Photovoltaic Effect in a-Si/c-Si Heterostructure Prepared by RF Magnetron Sputtering Technique

1996 ◽  
Vol 426 ◽  
Author(s):  
B. G. Budaguan ◽  
A. A. Sherchenkov ◽  
A. A. Aivazov
Keyword(s):  
Photovoltaic Effect ◽  
Energy Band Diagram ◽  
Rf Magnetron Sputtering ◽  
Band Diagram ◽  
Ir Detector ◽  
Interfacial Condition ◽  
Annealing Conditions ◽  
Type C ◽  
Amorphous Si ◽  
P Type

AbstractPhotosensitivity spectral dependencies of the a-Si(n-type)/c-Si(p-type) heterostructure for the different reverse biases, Vb, amorphous Si film thickness, substrate predeposition temperatures, Ts, and annealing conditions, Ta, were investigated in the wavelengths range of 500–1200 nm It was found that the position of the relative photosensitivity maximum depends on Ts, and Vb and can be varied in the wavelengths range of 840–1080 nm. The energy band diagram of the heterostructure was analyzed to explain the observed results. It was shown that the photosensitivity properties of the a-Si/c-Si heterostructure depend on the interfacial condition. The perspective application of the structures investigated is IR detector fabrication.

scholarly journals Energy band diagram of In2O3/ Si heterojunction

2011 ◽  
Vol 8 (2) ◽  
pp. 581-587
Author(s):  
Baghdad Science Journal
Keyword(s):  
Energy Band ◽  
Energy Band Diagram ◽  
Band Diagram ◽  
X Ray Diffraction ◽  
Flash Evaporation ◽  
Tunneling Diode ◽  
Conductivity Increase ◽  
Hall Effect Measurements ◽  
Evaporation Technique ◽  
P Type

Crystalline In2O3 Thin films have been prepared by flash evaporation. We have studied the crystal structure of as deposited at 303K and annealed at 523K using X-ray diffraction. The Hall Effect measurements confirmed that electrons were predominant charges in the conduction process (i.e n-type).It is found that the absorption coefficient of the prepared films decreases with increasing Ta. The d.c conductivity study showed that the conductivity increase with increasing Ta , whereas the activation energy decreases with increasing Ta. Also we study the barrier tunneling diode for In2O3/Si heterostructure grown by Flash evaporation technique. (capacitance-voltage C-V) spectroscopy measurements were performed at 303 K and at the annealing temperature 523K. The built in voltage has been determined and it depends strongly on the annealing process of the heterojunction. From all above measurements we assumed an energy band diagram for In2O3 /Si(P-type) heterojunction.

Photovoltaic and Electroluminescent Properties of Stainetched Porous Silicon Based Heterojunctions

1995 ◽  
Vol 405 ◽  
Author(s):  
D. Dimova-Malinovska ◽  
M. Tzolov ◽  
M. Kamenova ◽  
N. Tzenov ◽  
M. Sendova-Vassileva ◽  
...  
Keyword(s):  
Light Emission ◽  
Photovoltaic Effect ◽  
Luminescent Properties ◽  
Porous Si ◽  
Photoelectric Properties ◽  
Type C ◽  
P Type ◽  
Silicon Based ◽  
Electrical Bias ◽  
Stain Etching

AbstractThe results of photoelectric properties and electroluminescent studies of structures ZnO/porous Si/p-type c-Si/Al and ZnO/porous Si/p-n c-Si junction/Al are presented. Porous Si is prepared by stain etching of c-Si covered with thin Al film. The transparent ZnO film allows light emission through the top surface of the device under forward electrical bias. Photocurrent is observed under reverse bias and a photovoltaic effect is measured on the p-n junction PS device. The model based on injection of minority carriers through a narrow energy barrier into the porous Si and the presence of the barrier at the interface porous Si/c-Si is suggested for describing the electrical, photoelectric and luminescent properties of the structures.

Properties of Sputter Deposited ZnO Films Co-doped with Lithium and Phosphorus

2013 ◽  
Vol 1494 ◽  
pp. 77-82
Author(s):  
T. N. Oder ◽  
A. Smith ◽  
M. Freeman ◽  
M. McMaster ◽  
B. Cai ◽  
...  
Keyword(s):  
Rf Magnetron Sputtering ◽  
Zno Films ◽  
X Ray Diffraction ◽  
X Ray ◽  
Sapphire Substrates ◽  
Hall Effect Measurements ◽  
Sputter Deposited ◽  
P Type ◽  
Post Deposition ◽  
Co Doped

ABSTRACTThin films of ZnO co-doped with lithium and phosphorus were deposited on sapphire substrates by RF magnetron sputtering. The films were sequentially deposited from ultra pure ZnO and Li3PO4 solid targets. Post deposition annealing was carried using a rapid thermal processor in O2 and N2 at temperatures ranging from 500 °C to 1000 °C for 3 min. Analyses performed using low temperature photoluminescence spectroscopy measurements reveal luminescence peaks at 3.359, 3.306, 3.245 eV for the co-doped samples. The x-ray diffraction 2θ-scans for all the films showed a single peak at about 34.4° with full width at half maximum of about 0.17°. Hall Effect measurements revealed conductivities that change from p-type to n-type over time.

Single nanoparticle of organic p-type and n-type hybrid materials: nanoscale phase separation and photovoltaic effect

2012 ◽  
Vol 22 (6) ◽  
pp. 2485-2490 ◽  
Author(s):  
Yong-baek Lee ◽  
Seok Ho Lee ◽  
Kihyun Kim ◽  
Jin Woo Lee ◽  
Kyung-Yeon Han ◽  
...  
Keyword(s):  
Phase Separation ◽  
Hybrid Materials ◽  
Photovoltaic Effect ◽  
Organic P ◽  
Nanoscale Phase Separation ◽  
Single Nanoparticle ◽  
P Type

Infrared Oscillators in Conventional Carbon Nanotube FET Technology

2015 ◽  
Vol 24 (04) ◽  
pp. 1550053
Author(s):  
Lobna I'msaddak ◽  
Dalenda Ben Issa ◽  
Abdennaceur Kachouri ◽  
Mounir Samet ◽  
Hekmet Samet
Keyword(s):  
Power Consumption ◽  
Response Time ◽  
Oscillation Frequency ◽  
Ring Oscillator ◽  
Propagation Time ◽  
Type C ◽  
P Type ◽  
Lc Tank ◽  
The Impact ◽  
Carbon Nanotube Fet

This paper presents the design of C-CNTFET oscillator's arrays for infrared 'IR' technology. These arrays are contained by both of the LC-tank and the voltage control 'coupled N- and P-type C-CNTFET LC-tank' oscillators. In this paper, the analysis of the impact of CNT diameter variations and the nonlinear capacitances (C GD and C GS ) were introduced, especially on propagation time, oscillation frequency and power consumption. The C-CNTFET inverter, ring oscillator, LC-tank and coupled N- and P-type C-CNTFET LC-tank oscillator structures were designed and their speeding and performances have been investigated with the proposed n-type of C-CNTFET model supplied by a 0.5 V power voltage. Simulation results show that the n- and p-types LC-tank oscillator circuit designs achieved an approximately equal oscillation frequency, response time and power consumption. Whereas the coupled N- and P-type C-CNTFET LC-tank oscillator has the lowest power consumption equal to 0.13 μW, the highest oscillation frequency (10.08 THz) and the fastest response time (1.81 ps).

Pulsed DC Bias Effects on p-Type Semiconductor SrCu2O2 Film Deposited by RF Magnetron Sputtering

2013 ◽  
Vol 13 (5) ◽  
pp. 3341-3345
Author(s):  
Hye-Won Seok ◽  
Sei-Ki Kim ◽  
Hyun-Seok Lee ◽  
Mi-Jae Lee ◽  
Byeong-Kwon Ju
Keyword(s):  
Magnetron Sputtering ◽  
Rf Magnetron Sputtering ◽  
Pulsed Dc ◽  
Type Semiconductor ◽  
Dc Bias ◽  
P Type
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