Impact of Rapid Thermal Annealing of Ti/Tin Bilayers On Subsequent Chemical Vapor Deposition Of Tungsten

1996 ◽  
Vol 427 ◽  
Author(s):  
A. Mourouxt ◽  
R. Palmans ◽  
J. Keinonen ◽  
S. -L. Zhang ◽  
K. Maex ◽  
...  
Keyword(s):  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Vapor Deposition ◽  
Considerable Increase ◽  
Chemical Vapor ◽  
Post Treatment ◽  
Total Stress ◽  
Sputter Deposited ◽  
Interfacial Oxygen ◽  
Subsequent Chemical

AbstractThe influence of rapid thermal annealing (RTA) of Ti/TiN on the stress in the subsequently deposited tungsten (W) films and on the impurity contents at the TiN-W interface was investigated for two types of Ti/TiN bilayers sputter-deposited at 300 °C and 550 °C. A post treatment of the Ti/TiN bilayers resulted in a substantially decreased stress in the W films. It also led to a considerable reduction of the fluorine contents at the TiN-W interface. Both effects were more pronounced for the W deposited on the low-temperature Ti/TiN bilayers and/or annealed in the NH3 atmosphere, than on the high-temperature Ti/TiN bilayers and/or annealed in the N2 atmosphere. Annealed in N2, the interfacial oxygen at the TiN-W interface increased slightly, which can be attributed to the presence of trace amounts of O2 in the N2 atmosphere. A slight increase in the W film resistivity was thus found for the W films deposited on the N2 annealed Ti/TiN bilayers, while the resistivity decreased somewhat for the W films deposited on the NH3 annealed Ti/TiN bilayers. After the post treatment, a large amount of nitrogen was found incorporated in the Ti layer forming TiNx (× < 0.3). However, the post treatment led to a considerable increase in the tensile stress in the Ti/TiN bilayers, and then an increase in the total stress of the whole Ti/TiN/W system. This stress increase could be controlled by using moderate anneal temperatures (e.g. < 550 °C) for the post treatment.

Silicon Recrystallization in Sipos Material Obtained by Disilane

1995 ◽  
Vol 403 ◽  
Author(s):  
J. J. Pedroviejo ◽  
B. Garrido ◽  
J. C. Ferrer ◽  
A. Cornet ◽  
E. Scheid ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Vapor Deposition ◽  
Polycrystalline Silicon ◽  
Chemical Vapor ◽  
Low Pressure ◽  
Thermal Treatments ◽  
Structural Modifications ◽  
Pressure Chemical

AbstractConventional and Rapid Thermal Annealing of Semi-Insulating Polycrystalline Silicon layers obtained by Low Pressure Chemical Vapor Deposition (LPCVD) from disilane Si2H6 have been performed in order to determine the structural modifications induced on the layers by these thermal treatments. The study of these modifications has been carried out by several analysis methods like FTIR, XPS, TEM, RAMAN and ellipsometry. The results obtained are presented, contrasted and discussed in this work.

Effects of Rapid Thermal Annealing on Si Delta-Doped GaInP Grown by Low Pressure Metalorganic Chemical Vapor Deposition

1995 ◽  
Vol 34 (Part 1, No. 12A) ◽  
pp. 6321-6325 ◽  
Author(s):  
Chien-Jen Wang ◽  
Ming-Shiann Feng ◽  
ShihHsiungChan ◽  
Janne-Wha Wu ◽  
Chun-Yen Chang ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Vapor Deposition ◽  
Metalorganic Chemical Vapor Deposition ◽  
Chemical Vapor ◽  
Low Pressure ◽  
Metalorganic Chemical

Phase Separation by Rapid Thermal Annealing in Si-Sub-Oxides Andnitrides Formed by Plasma CVD

1996 ◽  
Vol 420 ◽  
Author(s):  
A. Banerjee ◽  
G. Lucovsky
Keyword(s):  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Phase System ◽  
Plasma Cvd ◽  
Two Phase ◽  
Hydrogenated Silicon ◽  
Silicon Suboxide ◽  
Deposited Films

AbstractHydrogenated silicon suboxide and subnitride films were deposited by a remote plasma enhanced chemical-vapor deposition (RPECVD) process. Rapid thermal annealing (RTA) of these alloys eliminated all of the bonded hydrogen and formed a two phase system. The microstructure of the annealed films showed silicon crystallites (c-Si) surrounded by amorphous layers. The amorphous layers were identified as SiO2 and Si3N4 in the annealed suboxides and subnitrides, respectively. The as-deposited films showed band edge photoluminescence (PL); however, no PL was observed from the annealed films. This indicates that there was no significant suboxide or subnitride bonding in the amorphous layers at the metallurgically-sharp c-Si-SiO2 and c-Si-Si3N4 interfaces, respectively.

Using Thermal Oxidation and Rapid Thermal Annealing on Polycrystalline-SiGe for Ge Nanocrystals

2008 ◽  
Vol 1071 ◽  
Author(s):  
Chyuan-Haur Kao ◽  
C. S. Lai ◽  
M. C. Tsai ◽  
C. H. Lee ◽  
C. S. Huang ◽  
...  
Keyword(s):  
Thermal Oxidation ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Pressure Chemical ◽  
One Step ◽  
Amorphous Si ◽  
Annealing Method ◽  
Ge Nanocrystals

AbstractIn this paper, simple techniques were proposed to fabricate germanium nanocrystal capacitors by one-step thermal oxidation and/or rapid thermal annealing on polycrystalline-SiGe (poly-SiGe) deposited with a LPCVD (low pressure chemical vapor deposition) system. This thermal oxidation method can directly result in the top-control oxide layer via the oxidation of amorphous-Si film and the formation of Ge nanocrystals from the poly-SiGe film. Otherwise, the rapid thermal annealing method can be also used to form Ge nanocrystals as comparison.

Characterization of oxygen and nitrogen rapid thermal annealing processes for ultra-low-k SiCOH films

2008 ◽  
Vol 23 (3) ◽  
pp. 856-861 ◽  
Author(s):  
Sungwoo Lee ◽  
Donggeun Jung ◽  
Jaeyoung Yang ◽  
Jin-hyo Boo ◽  
Hyoungsub Kim ◽  
...  
Keyword(s):  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Treatment Temperature ◽  
Ftir Analysis ◽  
Film Properties ◽  
The Fourier Transform ◽  
Low K

Rapid thermal annealing (RTA) processing under N2 and O2 ambient is suggested and characterized in this work for improvement of SiCOH ultra-low-k (k = 2.4) film properties. Low-k film was deposited by plasma-enhanced chemical vapor deposition (PECVD) with decamethylcyclopentasiloxane and cyclohexane precursors. The PECVD films were treated by RTA processing in N2 and O2 environments at 550 °C for 5 min, and k values of 1.85 and 2.15 were achieved in N2 and O2 environments, respectively. Changes in the k value were correlated with the chemical composition of C–Hx and Si–O related groups determined from the Fourier transform infrared (FTIR) analysis. As the treatment temperature was increased from 300 to 550 °C, the signal intensities of both the CHx and Si–CH3 peaks were markedly decreased. The hardness and modulus of the film processed by RTA have been determined as 0.44 and 3.95 GPa, respectively. Hardness and modulus of RTA-treated films were correlated with D-group [O2Si–(CH3)2] and T-group [O3Si–(CH3)] fractions determined from the FTIR Si–CH3 bending peak. The hardness and modulus improvement in this work is attributed to the increase of oxygen content in (O)x–Si–(CH3)y by rearrangement.

Rapid Thermal Annealing of Amorphous Silicon Thin Films Grown by Electron Cyclotron Resonance Chemical Vapor Deposition

2010 ◽  
Vol 1245 ◽  
Author(s):  
Pei-Yi Lin ◽  
Ping-Jung Wu ◽  
I-Chen Chen
Keyword(s):  
Thin Films ◽  
Chemical Vapor Deposition ◽  
Amorphous Silicon ◽  
Grain Growth ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Vapor Deposition ◽  
Cyclotron Resonance ◽  
Electron Cyclotron Resonance ◽  
Chemical Vapor

AbstractHydrogenated amorphous silicon (a-Si:H) thin films were deposited on pre-oxidized Si wafers by electron cyclotron resonance chemical vapor deposition (ECRCVD). The rapid thermal annealing (RTA) treatments were applied to the as-grown samples in nitrogen atmosphere, and the temperature range for the RTA process is from 450 to 950 °C. The crystallization and grain growth behaviors of the annealed films were investigated by Raman spectroscopy, X-ray diffraction (XRD) and transmission electron microscopy (TEM). The onset temperature for the crystallization and grain growth is around 625 ∼ 650°C. The crystalline fraction of annealed a-Si:H films can reach ∼80%, and a grain size up to 17 nm could be obtained from the RTA treatment at 700 °C. We found that the crystallization continues when the grain growth has stopped.

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