0.1μm Technology and Beol

1996 ◽  
Vol 427 ◽  
Author(s):  
Tak H. Ning

AbstractIt is clear that, at the device level, CMOS is scaleable to 0.1 μm and beyond, provided that the power supply voltage and the device physical dimensions are reduced in some coordinated manner. Contacting these devices and connecting them into circuits, and wiring the circuits at the chip level will become ever more challenging. Furthermore, the integration level of 0.1-μm technology is such that the chip will be the system or at least the core of the system. Thus, the BEOL will not be just for interconnecting the circuits on the chip, but provide the interconnect functions that are presently on the package and/or the board. To this end, copper and low-ε inter-level dielectric, on-chip decoupling capacitor, as well as wire-level hierarchy, will be needed.

2011 ◽  
Vol E94-C (6) ◽  
pp. 1072-1075
Author(s):  
Tadashi YASUFUKU ◽  
Yasumi NAKAMURA ◽  
Zhe PIAO ◽  
Makoto TAKAMIYA ◽  
Takayasu SAKURAI

2016 ◽  
Vol E99.C (10) ◽  
pp. 1219-1225
Author(s):  
Masahiro ISHIDA ◽  
Toru NAKURA ◽  
Takashi KUSAKA ◽  
Satoshi KOMATSU ◽  
Kunihiro ASADA

1993 ◽  
Vol 29 (15) ◽  
pp. 1324 ◽  
Author(s):  
L.E. Larson ◽  
M.M. Matloubian ◽  
J.J. Brown ◽  
A.S. Brown ◽  
M. Thompson ◽  
...  

2020 ◽  
Vol 67 (5) ◽  
pp. 811-817
Author(s):  
G. Torrens ◽  
A. Alheyasat ◽  
B. Alorda ◽  
S. Barcelo ◽  
J. Segura ◽  
...  

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