Phase Separation by Rapid Thermal Annealing in Si-Sub-Oxides Andnitrides Formed by Plasma CVD

1996 ◽  
Vol 420 ◽  
Author(s):  
A. Banerjee ◽  
G. Lucovsky
Keyword(s):  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Phase System ◽  
Plasma Cvd ◽  
Two Phase ◽  
Hydrogenated Silicon ◽  
Silicon Suboxide ◽  
Deposited Films

AbstractHydrogenated silicon suboxide and subnitride films were deposited by a remote plasma enhanced chemical-vapor deposition (RPECVD) process. Rapid thermal annealing (RTA) of these alloys eliminated all of the bonded hydrogen and formed a two phase system. The microstructure of the annealed films showed silicon crystallites (c-Si) surrounded by amorphous layers. The amorphous layers were identified as SiO2 and Si3N4 in the annealed suboxides and subnitrides, respectively. The as-deposited films showed band edge photoluminescence (PL); however, no PL was observed from the annealed films. This indicates that there was no significant suboxide or subnitride bonding in the amorphous layers at the metallurgically-sharp c-Si-SiO2 and c-Si-Si3N4 interfaces, respectively.

Silicon Recrystallization in Sipos Material Obtained by Disilane

1995 ◽  
Vol 403 ◽  
Author(s):  
J. J. Pedroviejo ◽  
B. Garrido ◽  
J. C. Ferrer ◽  
A. Cornet ◽  
E. Scheid ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Vapor Deposition ◽  
Polycrystalline Silicon ◽  
Chemical Vapor ◽  
Low Pressure ◽  
Thermal Treatments ◽  
Structural Modifications ◽  
Pressure Chemical

AbstractConventional and Rapid Thermal Annealing of Semi-Insulating Polycrystalline Silicon layers obtained by Low Pressure Chemical Vapor Deposition (LPCVD) from disilane Si2H6 have been performed in order to determine the structural modifications induced on the layers by these thermal treatments. The study of these modifications has been carried out by several analysis methods like FTIR, XPS, TEM, RAMAN and ellipsometry. The results obtained are presented, contrasted and discussed in this work.

Effects of Rapid Thermal Annealing on Si Delta-Doped GaInP Grown by Low Pressure Metalorganic Chemical Vapor Deposition

1995 ◽  
Vol 34 (Part 1, No. 12A) ◽  
pp. 6321-6325 ◽  
Author(s):  
Chien-Jen Wang ◽  
Ming-Shiann Feng ◽  
ShihHsiungChan ◽  
Janne-Wha Wu ◽  
Chun-Yen Chang ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Vapor Deposition ◽  
Metalorganic Chemical Vapor Deposition ◽  
Chemical Vapor ◽  
Low Pressure ◽  
Metalorganic Chemical

Using Thermal Oxidation and Rapid Thermal Annealing on Polycrystalline-SiGe for Ge Nanocrystals

2008 ◽  
Vol 1071 ◽  
Author(s):  
Chyuan-Haur Kao ◽  
C. S. Lai ◽  
M. C. Tsai ◽  
C. H. Lee ◽  
C. S. Huang ◽  
...  
Keyword(s):  
Thermal Oxidation ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Pressure Chemical ◽  
One Step ◽  
Amorphous Si ◽  
Annealing Method ◽  
Ge Nanocrystals

AbstractIn this paper, simple techniques were proposed to fabricate germanium nanocrystal capacitors by one-step thermal oxidation and/or rapid thermal annealing on polycrystalline-SiGe (poly-SiGe) deposited with a LPCVD (low pressure chemical vapor deposition) system. This thermal oxidation method can directly result in the top-control oxide layer via the oxidation of amorphous-Si film and the formation of Ge nanocrystals from the poly-SiGe film. Otherwise, the rapid thermal annealing method can be also used to form Ge nanocrystals as comparison.

Characterization of oxygen and nitrogen rapid thermal annealing processes for ultra-low-k SiCOH films

2008 ◽  
Vol 23 (3) ◽  
pp. 856-861 ◽  
Author(s):  
Sungwoo Lee ◽  
Donggeun Jung ◽  
Jaeyoung Yang ◽  
Jin-hyo Boo ◽  
Hyoungsub Kim ◽  
...  
Keyword(s):  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Treatment Temperature ◽  
Ftir Analysis ◽  
Film Properties ◽  
The Fourier Transform ◽  
Low K

Rapid thermal annealing (RTA) processing under N2 and O2 ambient is suggested and characterized in this work for improvement of SiCOH ultra-low-k (k = 2.4) film properties. Low-k film was deposited by plasma-enhanced chemical vapor deposition (PECVD) with decamethylcyclopentasiloxane and cyclohexane precursors. The PECVD films were treated by RTA processing in N2 and O2 environments at 550 °C for 5 min, and k values of 1.85 and 2.15 were achieved in N2 and O2 environments, respectively. Changes in the k value were correlated with the chemical composition of C–Hx and Si–O related groups determined from the Fourier transform infrared (FTIR) analysis. As the treatment temperature was increased from 300 to 550 °C, the signal intensities of both the CHx and Si–CH3 peaks were markedly decreased. The hardness and modulus of the film processed by RTA have been determined as 0.44 and 3.95 GPa, respectively. Hardness and modulus of RTA-treated films were correlated with D-group [O2Si–(CH3)2] and T-group [O3Si–(CH3)] fractions determined from the FTIR Si–CH3 bending peak. The hardness and modulus improvement in this work is attributed to the increase of oxygen content in (O)x–Si–(CH3)y by rearrangement.

Impact of Rapid Thermal Annealing of Ti/Tin Bilayers On Subsequent Chemical Vapor Deposition Of Tungsten

1996 ◽  
Vol 427 ◽  
Author(s):  
A. Mourouxt ◽  
R. Palmans ◽  
J. Keinonen ◽  
S. -L. Zhang ◽  
K. Maex ◽  
...  
Keyword(s):  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Vapor Deposition ◽  
Considerable Increase ◽  
Chemical Vapor ◽  
Post Treatment ◽  
Total Stress ◽  
Sputter Deposited ◽  
Interfacial Oxygen ◽  
Subsequent Chemical

AbstractThe influence of rapid thermal annealing (RTA) of Ti/TiN on the stress in the subsequently deposited tungsten (W) films and on the impurity contents at the TiN-W interface was investigated for two types of Ti/TiN bilayers sputter-deposited at 300 °C and 550 °C. A post treatment of the Ti/TiN bilayers resulted in a substantially decreased stress in the W films. It also led to a considerable reduction of the fluorine contents at the TiN-W interface. Both effects were more pronounced for the W deposited on the low-temperature Ti/TiN bilayers and/or annealed in the NH3 atmosphere, than on the high-temperature Ti/TiN bilayers and/or annealed in the N2 atmosphere. Annealed in N2, the interfacial oxygen at the TiN-W interface increased slightly, which can be attributed to the presence of trace amounts of O2 in the N2 atmosphere. A slight increase in the W film resistivity was thus found for the W films deposited on the N2 annealed Ti/TiN bilayers, while the resistivity decreased somewhat for the W films deposited on the NH3 annealed Ti/TiN bilayers. After the post treatment, a large amount of nitrogen was found incorporated in the Ti layer forming TiNx (× < 0.3). However, the post treatment led to a considerable increase in the tensile stress in the Ti/TiN bilayers, and then an increase in the total stress of the whole Ti/TiN/W system. This stress increase could be controlled by using moderate anneal temperatures (e.g. < 550 °C) for the post treatment.

Effect of Rapid Thermal Annealing Time on the Structural and Optical Properties of Layered Structured SiOx/Au/SiOx Film

2012 ◽  
Vol 501 ◽  
pp. 221-225 ◽  
Author(s):  
Rosli Najwa ◽  
Kee Wah Chan ◽  
Putri Jamal Ilyani ◽  
Abdul Rahman Saadah ◽  
Boon Tong Goh ◽  
...  
Keyword(s):  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Annealing Time ◽  
Depth Profiling ◽  
Chemical Vapor ◽  
Spherical Shape ◽  
Morphological Properties ◽  
Time Duration ◽  
Silicon Suboxide ◽  
Evaporation Technique

In this work, layer structured silicon suboxide/gold/silicon suboxide (SiOx/Au/SiOx) films were prepared by using plasma enhanced chemical vapor deposition assisted with hot wire evaporation technique. Post rapid thermal annealing (RTA) process was done on the as-prepared films for 100, 500 and 700s at constant temperature of 800oC in vacuum ambient. Effects of RTA process on the structural and morphological properties of films were studied using FE-SEM, depth profiling and XRD measurement. While, surface plasmon resonance (SPR) phenomenon exhibited by Au particles was investigated via the optical absorption spectra. SPR signals can be exhibited by sample annealed for longer time duration. Individual Au islands tend to form the spherical shape as a whole. Diffusion of Au particles towards the surface of SiOx film is temperature dependent and crystallite size of Au enlarges with the rapid thermal annealing time.

scholarly journals Conducting two-phase silicon oxide layers for thin-film silicon solar cells

2008 ◽  
Vol 1123 ◽  
Author(s):  
Peter Buehlmann ◽  
Julien Bailat ◽  
Andrea Feltrin ◽  
Christophe Ballif
Keyword(s):  
Refractive Index ◽  
Silicon Oxide ◽  
Chemical Vapor ◽  
Very High Frequency ◽  
Two Phase ◽  
Hydrogenated Silicon ◽  
High Frequency Plasma ◽  
Frequency Plasma ◽  
Silicon Suboxide ◽  
Transverse Conductivity

AbstractWe present optical properties and microstructure analyses of hydrogenated silicon suboxide layers containing silicon nanocrystals (nc-SiOx:H). This material is especially adapted for the use as intermediate reflecting layer (IRL) in micromorph silicon tandem cells due to its low refractive index and relatively high transverse conductivity. The nc-SiOx:H is deposited by very high frequency plasma enhanced chemical vapor deposition from a SiH4/CO2/H2/PH3 gas mixture. We show the influence of H2/SiH4 and CO2/SiH4 gas ratios on the layer properties as well as on the micromorph cell when the nc-SiOx:H is used as IRL. The lowest refractive index achieved in a working micromoph cell is 1.71 and the highest initial micromoph efficiency with such an IRL is 13.3 %.

Sign in / Sign up

Export Citation Format

Share Document