
Photoelectron Spectroscopy ◽  
Touch Screen ◽  
Sio2 Film ◽  
Silicon Films ◽  
Low Temperature Oxidation ◽  
Temperature Oxidation ◽  
Si Films

The SiO2 generated by low-temperature oxidation of ultra-thin metallic silicon (thickness = 50 nm) film was evaluated for implementation in one-glass-solution capacitive touch-screen panels (OGS-TSPs) on sapphire-based substrates. Our results show that the silicon films oxidized at 823 K exhibited the highest visible transmittance about 91% at 550 nm, compared to ~72% transmittance of the as-deposited silicon films which were deposited at room temperature. Additionally, the annealed films exhibited a more uniform, dense, and smooth surface microstructure than that of the as-deposited Si films. X-ray photoelectron spectroscopy (XPS) results revealed that the low-temperature oxidation of Si films at 823 K yielded SiO2. Furthermore, when the insulating SiO2 film obtained by low-temperature oxidation was sandwiched between two indium tin oxide (ITO) layers (ITO/SiO2/ITO) on a sapphire substrate, the SiO2 film resulted in the dielectric strength of approximately 3 MV/cm. In addition, the highest optical transmittance obtained by the ITO/SiO2/ITO films is about 88.3%. The change in capacitance of the ITO/SiO2/ITO structure was approximately 3.2 pF, which indicates the possibility of implementation in capacitive touch-screen panel devices.

Effect of NaOH Treatment on the Low-Temperature Oxidation Behavior of Lignite

2019 ◽  
Vol 33 (9) ◽  
pp. 9161-9170 ◽  
Author(s):  
Yongyu Wang ◽  
Sheng Xue ◽  
Yibo Tang ◽  
Fuding Mei ◽  
Wei He ◽  
...  
Keyword(s):  
Low Temperature ◽  
Oxidation Behavior ◽  
Low Temperature Oxidation ◽  
Temperature Oxidation ◽  
Naoh Treatment

Oxidation Behavior of Pd-Si Compounds

1982 ◽  
Vol 18 ◽  
Author(s):  
A. Cros ◽  
R. A. Pollak ◽  
K. N. Tu
Keyword(s):  
Chemical Analysis ◽  
Photoelectron Spectroscopy ◽  
Electron Spectroscopy ◽  
Room Temperature ◽  
Oxidation Behavior ◽  
Spillover Effect ◽  
Photoemission Spectroscopy ◽  
Temperature Oxidation ◽  
X Ray ◽  
Oxygen Dissociation

The room temperature oxidation of PdSi, Pd2Si and Pd4Si has been studied using X-ray photoelectron spectroscopy (X-ray photoemission spectroscopy or electron spectroscopy for chemical analysis). We find that only silicon atoms in these silicides are oxidized and the oxidation of Pd4Si surfaces is enhanced compared with that of Pd2Si and PdSi, as is evidenced by both a higher silicon oxidation state and thicker oxide films. This behavior is discussed in terms of silicide stability and a spillover effect where palladium atoms catalyze molecular oxygen dissociation.

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