Influence of HCL on Rapid Thermal Oxides

1996 ◽  
Vol 429 ◽  
Author(s):  
G. A. Hames ◽  
S. E. Beck ◽  
A. G. Gilicinski ◽  
W. K. Henson ◽  
J. J. Wortman
Keyword(s):  
Thermal Oxidation ◽  
Gate Oxide ◽  
Surface Roughening ◽  
Gate Oxides ◽  
Mos Capacitors ◽  
Force Microscopy ◽  
Rapid Thermal Oxidation ◽  
Atomic Force ◽  
Secondary Ion

AbstractThe influence of HCl on the quality of gate oxides grown by rapid thermal oxidation has been investigated. HCl was added to oxidation ambient for some rapid thermal oxides while for others the silicon surface was annealed in a partial HCl ambient prior to rapid thermal oxidation. Improvements in gate oxide integrity were monitored on MOS capacitors and MOSFET devices by I-V and C-V testing. The levels of chlorine incorporated in the oxide from the addition of HCl to the process was measured by secondary ion mass spectroscopy. Atomic force microscopy was performed to measure surface roughening during HCl pre-oxidation treatments.

Comparative Studies of Gate Oxides Using Thermal, Stacked Gate, and Rapid Thermal Oxidation

1990 ◽  
Vol 182 ◽  
Author(s):  
S. Chittipeddi ◽  
P. K. Roy ◽  
V. C. Kannan ◽  
R. Singh ◽  
C. M. Dziuba
Keyword(s):  
Thermal Oxidation ◽  
Defect Density ◽  
Gate Oxide ◽  
Gate Oxides ◽  
Mos Capacitors ◽  
Rapid Thermal Oxidation ◽  
Transmission Electron ◽  
Lattice Images ◽  
Flatband Voltage

AbstractIn this paper we report on the quality of gate oxides obtained using three different oxidation techniques, namely thermal oxidation, rapid thermal oxidation and stacked gate oxidation. We report on the oxide thicknesses, the flatband voltage, threshold voltage, and QSS/Q values for MOS capacitors fabricated using these three techniques. We also fabricated MOSFET's using thermal oxides and stacked gate oxides, and find that the stacked gate oxides have a lower gate oxide defect density. Lattice images have also been obtained for the Si/SiO2 interface using transmission electron microscopy (TEM). We find that stacked oxide synthesis results in lower stresses and asperities at the interface relative to thermal and rapid thermal oxidation.

4H-SiC DMOSFETs Processed Using Graphite Capped Implant Activation Anneal

2006 ◽  
Vol 527-529 ◽  
pp. 1265-1268 ◽  
Author(s):  
Jeffery B. Fedison ◽  
Chris S. Cowen ◽  
Jerome L. Garrett ◽  
E.T. Downey ◽  
James W. Kretchmer ◽  
...  
Keyword(s):  
Atomic Force Microscopy ◽  
High Temperature ◽  
Room Temperature ◽  
Gate Oxide ◽  
Surface Roughening ◽  
Force Microscopy ◽  
Atomic Force ◽  
N Source ◽  
High Temperature Anneal ◽  
Blocking Voltage

Results of a 1200V 4H-SiC vertical DMOSFET based on ion implanted n+ source and pwell regions are reported. The implanted regions are activated by way of a high temperature anneal (1675°C for 30 min) during which the SiC surface is protected by a layer of graphite. Atomic force microscopy shows the graphite to effectively prevent surface roughening that otherwise occurs when no capping layer is used. MOSFETs are demonstrated using the graphite capped anneal process with a gate oxide grown in N2O and show specific on-resistance of 64 mW×cm2, blocking voltage of up to 1600V and leakage current of 0.5–3 ´10-6 A/cm2 at 1200V. The effective nchannel mobility was found to be 1.5 cm2/V×s at room temperature and increases as temperature increases (2.8 cm2/V×s at 200°C).

scholarly journals Aluminum Nitride Nanofilms by Atomic Layer Deposition Using Alternative Precursors Hydrazinium Chloride and Triisobutylaluminum

Coatings ◽  
2020 ◽  
Vol 10 (10) ◽  
pp. 954
Author(s):  
Rashid Dallaev ◽  
Dinara Sobola ◽  
Pavel Tofel ◽  
Ľubomir Škvarenina ◽  
Petr Sedlák
Keyword(s):  
Atomic Layer Deposition ◽  
Photoelectron Spectroscopy ◽  
Secondary Ion Mass Spectrometry ◽  
Atomic Layer ◽  
Nitrogen Atmosphere ◽  
Force Microscopy ◽  
Atomic Force ◽  
Layer Deposition ◽  
Secondary Ion

The aim of this study is motivated by the pursuit to investigate the performance of new and as yet untested precursors such as hydrazinium chloride (N2H5Cl) and triisobutylaluminum Al(C4H9)3 in the AlN atomic layer deposition (ALD) process as well as to study effects of successive annealing on the quality of the resulting layer. Both precursors are significantly cheaper than their conventional counterparts while also being widely available and can boast easy handling. Furthermore, Al(C4H9)3 being a rather large molecule might promote steric hindrance and prevent formation of undesired hydrogen bonds. Chemical analysis is provided by X-ray photoelectron spectroscopy (XPS) and secondary-ion mass spectrometry (SIMS) techniques; surface morphology was studied using atomic force microscopy (AFM). Chlorine containing precursors such as AlCl3 are usually avoided in ALD process due to the risk of chamber contamination. However, experimental data of this study demonstrated that the use of N2H5Cl does not result in chlorine contamination due to the fact that temperature needed for HCl molecules to become reactive cannot be reached within the AlN ALD window (200–350 °C). No amount of chlorine was detected even by the most sensitive techniques such as SIMS, meaning it is fully removed out of the chamber during purge stages. A part of the obtained samples was subjected to annealing (1350 °C) to study effects of high-temperature processing in nitrogen atmosphere, the comparisons with unprocessed samples are provided.

THE INVESTIGATION OF SURFACE TOPOGRAPHY DEVELOPMENT IN Si(001) AND Si(111) DURING SIMS DEPTH PROFILING

2001 ◽  
Vol 08 (05) ◽  
pp. 453-457 ◽  
Author(s):  
G. S. LAU ◽  
E. S. TOK ◽  
A. T. S. WEE ◽  
R. LIU ◽  
S. L. LIM
Keyword(s):  
Secondary Ion Mass Spectrometry ◽  
Incident Angle ◽  
Ion Beam ◽  
Depth Profiling ◽  
Orientation Dependence ◽  
Surface Roughening ◽  
Force Microscopy ◽  
Oxygen Ion ◽  
Atomic Force ◽  
Secondary Ion

The oxygen ion-beam induced surface roughening observed during SIMS (secondary ion mass spectrometry) depth profiling of both the Si (001) and Si (111) surfaces has been studied by atomic force microscopy (AFM) as a function of both sputtered-depth and by varying the incident angles of the primary [Formula: see text] ion beam in the range of 44°–56°. Our result shows a surface orientation dependence of surface roughening whereby the transition roughening depth as well as the sputtering rate were observed to be greater in Si (111) than in Si (001). The orientation dependence was particularly obvious when increasing the incident angle of the [Formula: see text] ion beam from 44° to 56°. In addition, prominent elongated triangular and rectangular features are observed from sputtered Si (001) and Si (111) surfaces respectively at 56° incidence. These features may be associated with the formation of {111} and {001} facets on the sputtered Si (001) and Si (111) surfaces respectively.

Morphology and development of flow-pattern defect with extended nonagitated Secco etching

1994 ◽  
Vol 52 ◽  
pp. 868-869
Author(s):  
Y. Pan
Keyword(s):  
Flow Pattern ◽  
Silicon Crystal ◽  
Gate Oxide ◽  
Crystal Growth Rate ◽  
Etch Depth ◽  
Force Microscopy ◽  
Etch Pit ◽  
Float Zone ◽  
Atomic Force ◽  
Multiple Step

The D defect, which causes the degradation of gate oxide integrities (GOI), can be revealed by Secco etching as flow pattern defect (FPD) in both float zone (FZ) and Czochralski (Cz) silicon crystal or as crystal originated particles (COP) by a multiple-step SC-1 cleaning process. By decreasing the crystal growth rate or high temperature annealing, the FPD density can be reduced, while the D defectsize increased. During the etching, the FPD surface density and etch pit size (FPD #1) increased withthe etch depth, while the wedge shaped contours do not change their positions and curvatures (FIG.l).In this paper, with atomic force microscopy (AFM), a simple model for FPD morphology by non-crystallographic preferential etching, such as Secco etching, was established.One sample wafer (FPD #2) was Secco etched with surface removed by 4 μm (FIG.2). The cross section view shows the FPD has a circular saucer pit and the wedge contours are actually the side surfaces of a terrace structure with very small slopes. Note that the scale in z direction is purposely enhanced in the AFM images. The pit dimensions are listed in TABLE 1.

Structural and Optical Properties of InAsSbBi Grown by Molecular Beam Epitaxy on Offcut GaSb Substrates

Photonics ◽  
2021 ◽  
Vol 8 (6) ◽  
pp. 215
Author(s):  
Rajeev R. Kosireddy ◽  
Stephen T. Schaefer ◽  
Marko S. Milosavljevic ◽  
Shane R. Johnson
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Optical Quality ◽  
X Ray Diffraction ◽  
Interface Quality ◽  
Force Microscopy ◽  
Atomic Force ◽  
Transmission Electron ◽  
Lateral Variations

Three InAsSbBi samples are grown by molecular beam epitaxy at 400 °C on GaSb substrates with three different offcuts: (100) on-axis, (100) offcut 1° toward [011], and (100) offcut 4° toward [011]. The samples are investigated using X-ray diffraction, Nomarski optical microscopy, atomic force microscopy, transmission electron microscopy, and photoluminescence spectroscopy. The InAsSbBi layers are 210 nm thick, coherently strained, and show no observable defects. The substrate offcut is not observed to influence the structural and interface quality of the samples. Each sample exhibits small lateral variations in the Bi mole fraction, with the largest variation observed in the on-axis growth. Bismuth rich surface droplet features are observed on all samples. The surface droplets are isotropic on the on-axis sample and elongated along the [011¯] step edges on the 1° and 4° offcut samples. No significant change in optical quality with offcut angle is observed.

Mechanical Interlocking on Leadframe Surface for Bondability of Au Wedge Bond

2016 ◽  
Vol 857 ◽  
pp. 79-82
Author(s):  
Roslina Ismail ◽  
Fuaida Harun ◽  
Azman Jalar ◽  
Shahrum Abdullah
Keyword(s):  
Optical Microscope ◽  
Bonding Process ◽  
Mechanical Interlocking ◽  
Average Roughness ◽  
Force Microscopy ◽  
Atomic Force ◽  
Surface Morphologies ◽  
Scanning Electron ◽  
Effect Of Surface

This work is a contribution towards the understanding of wire bond integrity and reliability in relation to their microstructural and mechanical properties in semiconductor packaging.The effect of surface roughness and hardness of leadframe on the bondability of Au wedge bond still requires detail analysis. Two type of leadframes namely leadframe A and leadframe B were chosen and scanning electron microscope (SEM) and optical microscope were used to inspect the surface morphology of leadframes and the quality of created Au wedge bond after wire bonding process. It was found that there were significant differences in the surface morphologies between these two leadframes. The atomic force microscopy (AFM) which was utilized to measure the average roughness, Ra of lead finger confirms that leadframe A has the highest Ra with value of 166.46 nm compared to that of leadframe B with value of 85.89 nm. While hardness value of different lead finger from the selected leadframe A and B obtained using Vicker microhardness tester are 180.9 VH and 154.2VH respectively.

How Small Is Too Small ? Understanding The Electronic Structure Of Atomic-Scale Transistors

1999 ◽  
Vol 5 (S2) ◽  
pp. 120-121
Author(s):  
D. A. Muller ◽  
T. Sorsch ◽  
S. Moccio ◽  
F. H. Baumann ◽  
K. Evans-Lutterodt ◽  
...  
Keyword(s):  
Electronic Structure ◽  
Electrical Properties ◽  
Thermal Oxidation ◽  
Electronic Devices ◽  
Local Environment ◽  
Gate Oxide ◽  
Atomic Scale ◽  
Gate Oxides ◽  
Bulk Properties ◽  
Commercial Use

The transistors planned for commercial use ten years from now in many electronic devices will have gate lengths shorter than 130 atoms, gate oxides thinner than 1.2 nm of SiO2 and clock speeds in excess of 10 GHz. It is now technologically possible to produce such transistors with gate oxides only 5 silicon atoms thick[l]. Since at least two of those 5 atoms are not in a local environment similar to either bulk Si or bulk SiO2, the properties of the interface are responsible for a significant fraction of the “bulk” properties of the gate oxide. However the physical (and especially their electrical) properties of the interfacial atoms are very different from .bulk Si or bulk SiO2. Further, roughness on an atomic scale can alter the leakage current by orders of magnitude.In our studies of such devices, we found that thermal oxidation tends to produce Si/SiO2 interfaces with 0.1-0.2 nm rms roughness.

Effect of V/III Ratio on the Properties of GaN Layers Grown by Molecular Beam Epitaxy Using NH3

1998 ◽  
Vol 512 ◽  
Author(s):  
N. Grandjean ◽  
M. Leroux ◽  
J. Massies ◽  
M. Mesrine ◽  
P. Lorenzini
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Flux Ratio ◽  
Buffer Layers ◽  
Force Microscopy ◽  
Sapphire Substrates ◽  
Atomic Force ◽  
Piezoelectric Field ◽  
Secondary Ion

ABSTRACTAmmonia as nitrogen precursor has been used to grow III-V nitrides by molecular beam epitaxy (MBE) on c-plane sapphire substrates. The efficiency of NH3 has been evaluated allowing the determination of the actual V/III flux ratio used during the GaN growth. The effects of the V/III ratio variation on the GaN layer properties have been investigated by photoluminescence (PL), Hall measurements, atomic force microscopy (AFM), and secondary ion mass spectroscopy (SIMS). It is found that a high V/III ratio leads to the best material quality. Optimized GaN thick buffer layers have been used to grow GaN/AlGaN quantum well (QW) heterostructures. Their PL spectra exhibit well resolved emission peaks for QW thicknesses varying from 3 to 15 monolayers. From the variation of the QW energies as a function of well width, a piezoelectric field of 450 kV/cm is deduced.

scholarly journals Osteoblast-Like Cell Behavior on Porous Scaffolds Based on Poly(styrene) Fibers

2014 ◽  
Vol 2014 ◽  
pp. 1-6 ◽  
Author(s):  
Andrada Serafim ◽  
Romain Mallet ◽  
Florence Pascaretti-Grizon ◽  
Izabela-Cristina Stancu ◽  
Daniel Chappard
Keyword(s):  
Interference Microscopy ◽  
Porous Scaffolds ◽  
Allogenic Bone ◽  
Force Microscopy ◽  
Atomic Force ◽  
Dry Spinning ◽  
Bone Trabeculae ◽  
Large Bone

Scaffolds of nonresorbable biomaterials can represent an interesting alternative for replacing large bone defects in some particular clinical cases with massive bone loss. Poly(styrene) microfibers were prepared by a dry spinning method. They were partially melted to provide 3D porous scaffolds. The quality of the material was assessed by Raman spectroscopy. Surface roughness was determined by atomic force microscopy and vertical interference microscopy. Saos-2 osteoblast-like cells were seeded on the surface of the fibers and left to proliferate. Cell morphology, evaluated by scanning electron microscopy, revealed that they can spread and elongate on the rough microfiber surface. Porous 3D scaffolds made of nonresorbable poly(styrene) fibers are cytocompatible biomaterials mimicking allogenic bone trabeculae and allowing the growth and development of osteoblast-like cellsin vitro.

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