Study of Cobalt Salicide Fabrication on Sub-Quarter Micron Polysilicon Lines

1996 ◽  
Vol 429 ◽  
Author(s):  
Wei-Ming Chen ◽  
Scott Pozder ◽  
Young Limb ◽  
A R Sitaram ◽  
Bob Fiordalice
Keyword(s):  
Silicon Nitride ◽  
Sheet Resistance ◽  
Leakage Current ◽  
Silicon Oxide ◽  
Metal Strip ◽  
Total Reflection ◽  
Si Substrate ◽  
X Ray ◽  
Metal Residue ◽  
Lower Sheet Resistance

AbstractComparison of anneal temperatures, sheet resistance, gate to source/drain leakage current, and implant pre-amorphization are studied for a conventional 2-step cobalt salicide process and a TiN capped cobalt salicide. The TiN capped cobalt silicide process is found to be superior to the conventional cobalt salicide process in producing lower sheet resistance and tighter sheet resistance distribution. The use of a TiN cap also suppresses Si out diffusion, which can prevent shorting between the gate and source/drain areas when pre-amorphization of Si substrate is used to enhance silicidation. The metal residue on oxide and nitride substrates after metal anneal and metal etch are compared using total reflection x-ray fluorescence. It is found that both Ti and Co residue on silicon nitride is higher than on silicon oxide after metal anneal and metal strip.

N2O Oxidation Kinetics of Ultra Thin Thermally Grown Silicon Nitride: An Angle Resolved X-Ray Photoelectron Spectroscopy Study

1999 ◽  
Vol 567 ◽  
Author(s):  
A. Y. Mao ◽  
J. Lozano ◽  
J. M. White ◽  
D. L. Kwong
Keyword(s):  
Silicon Nitride ◽  
Film Thickness ◽  
Photoelectron Spectroscopy ◽  
Oxidation Kinetics ◽  
Silicon Oxide ◽  
Spectroscopy Study ◽  
Si Substrate ◽  
X Ray ◽  
Si3n4 Layer ◽  
Kinetics Of

ABSTRACTThe oxidation kinetics of ultra thin thermally NH3-nitrided Si3N4 films in N2O ambient has been extensively studied using angle resolved x-ray photoelectron spectroscopy (ARXPS). Ultra thin (7Å) Si3N4 films formed by RTP nitridation of Si in NH3 were annealed in N2O at various temperatures (700 °C - 1000 °C) for 30 sec. ARXPS showed that Si substrate at the Si-Si3N4 interface was oxidized when annealed at 1000 °C for 30 sec, and was accompanied by the oxidation of the top Si3N4 surface. The total film thickness increases 4–5 times of that of the original Si3N4 layer. However, the oxide formed on the top Si3N4 surface is twice as thick as that formed at the Si3N4/Si interface. No interfacial oxide was found when annealing below 900°C, although the formation of the silicon oxide and oxynitride above the Si3N4 layer was still observed.

Single-mode dynamic X-ray diffraction for Si and Si nanowires on Si

2014 ◽  
Vol 47 (1) ◽  
pp. 285-290
Author(s):  
Hsin-Yi Chen ◽  
Pei-Tzi Chu ◽  
Shih-Lin Chang
Keyword(s):  
Azimuthal Angle ◽  
Single Mode ◽  
Total Reflection ◽  
Wide Angle ◽  
Si Nanowires ◽  
X Ray Diffraction ◽  
Si Substrate ◽  
X Ray ◽  
Optical Reflection ◽  
Mode Excitation

A method is reported of realizing single-mode diffraction using singly polarized X-ray wide-angle incidence and grazing-emergence diffraction from a bare Si substrate and from Si nanowires on an Si substrate. For a bare Si substrate, the surface-diffracted and specularly reflected beams of single-mode excitation are separated owing to the extremely asymmetric diffraction at grazing emergence. For Si wires on Si, single-mode diffraction is achieved by tuning the X-ray energy or the azimuthal angle under the conditions of total reflection. This finding opens up new opportunities for using crystal diffraction, in addition to optical reflection or refraction, for the design of coherent X-ray optics.

X-ray reflectivity studies of very thin films of silicon oxide and silicon oxide–silicon nitride stacked structures

2001 ◽  
Vol 280 (1-3) ◽  
pp. 228-234 ◽  
Author(s):  
S. Santucci ◽  
A.V. la Cecilia ◽  
A. DiGiacomo ◽  
R.A. Phani ◽  
L. Lozzi
Keyword(s):  
Thin Films ◽  
Silicon Nitride ◽  
Silicon Oxide ◽  
X Ray

Moisture barrier enhancement by spontaneous formation of silicon oxide interlayers in hot wire chemical vapor deposition of silicon nitride on poly(glycidyl methacrylate)

2014 ◽  
Vol 92 (7/8) ◽  
pp. 593-596 ◽  
Author(s):  
D.A. Spee ◽  
C.H.M. van der Werf ◽  
J.K. Rath ◽  
R.E.I. Schropp
Keyword(s):  
Chemical Vapor Deposition ◽  
Silicon Nitride ◽  
Vapor Deposition ◽  
Glycidyl Methacrylate ◽  
Silicon Oxide ◽  
Chemical Vapour ◽  
Chemical Vapor ◽  
Hot Wire ◽  
Moisture Barrier ◽  
X Ray

We deposited a silicon nitride (SiNx)–polymer hybrid multilayer moisture barrier in a hot wire chemical vapor deposition (HWCVD) process, entirely below 100 °C. The polymer, poly(glycidyl methacrylate) (PGMA), was deposited by initiated chemical vapour deposition and the SiNx in a dedicated HWCVD reactor. Line profile investigation of our barrier structures by cross-sectional scanning transmission electron microscopy and energy dispersive X-ray spectrometry reveals that, upon deposition of SiNx on top of our polymer layer, an intermediate layer of silicon oxide (SiOx) like material is formed. X-ray photoelectron spectroscopy measurements confirm the presence of this material and indicate the epoxy rings in the PGMA material open upon heating (to 100 °C) and exposure to atomic hydrogen and amine species in the HWCVD process. The oxygen atoms subsequently react with silicon and nitrogen containing radicals to form SiOxNy. The interlayer turns out to be highly beneficial for interlayer adhesion and this is considered to be one of the reasons for the excellent barrier properties of our multilayer.

Analysis of trace metals in thin silicon nitride films by total-reflection X-ray fluorescence

2001 ◽  
Vol 56 (11) ◽  
pp. 2321-2330 ◽  
Author(s):  
G. Vereecke ◽  
S. Arnauts ◽  
P. Van Doorne ◽  
K. Kenis ◽  
B. Onsia ◽  
...  
Keyword(s):  
Silicon Nitride ◽  
Trace Metals ◽  
Total Reflection ◽  
X Ray ◽  
Silicon Nitride Films ◽  
Thin Silicon

Investigation of SiO2 Cap for Al Implant Activation in 4H-SiC

2010 ◽  
Vol 1246 ◽  
Author(s):  
Feng Zhao ◽  
Mohammad m Islam ◽  
MVS Chandrasekhar ◽  
Tangali Sudarshan
Keyword(s):  
Surface Roughness ◽  
High Temperature ◽  
Active Region ◽  
Sheet Resistance ◽  
Leakage Current ◽  
Photoelectron Spectroscopy ◽  
Pin Diode ◽  
X Ray ◽  
P Type ◽  
Resistance Minimum

AbstractThe effect of using SiO2 capping layer during Al implant activation anneal on the performance of 4H-SiC P-i-N diodes has been investigated. Two sets of 4H-SiC pin diode samples, one with SiO2 cap and another with graphite cap, were annealed under high temperatures of 1500°C for activation after Al implantation at 650°C to form the p-type active region and the JTE region. The surface stoichiometry of annealed SiC was examined by x-ray photoelectron spectroscopy (XPS). Various material and device parameters including surface roughness, sheet resistance, minimum forward leakage current and maximum breakdown voltage have been extracted for comparison. The results show that SiO2 cap effectively protects the SiC surface during high temperature implant annealing.

Contribution of x-ray total reflection to the background intensity in EPMA

1990 ◽  
Vol 48 (2) ◽  
pp. 202-203
Author(s):  
Werner P. Rehbach ◽  
Peter Karduck
Keyword(s):  
Atomic Number ◽  
Target Material ◽  
Total Reflection ◽  
Background Intensity ◽  
X Rays ◽  
Characteristic Radiation ◽  
X Ray

In the EPMA of soft x rays anomalies in the background are found for several elements. In the literature extremely high backgrounds in the region of the OKα line are reported for C, Al, Si, Mo, and Zr. We found the same effect also for Boron (Fig. 1). For small glancing angles θ, the background measured using a LdSte crystal is significantly higher for B compared with BN and C, although the latter are of higher atomic number. It would be expected, that , characteristic radiation missing, the background IB (bremsstrahlung) is proportional Zn by variation of the atomic number of the target material. According to Kramers n has the value of unity, whereas Rao-Sahib and Wittry proposed values between 1.12 and 1.38 , depending on Z, E and Eo. In all cases IB should increase with increasing atomic number Z. The measured values are in discrepancy with the expected ones.

Analytical Electron Microscopy Study of Second-Phase Particles in 7075 and 7475 Aluminum Alloys

1985 ◽  
Vol 43 ◽  
pp. 348-349
Author(s):  
M. Raghavan ◽  
J. Y. Koo ◽  
J. W. Steeds ◽  
B. K. Park
Keyword(s):  
Aluminum Alloys ◽  
Silicon Oxide ◽  
Analytical Electron Microscopy ◽  
Microscopy Study ◽  
Electron Microscopy Study ◽  
Partial Substitution ◽  
Second Phase ◽  
X Ray ◽  
Second Phase Particles ◽  
Almost All

X-ray microanalysis and Convergent Beam Electron Diffraction (CBD) studies were conducted to characterize the second phase particles in two commercial aluminum alloys -- 7075 and 7475. The second phase particles studied were large (approximately 2-5μm) constituent phases and relatively fine ( ∼ 0.05-1μn) dispersoid particles, Figures 1A and B. Based on the crystal structure and chemical composition analyses, the constituent phases found in these alloys were identified to be Al7Cu2Fe, (Al,Cu)6(Fe,Cu), α-Al12Fe3Si, Mg2Si, amorphous silicon oxide and the modified 6Fe compounds, in decreasing order of abundance. The results of quantitative X-ray microanalysis of all the constituent phases are listed in Table I. The data show that, in almost all the phases, partial substitution of alloying elements occurred resulting in small deviations from the published stoichiometric compositions of the binary and ternary compounds.

Sign in / Sign up

Export Citation Format

Share Document